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Infineon Technologies IRF9Z34NSTRR
- Part No.:
- IRF9Z34NSTRR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRF9Z34NSTRR.pdf
- Description:
- MOSFET P-CH 55V 19A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:3,224
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Product details
Overview
IRF9Z34NSTRR from Infineon Technologies is a P-channel enhancement-mode MOSFET rated for -55 V VDSS, -27 A ID (TC = 25°C), RDS(on) ≤ 0.12 Ω at VGS = -10 V, and features TO-220AB package with isolated tab. It serves as a high-side load switch in DC-DC converter synchronous rectification stages and industrial motor control H-bridge legs.
For engineers reviewing the IRF9Z34NSTRR datasheet, IRF9Z34NSTRR pinout, IRF9Z34NSTRR application, or IRF9Z34NSTRR equivalent, key selection criteria include verified gate threshold voltage (-2 to -4 V), guaranteed avalanche energy rating (EAS = 280 mJ), and specified safe operating area (SOA) limits up to 100 µs pulse width.
Technical Context
This MOSFET employs planar stripe cell structure with optimized body diode recovery characteristics (trr = 120 ns, Qrr = 32 nC) and operates in enhancement mode requiring negative gate-to-source bias for conduction. Its SOA curve defines continuous DC current derating above 25°C case temperature and pulse current limits under inductive switching conditions.
The device supports hard-switched topologies with defined maximum dV/dt immunity (50 V/ns) and exhibits gate charge parameters (Qg = 42 nC, Qgs = 9.5 nC) enabling predictable turn-on/turn-off timing in gate driver design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -55 V - Maximum drain-to-source blocking voltage under open-gate condition |
| ID @ TC=25°C | -27 A - Continuous DC current capability with heatsink at 25°C case temperature |
| RDS(on) @ VGS=-10 V | ≤ 0.12 Ω - On-resistance determining conduction loss in power stage |
| Qg | 42 nC - Total gate charge defining driver power requirement and switching speed |
| EAS | 280 mJ - Single-pulse avalanche energy rating for inductive load protection |
| trr | 120 ns - Body diode reverse recovery time affecting commutation losses |
Pinout & Package
Supplied in TO-220AB package with electrically isolated metal tab (drain-connected tab requires insulating mounting hardware). Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Gate (Pin 1) | Control electrode | Receives negative voltage relative to source to initiate channel conduction |
| Drain (Pin 2 / Tab) | High-side power terminal | Connected to load supply rail; tab must be electrically isolated from heatsink |
| Source (Pin 3) | Reference node | Serves as return path for load current and gate drive reference point |
Key Features
| Feature | Design Value |
|---|---|
| Fast body diode recovery | trr = 120 ns enables reduced switching loss in synchronous buck converters |
| Avalanche-rated operation | EAS = 280 mJ allows reliable operation under inductive load turn-off stress |
| Low gate charge | Qg = 42 nC reduces gate driver power dissipation and improves efficiency |
| Enhancement-mode threshold | VGS(th) = -2 to -4 V ensures predictable turn-on with standard logic-level gate drivers |
Applications
| Industrial Motor Control | DC-DC Synchronous Rectification |
|---|---|
Use Scenario: Half-bridge leg in 24 V BLDC motor gate driver circuits. IC Role / Device Role / Timing Role: High-side P-channel switch controlling upper transistor in H-bridge configuration. Use Value: Low RDS(on) minimizes conduction loss during active PWM periods while avalanche rating handles back-EMF spikes. | Use Scenario: Secondary-side synchronous rectifier in isolated 12 V output flyback converters. IC Role / Device Role / Timing Role: Replaces Schottky diode to reduce forward voltage drop and improve efficiency. Use Value: Fast trr prevents shoot-through during dead-time transitions and reduces reverse recovery loss. |
| Power Supply OR-ing | Hot-Swap Circuit Protection |
Use Scenario: Redundant 48 V telecom power feed combining two supplies. IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET for bidirectional current blocking. Use Value: Isolated tab allows direct heatsink mounting without insulation failure risk in high-reliability systems. | Use Scenario: Inrush current limiter in 24 V industrial PLC I/O modules. IC Role / Device Role / Timing Role: High-side switch controlling power delivery to downstream circuitry. Use Value: Guaranteed SOA supports controlled linear-mode operation during hot-plug events without thermal runaway. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF9Z34NPBF | Same die, Pb-free variant with identical RDS(on), Qg, and SOA | No difference in functional use; RoHS-compliant finish only | Select when lead-free compliance is required by end-product regulations |
| STP9P55FP | Higher VDSS (-55 V same), but RDS(on) = 0.18 Ω and Qg = 52 nC | Lower efficiency in high-current DC-DC due to higher conduction and switching loss | Consider only if gate drive voltage margin exceeds -12 V and thermal budget permits higher RDS(on) |
Compared with IRF9Z34NPBF, the IRF9Z34NSTRR offers identical electrical performance in tape-and-reel packaging for automated assembly; versus STP9P55FP, it delivers lower conduction loss and faster switching at the cost of tighter gate drive voltage tolerance.
