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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix IRF820ASTRR

Name: IRF820ASTRR
Brand: Vishay Siliconix
SKU: IRF820ASTRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF820ASTRR

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF820ASTRR.pdf

Description:: MOSFET N-CH 500V 2.5A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF820ASTRR from Vishay Siliconix is a 500 V, 2.5 A N-channel power MOSFET in D2PAK (TO-263) package, optimized for high-voltage switching in SMPS and UPS systems. It features 3.0 Ω R_DS(on) at V_GS = 10 V, 17 nC total gate charge, and 140 mJ single-pulse avalanche energy - enabling robust unclamped inductive switching in forward and bridge topologies.

For engineers reviewing the IRF820ASTRR datasheet, IRF820ASTRR pinout, IRF820ASTRR application, or IRF820ASTRR equivalent, key selection criteria include its 500 V V_DS, 2.5 A continuous drain current at T_C = 25 °C, 2.5 °C/W junction-to-case thermal resistance, and validated dV/dt ruggedness up to 3.4 V/ns - all critical for reliable high-speed power conversion design.

Technical Context

This MOSFET employs planar vertical DMOS technology with fully characterized avalanche capability and effective output capacitance (C_{oss eff.} = 28 pF), supporting stable hard-switching operation. Its gate threshold voltage (2.0–4.5 V) and low Q_gd/Q_g ratio (8.5/17 nC) ensure predictable turn-on/turn-off timing under varying drive conditions.

The device integrates a fast-recovery body diode (t_rr = 330–500 ns, Q_rr = 760–1140 nC) and is rated for repetitive avalanche energy (E_AR = 5.0 mJ), making it suitable for circuits requiring intrinsic diode commutation without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - supports primary-side switching in offline 400 V DC bus applications
R_DS(on) max	3.0 Ω at V_GS = 10 V - determines conduction loss in continuous-current SMPS stages
Q_g max	17 nC - defines minimum gate driver current requirement for <100 ns switching transitions
E_AS	140 mJ - enables safe operation during unclamped inductive turn-off events (e.g., transformer reset)
R_thJC	2.5 °C/W - allows 50 W power dissipation with ≤125 °C case temperature rise above ambient
t_rr	330–500 ns - limits reverse recovery losses when used in synchronous rectification or freewheeling paths
dV/dt rating	3.4 V/ns - ensures immunity to parasitic turn-on in high-dV/dt half-bridge node environments

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G, D, S) with drain tab electrically connected to pin 2 (D) and thermally coupled to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive; requires <17 nC charge for full enhancement
D (Drain)	High-voltage power terminal	Connected to 500 V DC bus; electrically and thermally tied to exposed metal tab
S (Source)	Power return and reference node	Serves as local ground reference for gate drive; carries full load current (2.5 A continuous)

Key Features

Feature	Design Value
Low gate charge (Q_g = 17 nC)	Reduces gate driver power loss and simplifies drive circuitry in high-frequency SMPS
Fully characterized C_{oss eff.} (28 pF)	Enables accurate snubberless soft-switching analysis and EMI prediction
140 mJ single-pulse avalanche energy	Eliminates need for external clamping in two-transistor forward and resonant converter designs
Body diode t_rr = 330–500 ns	Minimizes reverse recovery cross-conduction loss in half-bridge freewheeling operation
2.5 °C/W R_thJC	Supports >40 W conduction-limited operation with standard 1"² FR-4 copper pour

Applications

Switch Mode Power Supply (SMPS)	Uninterruptible Power Supply (UPS)
Use Scenario: Primary-side switch in 200–500 W offline flyback or two-transistor forward converters. IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from AC line to isolated DC output. Use Value: 500 V V_DS and 140 mJ E_AS ensure reliable operation during line surges and transformer reset transients.	Use Scenario: Inverter stage switch in line-interactive UPS delivering clean 230 V AC output during brownouts. IC Role / Device Role / Timing Role: Half-bridge power switch modulating DC bus voltage into sinusoidal AC via PWM. Use Value: 3.4 V/ns dV/dt rating prevents false triggering during rapid bus voltage transitions in backup mode.
High-Speed Power Switching	Industrial Motor Drive Stage
Use Scenario: DC link switching in 1–3 kW servo amplifier with 50–100 kHz PWM carrier. IC Role / Device Role / Timing Role: Fast-turning power switch managing regenerative braking energy flow. Use Value: 17 nC Q_g and 8.5 nC Q_gd enable sub-50 ns turn-off with standard 1 A gate drivers.	Use Scenario: Brake chopper switch dissipating excess regenerative energy in HVAC VFDs. IC Role / Device Role / Timing Role: Protected energy dump switch activated during overvoltage fault conditions. Use Value: 5.0 mJ repetitive avalanche rating allows repeated safe clamping of inductive kickback without degradation.

Switch Mode Power Supply (SMPS)

Uninterruptible Power Supply (UPS)

Use Scenario: Primary-side switch in 200–500 W offline flyback or two-transistor forward converters.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer from AC line to isolated DC output.

