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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRFBE20L

Name: IRFBE20L
Brand: Vishay Siliconix
SKU: IRFBE20L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFBE20L

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFBE20L.pdf

Description:: MOSFET N-CH 800V 1.8A I2PAK

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Product details

Overview

IRFBE20L from Vishay Siliconix is an N-channel enhancement-mode power MOSFET in TO-220AB package, rated for 800 V drain-source voltage, 1.8 A continuous drain current at 25 °C, and 6.5 Ω R_DS(on) at V_GS = 10 V. It features repetitive avalanche rating (E_AS = 180 mJ), fast switching (t_r = 17 ns), and robust dV/dt immunity (2.0 V/ns), designed for high-voltage flyback and snubberless AC-DC converter primary switches.

For engineers reviewing the IRFBE20L datasheet, IRFBE20L pinout, IRFBE20L application, or IRFBE20L equivalent, key selection criteria include its 800 V blocking capability, low gate charge (Q_g = 38 nC), avalanche ruggedness, TO-220AB thermal performance (R_thJC = 2.3 °C/W), and body diode recovery characteristics (t_rr = 380–570 ns).

Technical Context

This device operates as a high-voltage unidirectional switch in hard-switched topologies, with gate threshold voltage (V_GS(th)) ranging from 2.0 to 4.0 V and requiring ≥10 V drive for full enhancement. Its dynamic parameters-including C_iss = 530 pF, C_oss = 150 pF, and C_rss = 90 pF-support predictable turn-on/turn-off timing under fixed-gate-resistor conditions (R_g = 18 Ω).

The integrated body diode exhibits V_SD = 1.4 V at I_S = 1.8 A and t_rr = 380–570 ns with Q_rr = 0.94–1.4 μC, enabling operation in quasi-resonant converters where controlled reverse recovery is critical. Thermal design relies on low junction-to-case resistance (2.3 °C/W) and standard TO-220 heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports primary-side switching in universal-input offline SMPS up to 380 V DC bus.
R_DS(on)	6.5 Ω @ V_GS = 10 V - determines conduction loss in continuous-current operation at ≤1.8 A.
Q_g	38 nC - defines gate drive energy requirement and influences switching loss at 100 kHz+ frequencies.
E_AS	180 mJ - enables reliable unclamped inductive switching without external snubbers in flyback designs.
t_r/t_f	17 ns / 27 ns - supports fast transition between on/off states while limiting EMI generation in compact layouts.
dV/dt rating	2.0 V/ns - ensures immunity to false turn-on during high-slew-rate voltage transients across drain-source.
T_J range	−55 to +150 °C - allows deployment in industrial ambient environments with forced-air or passive heatsinking.

Pinout & Package

Package: TO-220AB - industry-standard through-hole power package with isolated tab (drain-connected), optimized for thermal transfer to heatsinks via M3 screw mounting (1.1 N·m torque) and low R_thJC = 2.3 °C/W.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires 10 V for full enhancement.
D (Drain)	High-side power terminal	Connected to high-voltage DC bus or transformer primary; electrically tied to metal tab in TO-220AB.
S (Source)	Reference/return terminal	Serves as common return path for load current and gate drive reference; floating in high-side configurations.

Key Features

Feature	Design Value
Repetitive avalanche rated	Withstands repeated unclamped inductive energy events (I_AR = 1.8 A, E_AR = 5.4 mJ) without degradation.
Dynamic dV/dt immunity	Rated for 2.0 V/ns, preventing spurious turn-on during fast voltage transients in high-noise environments.
Low gate charge	Q_g = 38 nC reduces driver power dissipation and enables use of low-cost gate drivers in cost-sensitive designs.
Fast switching	Turn-on delay (8.2 ns) and fall time (27 ns) support efficient operation above 100 kHz in resonant topologies.
TO-220AB thermal performance	R_thJC = 2.3 °C/W enables 54 W power dissipation at T_C = 25 °C with minimal heatsink requirements.

Applications

AC-DC Flyback Converters	Snubberless Forward Converters
Use Scenario: Primary-side switch in universal-input (85–265 V_AC) offline adapters delivering 10–30 W. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer to secondary winding during each switching cycle. Use Value: Avalanche rating eliminates need for external RCD snubber, reducing BOM count and board space.	Use Scenario: Main switch in 36–72 V input telecom power supplies operating at 200–500 kHz. IC Role / Device Role / Timing Role: Unidirectional main switch synchronizing with transformer reset and output rectification timing. Use Value: Low Q_g and fast t_f minimize switching losses at high frequency, improving efficiency >88%.
Industrial Motor Starters	Capacitor Discharge Ignition (CDI)
Use Scenario: Solid-state contactor for 3-phase motor control in HVAC compressors and pumps. IC Role / Device Role / Timing Role: High-voltage isolation switch handling inrush currents and line transients during startup/stall. Use Value: 800 V V_DS withstands 600 V surge transients per IEC 61000-4-5, ensuring long-term reliability.	Use Scenario: Energy discharge switch in motorcycle and small-engine ignition systems. IC Role / Device Role / Timing Role: Precision-triggered high-current pulse generator discharging stored capacitor into ignition coil primary. Use Value: Repetitive avalanche capability handles coil back-EMF without clamping diodes, simplifying circuit architecture.

AC-DC Flyback Converters

Snubberless Forward Converters

Use Scenario: Primary-side switch in universal-input (85–265 V_AC) offline adapters delivering 10–30 W.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer to secondary winding during each switching cycle.

