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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF9610STRL

Name: IRF9610STRL
Brand: Vishay Siliconix
SKU: IRF9610STRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF9610STRL

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF9610STRL.pdf

Description:: MOSFET P-CH 200V 1.8A D2PAK

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Product details

Overview

IRF9610STRL from Vishay Siliconix is a P-channel enhancement-mode power MOSFET in D2PAK (TO-263) surface-mount package, rated for -200 V drain-source voltage, 3 Ω on-resistance at V_GS = -10 V, and -1.8 A continuous drain current at T_C = 25 °C. It delivers fast switching with 8 ns turn-on delay and supports high-voltage DC-DC converters and industrial motor control.

For engineers reviewing the IRF9610STRL datasheet, IRF9610STRL pinout, IRF9610STRL application, or IRF9610STRL equivalent, this page provides verified electrical parameters, thermal derating curves, body diode recovery characteristics, gate charge profile, and real-world design implications for high-side switching in ruggedized power systems.

Technical Context

This MOSFET employs third-generation silicon process technology optimized for low R_DS(on) and robust dV/dt immunity. Its P-channel architecture enables high-side switching without level-shifting circuitry, and its dynamic dV/dt rating of -5 V/ns ensures reliable operation under fast transient conditions.

The device integrates a monolithic body diode with 240–360 ns reverse recovery time and 1.7–2.6 μC Q_rr, supporting synchronous rectification and clamped inductive load handling. Thermal resistance from junction-to-case is 6.4 °C/W, enabling 20 W power dissipation at T_C = 25 °C with appropriate heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-200 V - Supports high-voltage bus designs up to 200 V DC without breakdown risk.
R_DS(on)	3 Ω @ V_GS = -10 V - Enables <1.5 W conduction loss at -1.8 A, critical for thermally constrained PCB layouts.
Q_g	11 nC - Determines gate drive energy requirement; compatible with standard logic-level drivers delivering ≥10 mA peak.
I_D (cont.)	-1.8 A @ T_C = 25 °C - Defines maximum steady-state current before thermal derating begins.
T_J Range	-55 to +150 °C - Allows operation in automotive under-hood and industrial ambient environments.
dV/dt Rating	-5 V/ns - Confirmed immunity to parasitic turn-on during fast voltage transients in half-bridge configurations.
Body Diode V_SD	-5.8 V @ I_S = -1.8 A - Impacts forward conduction loss during freewheeling in buck or flyback topologies.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain tab for thermal and electrical connection; 3-terminal configuration (Drain, Gate, Source); lead (Pb)-free and halogen-free per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-current output terminal	Electrically and thermally connected to PCB copper pour; requires minimum 0.635 mm (16.129 mil) pad per Vishay recommended layout.
Gate	Control input	High-impedance MOS gate requiring ≤±100 nA leakage; sensitive to ESD; must be driven with clean, low-inductance path.
Source	Reference node for gate drive and current return	Common connection point for load return path and gate driver ground; critical for stable switching waveform integrity.

Key Features

Feature	Design Value
P-channel topology	Enables high-side switch implementation without bootstrap or isolated gate drive circuitry.
Dynamic dV/dt rating	Rated -5 V/ns - prevents false triggering during rapid voltage transitions in bridge circuits.
Fast switching performance	8 ns turn-on delay + 15 ns rise time - reduces switching losses in PWM frequencies up to 500 kHz.
Low R_DS(on) × Q_g figure-of-merit	3 Ω × 11 nC = 33 Ω·nC - balances conduction and switching loss trade-offs in medium-frequency SMPS.
Robust body diode	240–360 ns t_rr, 1.7–2.6 μC Q_rr - supports reliable operation in discontinuous conduction mode (DCM) flyback and buck converters.

Applications

Industrial Motor Control	High-Voltage DC-DC Converters
Use Scenario: Controlling direction and braking in 24–48 V brushed DC motors used in factory automation actuators. IC Role / Device Role / Timing Role: High-side P-channel switch managing motor supply rail connection and regenerative braking via body diode conduction. Use Value: Eliminates need for high-side N-channel driver ICs; -200 V rating accommodates back-EMF spikes up to 150 V.	Use Scenario: Primary-side high-voltage switch in isolated 48 V to 12 V offline flyback converters for telecom power supplies. IC Role / Device Role / Timing Role: Main power switch operating at 100–200 kHz with clamped inductive turn-off stress. Use Value: -5 V/ns dV/dt rating prevents spurious turn-on during transformer leakage spike events.
Uninterruptible Power Supplies (UPS)	LED Driver Circuits
Use Scenario: Battery disconnect and reverse polarity protection in 24 V/48 V UPS battery management modules. IC Role / Device Role / Timing Role: Reverse-blocking switch placed between battery and inverter input to prevent backfeed during AC mains failure. Use Value: -200 V V_DS margin ensures safe operation during 150 V surge events on battery terminals.	Use Scenario: Constant-current dimming switch in high-brightness LED arrays for street lighting using buck-boost topology. IC Role / Device Role / Timing Role: Synchronous rectifier and current regulation element in high-side configured LED current sink. Use Value: Low 3 Ω R_DS(on) minimizes thermal rise in sealed outdoor enclosures where heatsinking is limited.

Industrial Motor Control

High-Voltage DC-DC Converters

Use Scenario: Controlling direction and braking in 24–48 V brushed DC motors used in factory automation actuators.

IC Role / Device Role / Timing Role: High-side P-channel switch managing motor supply rail connection and regenerative braking via body diode conduction.

Use Value: Eliminates need for high-side N-channel driver ICs; -200 V rating accommodates back-EMF spikes up to 150 V.

Use Scenario: Primary-side high-voltage switch in isolated 48 V to 12 V offline flyback converters for telecom power supplies.

