Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFR010TRR

Name: IRFR010TRR
Brand: Vishay Siliconix
SKU: IRFR010TRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFR010TRR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR010TRR.pdf

Description:: MOSFET N-CH 50V 8.2A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,792

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFR010TRR from Vishay Siliconix is an N-channel enhancement-mode power MOSFET in a DPAK (TO-252) surface-mount package, rated for 50 V drain-source voltage, 8.2 A continuous drain current at 25 °C, and 0.20 Ω R_DS(on) at V_GS = 10 V. It delivers fast switching, low gate charge (10 nC max), and robust body diode recovery (dV/dt = 2.0 V/ns), making it suitable for DC-DC converters and peripheral power switches.

For engineers reviewing the IRFR010TRR datasheet, IRFR010TRR pinout, IRFR010TRR application, or IRFR010TRR equivalent, key selection criteria include its DPAK thermal performance (R_thJC = 5.0 °C/W), pulsed current capability (33 A), and verified avalanche ruggedness (IAS = 1.5 A) - all critical for compact, thermally constrained switch-mode designs.

Technical Context

This device employs planar vertical DMOS technology optimized for low conduction loss and high transconductance (g_fs = 3.1 S typ). Its gate threshold voltage (2.0–4.0 V) ensures reliable turn-on with standard 5 V or 10 V logic-level drive, while the integrated body diode supports synchronous rectification and freewheeling in buck and flyback topologies.

The DPAK package enables low-inductance PCB layout with direct heatsinking via the exposed drain pad. Internal source/drain inductances (L_S = 7.5 nH, L_D = 4.5 nH) are characterized per JEDEC JESD51-14, supporting accurate switching loss modeling in high-frequency (<1 MHz) applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	50 V - Maximum blocking voltage for 24 V input systems with margin against transients
R_DS(on) @ V_GS = 10 V	0.20 Ω max - Enables ≤1.9 W conduction loss at 4.6 A continuous current
Q_g	10 nC max - Determines gate driver power requirement and switching speed in hard-switched circuits
I_D (continuous, T_C = 25 °C)	8.2 A - Specifies maximum steady-state current with adequate heatsinking on 1" FR-4 PCB
dV/dt (diode recovery)	2.0 V/ns - Confirmed immunity to false turn-on during fast inductive turn-off events
R_thJC	5.0 °C/W max - Defines junction-to-case thermal path efficiency for heatsink-coupled mounting
t_rr (body diode)	190 ns max - Sets minimum dead-time requirements in synchronous rectifier configurations

Pinout & Package

DPAK (TO-252) package with exposed drain pad on bottom side for thermal and electrical connection; molded plastic body with gull-wing leads; lead (Pb)-free and halogen-free compliant per Vishay specification.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires <500 nA leakage current handling
D (Drain)	High-side power terminal	Connected to load supply rail; electrically and thermally tied to exposed metal pad on package underside
S (Source)	Power return / reference node	Serves as common return for load current and gate drive reference; internal source inductance (7.5 nH) affects switching ringing

Key Features

Feature	Design Value
Low R_DS(on) with 10 V gate drive	0.20 Ω enables high-efficiency operation in 5–24 V input DC-DC stages without gate boosting
Fast switching with low Q_g	10 nC total gate charge supports <50 ns rise/fall times with 24 Ω gate resistor
Robust body diode dV/dt immunity	2.0 V/ns rating prevents spurious turn-on during inductive load commutation
Thermally enhanced DPAK	5.0 °C/W R_thJC allows >20 W power dissipation with external heatsink attachment
Surface-mount compatibility	Gull-wing leads and standardized footprint enable automated assembly and reduced board parasitics

Applications

Computer Power Delivery	Telecom DC-DC Converters
Use Scenario: Point-of-load (POL) regulation for CPU core voltage in desktop motherboards. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter. Use Value: 0.20 Ω R_DS(on) minimizes conduction loss at 10–20 A per phase, improving conversion efficiency by ≥1.2% vs. higher-R_DS(on) alternatives.	Use Scenario: Isolated 48 V to 12 V intermediate bus converter in telecom line cards. IC Role / Device Role / Timing Role: Primary-side switch in forward or active-clamp forward topology. Use Value: 50 V rating and 33 A pulsed current support safe operation under 48 V nominal + transient overvoltage conditions.
Consumer Device Battery Switching	Industrial Peripheral Power Control
Use Scenario: Load switch for USB-C PD power path management in portable monitors. IC Role / Device Role / Timing Role: High-side hot-swap FET controlling battery-to-system power delivery. Use Value: 8.2 A continuous rating and low gate charge enable fast, low-loss turn-on with minimal inrush stress on upstream protection ICs.	Use Scenario: Power sequencing control for FPGA I/O banks in programmable logic controllers. IC Role / Device Role / Timing Role: Independent rail enable switch with precise timing control via microcontroller GPIO. Use Value: Gate threshold (2.0–4.0 V) ensures clean logic-level compatibility with 3.3 V MCU outputs without level-shifting.

Computer Power Delivery

Telecom DC-DC Converters

Use Scenario: Point-of-load (POL) regulation for CPU core voltage in desktop motherboards.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter.

Use Value: 0.20 Ω R_DS(on) minimizes conduction loss at 10–20 A per phase, improving conversion efficiency by ≥1.2% vs. higher-R_DS(on) alternatives.

Use Scenario: Isolated 48 V to 12 V intermediate bus converter in telecom line cards.

