Infineon Technologies IRFR18N15DTRL

Overview

IRFR18N15DTRL from Infineon Technologies (formerly International Rectifier) is a 150 V, 18 A N-channel enhancement-mode power MOSFET in D-Pak (TO-252AA) package, optimized for high-frequency DC-DC converters. It delivers 0.125 Ω R_DS(on) at V_GS = 10 V, 28 nC total gate charge, and 95 pF effective output capacitance (C_oss,eff), enabling efficient active-clamp forward and telecom 48 V input converter topologies.

For engineers reviewing the IRFR18N15DTRL datasheet, IRFR18N15DTRL pinout, IRFR18N15DTRL application, or IRFR18N15DTRL equivalent, key selection criteria include avalanche energy rating (200 mJ), diode reverse recovery time (130–190 ns), gate-to-drain charge (14–21 nC), and junction-to-case thermal resistance (1.4 °C/W).

Technical Context

This HEXFET® device uses planar vertical DMOS technology with fully characterized dynamic parameters including C_iss (900 pF), C_oss (190 pF at V_DS = 25 V), and Crss (49 pF), supporting accurate switching loss modeling in hard-switched SMPS designs. Its low Q_gd/Q_g ratio (~50%) reduces Miller-induced turn-off delay and improves controllability under high dv/dt conditions.

The integrated body diode features 1.3 V forward voltage at 11 A and 130 ns typical reverse recovery time, validated for unclamped inductive switching with 11 A I_AR and 200 mJ E_{AS. Thermal design is supported by RθJC = 1.4 °C/W and SOA curves extending to 100 µs at 150 V.}

Key Specifications

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration with Gate, Drain, Source terminals assigned per JEDEC outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Compared with STP18NF15 and IXTP18N15P, IRFR18N15DTRL offers superior balance of low Q_gd, validated avalanche robustness, and temperature-stable R_DS(on), making it optimal for unclamped forward and telecom SMPS where reliability under transient stress is critical.

Availability

IRFR18N15DTRL is available at Aetrix Electronics and suitable for telecom DC-DC converters, active-clamp forward power supplies, and industrial SMPS requiring stable component supply across multi-year production cycles.

Supply support for IRFR18N15DTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep heritage in silicon-based power devices.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power conversion in telecom, server, and industrial infrastructure applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR18N15DTRL supports 13 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and ensures safe operation within its 110 W power dissipation envelope when properly heatsinked.

Does this MOSFET require a gate resistor for stability in hard-switched applications?

Yes - a 6.8 Ω gate resistor is used in the official switching time test circuit (Fig. 10a) to control dv/dt and suppress ringing. For 250–500 kHz telecom converters, a 5–10 Ω non-inductive resistor is recommended to limit peak gate current while maintaining <25 ns rise time and avoiding Miller-induced oscillation.

Can the body diode be used for synchronous rectification in a forward converter?

Yes - the body diode has 130–190 ns reverse recovery time and 660–980 nC Q_rr, making it usable for synchronous rectification up to ~300 kHz in well-controlled layouts. However, for >350 kHz or high-efficiency designs, an external Schottky diode is preferred due to lower V_F and zero Q_rr.

Is the IRFR18N15DTRL RoHS-compliant and halogen-free?

Yes - per Infineon's official product change notice PCN-2018-001, all IRFR18N15DTRL units manufactured after Q2 2018 comply with RoHS Directive 2011/65/EU and are halogen-free per IEC 61249-2-21, with lead-free matte tin plating on terminals and compliant molding compound.