Use Value: Avalanche rating eliminates need for external RCD snubber, reducing BOM count and board space.

Use Scenario: Main switch in 36–72 V input telecom power supplies operating at 200–500 kHz.

IC Role / Device Role / Timing Role: Unidirectional main switch synchronizing with transformer reset and output rectification timing.

Use Value: Low Q_g and fast t_f minimize switching losses at high frequency, improving efficiency >88%.

Industrial Motor Starters

Capacitor Discharge Ignition (CDI)

Use Scenario: Solid-state contactor for 3-phase motor control in HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-voltage isolation switch handling inrush currents and line transients during startup/stall.

Use Value: 800 V V_DS withstands 600 V surge transients per IEC 61000-4-5, ensuring long-term reliability.

Use Scenario: Energy discharge switch in motorcycle and small-engine ignition systems.

IC Role / Device Role / Timing Role: Precision-triggered high-current pulse generator discharging stored capacitor into ignition coil primary.

Use Value: Repetitive avalanche capability handles coil back-EMF without clamping diodes, simplifying circuit architecture.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	800 V, R_DS(on) = 7.5 Ω, Q_g = 34 nC, TO-220FP (full-pack)	Lower gate charge but higher on-resistance; same avalanche rating (E_AS = 180 mJ)	Preferred where lower drive power is critical and conduction loss budget allows +0.9 Ω increase.
FQP8N80C	800 V, R_DS(on) = 7.0 Ω, Q_g = 42 nC, TO-220	Higher gate charge increases driver loss; identical thermal resistance and dV/dt rating	Selected when supply chain availability favors ON Semiconductor and layout accommodates slightly higher Q_g.

Compared with STP8NK80ZFP and FQP8N80C, the IRFBE20L offers the lowest R_DS(on) (6.5 Ω) among these 800 V TO-220 devices, delivering superior conduction efficiency at 1.1 A, while maintaining matching avalanche ruggedness and thermal interface compatibility.

Availability

IRFBE20L is available at Aetrix Electronics and suitable for AC-DC flyback converters, snubberless forward converters, and industrial motor starters requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for IRFBE20L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on ruggedness, reliability, and high-voltage performance.

The IRFBE20L belongs to Vishay's third-generation high-voltage power MOSFET family, engineered specifically for cost-effective, high-reliability primary-side switching in offline power conversion systems.

FAQ

What is the maximum continuous drain current rating for the IRFBE20L at 100 °C case temperature?

The IRFBE20L supports 1.2 A continuous drain current at T_C = 100 °C, derated linearly from 1.8 A at 25 °C using the specified derating factor of 0.43 W/°C. This reflects thermal limitations of the TO-220AB package under real-world heatsink conditions. Designers must verify junction temperature rise using R_thJC = 2.3 °C/W and actual power dissipation to ensure safe operation within the −55 to +150 °C T_J range.

Does the IRFBE20L have a fully isolated package, and how is the drain terminal connected?

Yes, the IRFBE20L in TO-220AB package has an electrically isolated metal tab that is internally connected to the drain terminal. This configuration allows direct mounting to a heatsink without additional insulation, provided the heatsink remains at drain potential. The isolation rating meets standard safety requirements for Class I equipment, and the tab is rated for 10 lbf·in (1.1 N·m) mounting torque with M3 screws.

What is the typical body diode reverse recovery time (t_rr) of the IRFBE20L, and why does it matter in flyback designs?

The IRFBE20L body diode exhibits t_rr = 380–570 ns at T_J = 25 °C, I_F = 1.8 A, and dI/dt = 100 A/μs. In discontinuous-conduction-mode (DCM) flyback converters, this parameter directly impacts switching loss during the dead-time interval and influences EMI profile. Shorter t_rr reduces voltage overshoot and ringing, easing filter design and improving overall system efficiency.

Can the IRFBE20L be used with 5 V logic-level gate drive?

No - the IRFBE20L is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.0 to 4.0 V, but full enhancement requires V_GS ≥ 10 V to achieve the specified R_DS(on) of 6.5 Ω. At 5 V, the device operates in weak inversion with significantly higher on-resistance (>20 Ω), leading to excessive conduction loss and thermal runaway risk. A dedicated gate driver or level-shifting circuit is required for reliable operation.

How does the IRFBE20L's avalanche energy rating compare to competing 800 V MOSFETs?

The IRFBE20L delivers 180 mJ single-pulse avalanche energy (E_AS) - among the highest in its class for TO-220AB-packaged 800 V MOSFETs. This exceeds STP8NK80ZFP (180 mJ, same value) and matches FQP8N80C (180 mJ), confirming Vishay's focus on ruggedness for unclamped inductive switching. All three parts share identical test conditions (V_DD = 50 V, L = 104 mH), validating direct comparability.

IRFBE20L Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 1.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: I2PAK

IRFBE20L FAQ

1.How can I place an order for IRFBE20L through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBE20L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBE20L reliable?

The price and inventory of IRFBE20L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBE20L is usually 5 days.

3.What payment methods are accepted for IRFBE20L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBE20L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBE20L?

IRFBE20L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBE20L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBE20L?

For technical support, including IRFBE20L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBE20L requirements.

6.How does Aetrix verify that IRFBE20L is sourced from the original manufacturer or authorized distributors?

All IRFBE20L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBE20L meets industry standards.

7.What is the process for return or replacement of IRFBE20L?

All IRFBE20L units undergo pre-shipment inspection (PSI). If there is an issue with IRFBE20L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBE20L part is unused and in its original packaging.

Return procedure for IRFBE20L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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