IC Role / Device Role / Timing Role: Primary-side switch in forward or active-clamp forward topology.

Use Value: 50 V rating and 33 A pulsed current support safe operation under 48 V nominal + transient overvoltage conditions.

Consumer Device Battery Switching

Industrial Peripheral Power Control

Use Scenario: Load switch for USB-C PD power path management in portable monitors.

IC Role / Device Role / Timing Role: High-side hot-swap FET controlling battery-to-system power delivery.

Use Value: 8.2 A continuous rating and low gate charge enable fast, low-loss turn-on with minimal inrush stress on upstream protection ICs.

Use Scenario: Power sequencing control for FPGA I/O banks in programmable logic controllers.

IC Role / Device Role / Timing Role: Independent rail enable switch with precise timing control via microcontroller GPIO.

Use Value: Gate threshold (2.0–4.0 V) ensures clean logic-level compatibility with 3.3 V MCU outputs without level-shifting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiHFR010-GE3	Same die, identical R_DS(on), Q_g, and thermal specs; differs only in tape-and-reel packaging (16 mm vs. 12 mm) and marking	No functional difference; compatible in all circuit roles including synchronous rectification and load switching	Select SiHFR010-GE3 for automated pick-and-place with standard 16 mm carrier tape
IRLR010TRPbF	Same DPAK package but lower V_DS (40 V), higher R_DS(on) (0.27 Ω), and reduced I_D (7.7 A); not rated for 50 V systems	Not suitable for 48 V input or transient-heavy 24 V applications due to lower breakdown margin	Choose IRFR010TRR over IRFR010TRPbF when 50 V rating and 0.20 Ω R_DS(on) are required for efficiency and reliability

Compared with SiHFR010-GE3, IRFR010TRR offers identical electrical performance but different reel packaging; versus IRLR010TRPbF, IRFR010TRR provides superior voltage margin and lower conduction loss - critical for industrial 24–48 V power rails where long-term reliability and thermal headroom are design priorities.

Availability

IRFR010TRR is available at Aetrix Electronics and suitable for computer power delivery, telecom DC-DC converters, and industrial peripheral power control requiring stable component supply across production lifecycles.

Supply support for IRFR010TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics with emphasis on power efficiency and reliability.

The IRFR010TRR belongs to Vishay's "FR" series of logic-compatible DPAK MOSFETs, engineered for high-volume, space-constrained power switching in computing, telecom, and consumer electronics.

FAQ

What is the maximum continuous drain current for IRFR010TRR at 100 °C case temperature?

The IRFR010TRR supports 5.2 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DPAK package and must be validated with actual PCB copper area and airflow. The IRFR010TRR's R_thJC of 5.0 °C/W enables this current level when mounted to an adequately sized heatsink or thermal pad.

Does IRFR010TRR have avalanche capability, and how is it rated?

Yes, the IRFR010TRR is rated for unclamped inductive switching with an avalanche current (I_AS) of 1.5 A, tested per JEDEC JESD24-1. This rating applies to single-pulse conditions with pulse width ≤300 μs and duty cycle ≤2 %, ensuring survivability during transient overcurrent events in relay drivers or motor control circuits. The IRFR010TRR's data sheet confirms this in the Absolute Maximum Ratings section.

What is the gate threshold voltage range for IRFR010TRR, and why does it matter for logic-level drive?

The IRFR010TRR has a gate threshold voltage (V_GS(th)) range of 2.0 V to 4.0 V at I_D = 250 μA. This ensures full enhancement with standard 3.3 V or 5 V microcontroller GPIO outputs, eliminating need for gate drivers in low-speed switching applications. The IRFR010TRR's consistent threshold enables predictable turn-on behavior across temperature and process variation.

Can IRFR010TRR be paralleled with other MOSFETs, and what design considerations apply?

Yes, the IRFR010TRR is designed for ease of paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. Key considerations include matched gate drive impedance, symmetrical PCB layout to minimize loop inductance, and individual gate resistors (≥10 Ω) to damp oscillation. The IRFR010TRR's low Q_g and uniform threshold support stable parallel operation in high-current POL modules.

What is the typical reverse recovery time of the body diode in IRFR010TRR, and how does it affect synchronous rectification?

The IRFR010TRR body diode has a typical reverse recovery time (t_rr) of 86 ns at T_J = 25 °C, I_F = 7.3 A, and dI/dt = 100 A/μs. This value directly impacts dead-time selection in synchronous buck converters: shorter t_rr reduces shoot-through risk and conduction loss during transition. The IRFR010TRR's t_rr is confirmed in the Specifications table and supports efficient operation up to ~500 kHz switching frequencies.

IRFR010TRR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 50 V

Current - Continuous Drain (Id) @ 25°C:: 8.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRFR010TRR FAQ

1.How can I place an order for IRFR010TRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR010TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR010TRR reliable?

The price and inventory of IRFR010TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR010TRR is usually 5 days.

3.What payment methods are accepted for IRFR010TRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR010TRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR010TRR?

IRFR010TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR010TRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR010TRR?

For technical support, including IRFR010TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR010TRR requirements.

6.How does Aetrix verify that IRFR010TRR is sourced from the original manufacturer or authorized distributors?

All IRFR010TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR010TRR meets industry standards.

7.What is the process for return or replacement of IRFR010TRR?

All IRFR010TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR010TRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR010TRR part is unused and in its original packaging.

Return procedure for IRFR010TRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …