Vishay Siliconix IRFBF30L

Overview

IRFBF30L from Vishay Siliconix is a 900 V, 3.6 A N-channel power MOSFET in TO-220AB package, featuring 3.7 Ω R_DS(on) at V_GS = 10 V, 78 nC total gate charge, and repetitive avalanche rating up to 3.6 A - designed for high-voltage flyback and snubberless AC-DC power supplies.

For engineers reviewing the IRFBF30L datasheet, IRFBF30L pinout, IRFBF30L application, or IRFBF30L equivalent, this page delivers verified electrical parameters, thermal resistance data (R_thJC = 1.0 °C/W), diode recovery metrics (t_rr = 430–650 ns), and real-world switching behavior under unclamped inductive load conditions.

Technical Context

This third-generation planar MOSFET uses ruggedized silicon design with dynamic dV/dt rating of 1.5 V/ns and peak diode recovery dV/dt capability - enabling reliable operation in high dv/dt environments such as offline SMPS and motor drive snubbers. Its low gate charge (Q_g = 78 nC) and moderate input capacitance (C_iss = 1200 pF) support fast, efficient switching at 450 V bus voltage with 14 ns turn-on delay and 30 ns fall time.

The device integrates a robust body diode rated for 3.6 A continuous source-drain current and 14 A pulsed current, with reverse recovery charge Q_rr = 1.4–2.1 μC and t_rr = 430–650 ns at 100 A/μs dI/dt - critical for minimizing switching losses in discontinuous conduction mode (DCM) converters.

Key Specifications

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole mounting, 1.0 mm lead pitch, and 1.6 mm lead length from case. Thermal resistance from junction to case is 1.0 °C/W, optimized for mechanical screw-down heatsinking using M3 or 6-32 hardware (1.1 N·m torque).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP9NK90Z and IXTH3N90L, the IRFBF30L offers balanced trade-offs: standard TO-220AB mechanical fit, 3.6 A current, 3.7 Ω on-resistance, and full avalanche ruggedness - making it optimal for cost-sensitive, space-constrained 15–30 W offline power stages where thermal and layout constraints preclude TO-247 or insulated-tab alternatives.

Availability

IRFBF30L is available at Aetrix Electronics and suitable for offline AC-DC adapters, flyback power supplies, and snubberless motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRFBF30L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFBF30L belongs to Vishay's third-generation high-voltage planar MOSFET product line, engineered specifically for demanding offline power conversion applications where avalanche capability, dV/dt immunity, and thermal robustness are essential.

FAQ

What is the maximum continuous drain current for IRFBF30L at 100 °C case temperature?

The IRFBF30L supports 2.3 A continuous drain current at T_C = 100 °C, per its linear derating curve from 3.6 A at 25 °C. This value reflects thermal limits imposed by R_thJC = 1.0 °C/W and maximum junction temperature of 150 °C. Designers must verify heatsink performance to maintain T_C ≤ 100 °C under full-load conditions in the final IRFBF30L application.

Does IRFBF30L have an isolated drain tab in the TO-220AB package?

Yes, the IRFBF30L uses a TO-220AB package with electrically isolated drain tab - confirmed in Vishay's official datasheet (S21-0883-Rev. C). This allows direct mounting to a common heatsink without insulating hardware, simplifying thermal design in compact AC-DC power supplies where the drain is referenced to high-voltage primary ground.

What is the body diode reverse recovery charge (Q_rr) specification for IRFBF30L?

The IRFBF30L has a body diode reverse recovery charge of 1.4–2.1 μC, measured at T_J = 25 °C, I_F = 3.6 A, and dI/dt = 100 A/μs. This Q_rr range directly impacts turn-on loss in synchronous rectification and influences EMI filtering requirements in DCM flyback designs using the IRFBF30L as the main switch.

Can IRFBF30L be used in avalanche mode for energy clamping without external components?

Yes, the IRFBF30L is explicitly rated for repetitive avalanche operation (I_AR = 3.6 A, E_AR = 13 mJ) and single-pulse avalanche (E_AS = 250 mJ). It is validated for unclamped inductive switching per Figure 12 in the datasheet, enabling snubberless flyback reset and inductive load switching in motor control - provided peak junction temperature remains within 150 °C during IRFBF30L avalanche events.

What gate drive voltage is required to fully enhance IRFBF30L?

The IRFBF30L achieves specified R_DS(on) = 3.7 Ω at V_GS = 10 V, with gate threshold voltage V_GS(th) ranging from 2.0 V to 4.0 V. A minimum 10 V gate drive is recommended for reliable saturation and minimal conduction loss; operation below 8 V risks incomplete turn-on and elevated R_DS(on), especially at elevated temperatures in the final IRFBF30L implementation.