Availability
IRF9Z34NSTRR is available at Aetrix Electronics and suitable for industrial motor control, DC-DC synchronous rectification, and hot-swap circuit protection requiring stable component supply across production lifecycles.
Supply support for IRF9Z34NSTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The StrongIRFET™ product line delivers rugged, high-current MOSFETs optimized for hard-switched industrial power conversion and motor drive applications with validated avalanche capability.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The IRF9Z34NSTRR has a maximum junction temperature (TJ) rating of 175°C. Continuous operation at this limit requires thermal design ensuring case temperature remains ≤ 100°C under worst-case ambient and power dissipation conditions, per the SOA graph and thermal resistance (RθJC = 1.5°C/W) specification.
Does the TO-220AB package provide electrical isolation between the drain tab and mounting surface?
Yes, the TO-220AB package features an electrically isolated drain tab. The isolation withstands 2500 VRMS for one minute per UL 60950-1, allowing direct mounting to grounded heatsinks without shorting the drain node, provided no mechanical damage compromises the isolation layer.
Can IRF9Z34NSTRR replace IRF9Z34NS in existing designs?
Yes, IRF9Z34NSTRR is a tape-and-reel packaged version of the same silicon die as IRF9Z34NS. Electrical specifications, thermal characteristics, and pinout are identical; only packaging format differs-TR vs. tube-making it suitable for SMT placement without design changes.
What gate resistor value is recommended for 100 kHz switching in a half-bridge configuration?
A 10 Ω gate resistor is recommended to achieve ~100 ns turn-on and ~75 ns turn-off times while limiting peak gate current to < 1.5 A. This balances switching loss reduction against EMI generation and ensures gate driver stability with the device's Qg = 42 nC and Ciss = 1200 pF.
IRF9Z34NSTRR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 35 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 620 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.8W (Ta), 68W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRF9Z34NSTRR FAQ
1.How can I place an order for IRF9Z34NSTRR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF9Z34NSTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF9Z34NSTRR reliable?
The price and inventory of IRF9Z34NSTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF9Z34NSTRR is usually 5 days.
3.What payment methods are accepted for IRF9Z34NSTRR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF9Z34NSTRR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF9Z34NSTRR?
IRF9Z34NSTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF9Z34NSTRR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF9Z34NSTRR?
For technical support, including IRF9Z34NSTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF9Z34NSTRR requirements.
6.How does Aetrix verify that IRF9Z34NSTRR is sourced from the original manufacturer or authorized distributors?
All IRF9Z34NSTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF9Z34NSTRR meets industry standards.
7.What is the process for return or replacement of IRF9Z34NSTRR?
All IRF9Z34NSTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF9Z34NSTRR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF9Z34NSTRR part is unused and in its original packaging.
Return procedure for IRF9Z34NSTRR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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