Use Value: 500 V V_DS and 140 mJ E_AS ensure reliable operation during line surges and transformer reset transients.

Use Scenario: Inverter stage switch in line-interactive UPS delivering clean 230 V AC output during brownouts.

IC Role / Device Role / Timing Role: Half-bridge power switch modulating DC bus voltage into sinusoidal AC via PWM.

Use Value: 3.4 V/ns dV/dt rating prevents false triggering during rapid bus voltage transitions in backup mode.

High-Speed Power Switching

Industrial Motor Drive Stage

Use Scenario: DC link switching in 1–3 kW servo amplifier with 50–100 kHz PWM carrier.

IC Role / Device Role / Timing Role: Fast-turning power switch managing regenerative braking energy flow.

Use Value: 17 nC Q_g and 8.5 nC Q_gd enable sub-50 ns turn-off with standard 1 A gate drivers.

Use Scenario: Brake chopper switch dissipating excess regenerative energy in HVAC VFDs.

IC Role / Device Role / Timing Role: Protected energy dump switch activated during overvoltage fault conditions.

Use Value: 5.0 mJ repetitive avalanche rating allows repeated safe clamping of inductive kickback without degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	500 V, 4.4 Ω R_DS(on), 12 nC Q_g, TO-220FP package	Higher R_DS(on) increases conduction loss; lower Q_g eases drive but reduces dV/dt immunity	Prefer for space-constrained through-hole designs where thermal mass compensates for higher on-resistance
IXTP50N10P	100 V, 50 A, 0.022 Ω R_DS(on), TO-220 package	Lower voltage rating precludes use in 400 V DC bus; superior current handling for low-V_DS motor control	Select only for secondary-side or low-voltage DC-DC stages - not a functional replacement for IRF820ASTRR

Compared with STP5NK50ZFP and IXTP50N10P, IRF820ASTRR delivers optimal balance of 500 V blocking, 2.5 Ω on-resistance, and 140 mJ avalanche robustness in surface-mount D2PAK - making it uniquely suited for compact, high-reliability primary-side SMPS designs where layout density and transient immunity are critical.

Availability

IRF820ASTRR is available at Aetrix Electronics and suitable for switch mode power supplies, uninterruptible power systems, and high-speed industrial power switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF820ASTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for demanding industrial and computing applications.

The IRF820A family was engineered for high-voltage, medium-current switching in offline power conversion - emphasizing avalanche ruggedness, gate drive simplicity, and thermal performance in surface-mount packages.

FAQ

What is the maximum continuous drain current rating for IRF820ASTRR at 100 °C case temperature?

The IRF820ASTRR has a maximum continuous drain current (I_D) of 1.6 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package under sustained high-power operation and must be verified against actual board-level thermal resistance in the target layout.

Does IRF820ASTRR support logic-level gate drive?

No, IRF820ASTRR is not a logic-level MOSFET. Its gate threshold voltage range is 2.0–4.5 V, but full enhancement requires V_GS = 10 V to achieve the specified 3.0 Ω R_DS(on). Driving IRF820ASTRR with 5 V logic will result in significantly higher on-resistance and unacceptable conduction losses.

What is the body diode reverse recovery charge (Q_rr) for IRF820ASTRR?

The body diode reverse recovery charge for IRF820ASTRR is specified as 760–1140 nC at T_J = 25 °C, I_F = 2.5 A, and dI/dt = 100 A/μs. This parameter directly impacts switching loss and EMI in topologies relying on the intrinsic diode for freewheeling, such as asymmetrical half-bridge configurations.

Can IRF820ASTRR be used in parallel configurations?

IRF820ASTRR can be paralleled only with careful attention to gate drive matching, source inductance balancing, and thermal coupling. Its positive R_DS(on) temperature coefficient provides inherent current sharing, but layout asymmetry may cause unequal current distribution - especially given its 17 nC Q_g and 8.5 nC Q_gd values that affect dynamic turn-on timing.

Is IRF820ASTRR RoHS-compliant and halogen-free?

Yes, IRF820ASTRR is both RoHS-compliant and halogen-free, as confirmed by Vishay's material categorization documentation (www.vishay.com/doc?99912). The "TRR" suffix denotes tape-and-reel packaging for automated assembly, consistent with lead (Pb)-free and halogen-free manufacturing standards.

IRF820ASTRR Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 2.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 340 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

IRF820ASTRR FAQ

1.How can I place an order for IRF820ASTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF820ASTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF820ASTRR reliable?

The price and inventory of IRF820ASTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF820ASTRR is usually 5 days.

3.What payment methods are accepted for IRF820ASTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF820ASTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF820ASTRR?

IRF820ASTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF820ASTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF820ASTRR?

For technical support, including IRF820ASTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF820ASTRR requirements.

6.How does Aetrix verify that IRF820ASTRR is sourced from the original manufacturer or authorized distributors?

All IRF820ASTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF820ASTRR meets industry standards.

7.What is the process for return or replacement of IRF820ASTRR?

All IRF820ASTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRF820ASTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF820ASTRR part is unused and in its original packaging.

Return procedure for IRF820ASTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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