Vishay Siliconix IRF9520L

Overview

IRF9520L from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in TO-220AB package, rated for -100 V V_DS, 0.60 Ω R_DS(on) at V_GS = -10 V, and -6.8 A continuous drain current at T_C = 25 °C. It delivers rugged repetitive avalanche capability (6.0 mJ), fast switching (t_r = 29 ns), and operates up to +175 °C junction temperature - used in DC-DC converter high-side switches and linear power supply pass elements.

For engineers reviewing the IRF9520L datasheet, IRF9520L pinout, IRF9520L application, or IRF9520L equivalent, this page provides verified electrical parameters, thermal resistance values (R_thJC = 2.5 °C/W), gate charge breakdown (Q_g = 18 nC), body diode recovery metrics (t_rr = 98–200 ns), and validated alternative parts for high-voltage P-channel switching designs.

Technical Context

This device implements a third-generation silicon process optimized for low R_DS(on) and dynamic dv/dt immunity (-5.5 V/ns). Its P-channel topology enables high-side switching without level-shifting circuitry, and its 175 °C rated junction supports operation in thermally constrained industrial enclosures.

The TO-220AB package provides low R_thJC (2.5 °C/W) and mechanical robustness for bolt-down heatsinking. Internal source/drain inductances (L_S = 7.5 nH, L_D = 4.5 nH) are characterized per JEDEC standards and directly impact switching waveform fidelity in hard-switched topologies.

Key Specifications

Pinout & Package

IRF9520L uses the industry-standard TO-220AB package with isolated tab (drain-connected), featuring 3 leads in vertical inline configuration and 1.6 mm lead-to-case clearance per JEDEC TO-220AB outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage switching applications.

Compared with IRF9520L, IRF9530 offers lower conduction loss but demands more gate drive energy, while IXTP10P10P trades higher R_DS(on) for inherent isolation - making IRF9520L the balanced choice for cost-sensitive, thermally managed 100 V P-channel switching where TO-220AB mounting is acceptable.

Availability

IRF9520L is available at Aetrix Electronics and suitable for industrial power supplies, DC motor controllers, LED drivers, and hot-swap modules requiring stable component supply with long-term lifecycle support.

Supply support for IRF9520L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and thermal performance.

The IRF9520L belongs to Vishay's third-generation power MOSFET family engineered for high-voltage P-channel switching in industrial and automotive-qualified environments, prioritizing avalanche robustness and high-temperature operation.

FAQ

What is the maximum continuous drain current for IRF9520L at 100 °C case temperature?

The IRF9520L supports -4.8 A continuous drain current at T_C = 100 °C, derived from its 0.40 W/°C linear derating factor applied to the 60 W maximum power dissipation at 25 °C. This value is confirmed in the Absolute Maximum Ratings table of Vishay document 91074 and reflects real-world thermal limits when mounted on a standard heatsink with thermal interface material.

Does IRF9520L have an integrated body diode, and what are its key parameters?

Yes, the IRF9520L integrates a p-n junction body diode with -6.3 V forward voltage (V_SD) at -6.8 A and 25 °C, reverse recovery time (t_rr) of 98–200 ns, and reverse recovery charge (Q_rr) of 0.33–0.66 μC. These values are measured per the test conditions specified in the Vishay datasheet (T_J = 25 °C, I_F = -6.8 A, dI/dt = 100 A/μs) and define its suitability for freewheeling in inductive loads.

Is IRF9520L RoHS-compliant, and what are its lead-free ordering options?

The IRF9520L is available in RoHS-compliant versions: IRF9520PbF (lead-free) and IRF9520PbF-BE3 (lead-free and halogen-free). Both variants retain identical electrical and thermal specifications as the base part and are documented in the Ordering Information section of Vishay document 91074. Compliance status is verified per Vishay's material categorization standard (doc?99912).

What is the gate-source threshold voltage range for IRF9520L, and how does it affect drive design?

The IRF9520L has a gate-source threshold voltage (V_GS(th)) range of -2.0 V to -4.0 V at I_D = -250 μA, meaning full enhancement requires V_GS ≤ -4.0 V. This wide threshold window necessitates gate drive designs that ensure sufficient negative swing - typically -10 V - to guarantee low R_DS(on) across temperature and unit variation, as confirmed in the Static Specifications table.

Can IRF9520L be paralleled with other units, and what design considerations apply?

Yes, the IRF9520L is explicitly designed for ease of paralleling, as noted in its Features list. Key requirements include matched gate resistors (to balance turn-on timing), symmetrical PCB layout (to minimize source inductance imbalance), and individual gate drive paths. The device's positive R_DS(on) temperature coefficient ensures current sharing stability across temperature gradients, per Vishay's third-generation MOSFET design methodology.