IC Role / Device Role / Timing Role: Main power switch operating at 100–200 kHz with clamped inductive turn-off stress.

Use Value: -5 V/ns dV/dt rating prevents spurious turn-on during transformer leakage spike events.

Uninterruptible Power Supplies (UPS)

LED Driver Circuits

Use Scenario: Battery disconnect and reverse polarity protection in 24 V/48 V UPS battery management modules.

IC Role / Device Role / Timing Role: Reverse-blocking switch placed between battery and inverter input to prevent backfeed during AC mains failure.

Use Value: -200 V V_DS margin ensures safe operation during 150 V surge events on battery terminals.

Use Scenario: Constant-current dimming switch in high-brightness LED arrays for street lighting using buck-boost topology.

IC Role / Device Role / Timing Role: Synchronous rectifier and current regulation element in high-side configured LED current sink.

Use Value: Low 3 Ω R_DS(on) minimizes thermal rise in sealed outdoor enclosures where heatsinking is limited.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHF9610STRL-GE3	Same die, identical R_DS(on), Q_g, and V_DS; RoHS-compliant with matte tin plating vs. IRF9610STRL's Pb-free but non-RoHS-compliant terminations.	Preferred for new designs targeting full RoHS compliance; same thermal and electrical behavior in PCB mount.	Select SiHF9610STRL-GE3 when environmental compliance is mandatory and no legacy Pb-based assembly process is used.
IRF9540NPbF	Higher R_DS(on) (0.2 Ω vs. 3 Ω), lower V_DS (-100 V), larger D2PAK footprint; not drop-in due to different voltage and on-resistance specs.	Better suited for lower-voltage, higher-current applications like 12 V automotive loads; unsuitable for 200 V bus isolation.	Choose IRF9540NPbF only if system voltage is ≤100 V and higher current capacity (>4 A) is required; not a functional substitute for IRF9610STRL.

Compared with IRF9610STRL, SiHF9610STRL-GE3 offers identical electrical performance with certified RoHS compliance, while IRF9540NPbF trades voltage rating for lower on-resistance-making it incompatible for high-voltage isolation but viable for cost-sensitive 100 V applications.

Availability

IRF9610STRL is available at Aetrix Electronics and suitable for industrial motor control, high-voltage DC-DC converters, uninterruptible power supplies (UPS), and LED driver circuits requiring stable component supply across extended production lifecycles.

Supply support for IRF9610STRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on reliability, ruggedness, and high-voltage capability.

The IRF9610STRL belongs to Vishay's third-generation high-voltage P-channel MOSFET product line, engineered specifically for high-side switching in industrial power conversion, motor drives, and battery protection systems demanding -200 V blocking and robust dV/dt immunity.

FAQ

What is the maximum continuous drain current rating for IRF9610STRL at 100 °C case temperature?

The IRF9610STRL has a maximum continuous drain current of -1 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from -1.8 A at 25 °C, with a linear derating factor of 0.16 W/°C applied to the 20 W maximum power dissipation limit. Engineers must verify heatsink design to maintain T_C ≤ 100 °C under full load.

Does IRF9610STRL support logic-level gate drive?

No, IRF9610STRL is not a logic-level MOSFET. Its gate-threshold voltage V_GS(th) ranges from -2 V to -4 V, and it is characterized for R_DS(on) at V_GS = -10 V. Driving it with 3.3 V or 5 V logic signals will result in incomplete turn-on and excessive conduction loss. A dedicated gate driver capable of delivering -10 V is required for optimal performance of IRF9610STRL.

What is the thermal resistance from junction to ambient for IRF9610STRL in standard PCB mount?

For IRF9610STRL mounted on a 1" square FR-4 PCB, the maximum junction-to-ambient thermal resistance R_thJA is 40 °C/W. This value assumes standard JEDEC test conditions and is significantly lower than the 62 °C/W rating for still-air ambient. Proper copper pour area under the drain tab is essential to achieve this thermal performance in actual designs using IRF9610STRL.

Can IRF9610STRL be used in parallel configurations?

Yes, IRF9610STRL is designed for ease of paralleling, as stated in its official features list. Its positive temperature coefficient of R_DS(on) (confirmed by normalized on-resistance vs. temperature curve) promotes current sharing among paralleled devices. However, matched gate drive paths and symmetrical PCB layout are mandatory to avoid current imbalance; individual gate resistors are recommended to dampen oscillation in IRF9610STRL arrays.

What is the body diode reverse recovery charge (Q_rr) of IRF9610STRL, and why does it matter?

The body diode reverse recovery charge Q_rr of IRF9610STRL is 1.7–2.6 μC, measured at T_J = 25 °C with I_F = -1.8 A and dI/dt = 100 A/μs. This parameter directly impacts switching loss and EMI in hard-switched topologies like buck or flyback converters. Higher Q_rr increases turn-off loss in the complementary switch and can cause voltage overshoot; designers must account for this when selecting snubbers or optimizing dead time for IRF9610STRL-based circuits.

IRF9610STRL Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 1.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 900mA, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 170 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 20W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF9610STRL FAQ

1.How can I place an order for IRF9610STRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF9610STRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF9610STRL reliable?

The price and inventory of IRF9610STRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9610STRL is usually 5 days.

3.What payment methods are accepted for IRF9610STRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9610STRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF9610STRL?

IRF9610STRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF9610STRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF9610STRL?

For technical support, including IRF9610STRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9610STRL requirements.

6.How does Aetrix verify that IRF9610STRL is sourced from the original manufacturer or authorized distributors?

All IRF9610STRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9610STRL meets industry standards.

7.What is the process for return or replacement of IRF9610STRL?

All IRF9610STRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF9610STRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF9610STRL part is unused and in its original packaging.

Return procedure for IRF9610STRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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