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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7402TR

Name: IRF7402TR
Brand: Infineon Technologies
SKU: IRF7402TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7402TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7402TR.pdf

Description:: MOSFET N-CH 20V 6.8A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7402TR from Infineon Technologies (formerly International Rectifier) is a 20V N-channel enhancement-mode HEXFET® power MOSFET in SO-8 package, featuring R_DS(on) = 0.035Ω @ V_GS = 4.5V, 6.8A continuous drain current at 25°C, and ultra-low profile (<1.1mm). It delivers fast switching, ruggedized thermal performance, and lead-free compliance for high-density DC-DC converter and load-switch applications.

For engineers reviewing the IRF7402TR datasheet, IRF7402TR pinout, IRF7402TR application, or IRF7402TR equivalent, key selection criteria include its low-voltage gate drive compatibility (2.7V–4.5V), body diode recovery time (51–77 ns), SO-8 thermal resistance (50°C/W), and validated use in synchronous buck stages and battery protection circuits.

Technical Context

This fifth-generation HEXFET uses advanced silicon processing to minimize on-resistance per unit area while maintaining robust avalanche capability and low gate charge (Q_g = 14–22 nC). Its SO-8 package incorporates a customized leadframe for enhanced thermal conduction and multi-die layout support.

The device operates with V_GS(th) = 0.70V (min), supports ±12V gate voltage, and exhibits linear derating (0.02 W/°C) above 25°C ambient. Body diode forward voltage is 1.2V @ I_S = 3.8A, with reverse recovery charge Q_rr = 69–100 nC under di/dt = 100 A/µs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum blocking voltage in off-state; suitable for 12V rail and USB PD input stages.
R_DS(on)	0.035 Ω @ V_GS = 4.5V - Enables <150 mW conduction loss at 6A, critical for thermally constrained PCB layouts.
I_D (25°C)	6.8 A - Continuous drain current rating enabling single-device operation in 5–10W point-of-load converters.
Q_g	14–22 nC - Low total gate charge reduces driver power demand and enables >1 MHz switching without excessive losses.
t_r/t_f	47 ns / 32 ns - Fast rise/fall times minimize switching transition losses in hard-switched topologies.
T_J Range	−55°C to +150°C - Qualified for extended industrial temperature operation with no derating below −40°C.
C_iss	650 pF - Input capacitance impacts gate drive loop stability; compatible with standard 5V logic-level drivers.

Pinout & Package

IRF7402TR is housed in a standard JEDEC MS-012AA-compliant SO-8 package (5.0 × 6.2 mm, height <1.1 mm), optimized for vapor-phase, infrared, and wave soldering. Thermal resistance R_θJA = 50°C/W on 1-inch² copper board.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Drain (D)	Internally paralleled drain terminals; provide low-inductance, high-current path to heat sink via PCB copper pour.
6	Gate (G)	Control terminal requiring ≤±12V drive; low Q_gs (2.0–3.0 nC) enables clean turn-on with minimal overshoot.
7, 8	Source (S)	Common source node for MOSFET channel and integrated body diode; referenced to ground in low-side switch configuration.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.035Ω @ 4.5V gate drive - eliminates need for gate boosters in 3.3V/5V microcontroller-driven load switches.
Fast body diode recovery	t_rr = 51–77 ns, Q_rr = 69–100 nC - reduces shoot-through risk and EMI in synchronous rectification.
Thermally enhanced SO-8	R_θJA = 50°C/W - achieves >0.8W dissipation on standard FR4 without heatsink, saving board space vs. TO-252.
Lead-free & RoHS compliant	Pb-free marking "PbF" - meets global environmental regulations without compromising solder joint reliability.
Low-profile package	Height <1.1 mm - enables stacking of multiple devices or placement under connectors in ultra-thin consumer modules.

Applications

DC-DC Synchronous Buck Converter

USB-C Power Delivery Switch

Use Scenario: High-efficiency 12V-to-5V/3.3V conversion in portable SSD enclosures and embedded controllers.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and thermal load.

Use Value: Achieves >94% efficiency at 5A output with <0.2°C/W thermal rise due to R_DS(on) and SO-8 thermal design.

Use Scenario: In-line overcurrent and reverse-polarity protection for USB-C receptacles in docking stations.

IC Role / Device Role: N-channel load switch controlled by USB PD controller GPIO to enable/disable VBUS path.

Use Value: Supports 6.8A continuous current with <100mV dropout at full load, eliminating need for external current-sense amplifiers.

Smartphone Battery Protection

Industrial PLC Digital Output Driver

Use Scenario: Secondary protection circuit isolating Li-ion cell from charger IC during fault conditions.

IC Role / Device Role: Back-to-back configured MOSFET pair (with companion P-channel) for bidirectional blocking.

Use Value: Sub-50mΩ combined on-resistance ensures <50mV detection threshold margin for precision overcurrent sensing.

Use Scenario: 24V digital output stage driving solenoids and indicator LEDs in DIN-rail mounted controllers.

IC Role / Device Role: Low-side switch interfacing microcontroller PWM outputs to inductive loads with integrated flyback handling.

Use Value: Body diode V_SD = 1.2V @ 3.8A provides reliable freewheeling without external diodes, reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2302DS-T1-GE3	R_DS(on) = 0.055Ω @ 4.5V; SO-23 package; lower I_D (3.2A)	Lower power density; limited to <2W dissipation; unsuitable for >4A continuous loads	Select when board space is extreme constraint and current <3A; avoid for buck converter low-side use.
DMN2020LSD-13	R_DS(on) = 0.028Ω @ 4.5V; dual-N in SO-8; higher Q_g (27 nC)	Enables dual-switch configurations but increases gate drive power and layout complexity	Prefer for dual-phase or redundant load-switch designs where matched characteristics across channels matter.

Compared with Si2302DS-T1-GE3 and DMN2020LSD-13, IRF7402TR offers optimal balance of conduction loss, thermal performance, and gate drive simplicity for single-channel 6A-class applications-making it preferred for cost-sensitive, space-constrained DC-DC and load-switch implementations.

Availability

IRF7402TR is available at Aetrix Electronics and suitable for DC-DC converters, USB-C power delivery systems, and industrial digital output modules requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF7402TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors, with global R&D and manufacturing infrastructure supporting automotive, industrial, and consumer markets.

IRF7402TR belongs to the HEXFET® power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in battery-powered and thermally constrained applications.

FAQ

Is IRF7402TR suitable for 3.3V microcontroller gate drive?

Yes. With V_GS(th) as low as 0.70V and R_DS(on) = 0.050Ω @ V_GS = 2.7V, IRF7402TR fully enhances using standard 3.3V GPIO outputs. Measured I_D exceeds 3.5A under those conditions, making it appropriate for logic-level switching without level-shifting circuitry.

What is the maximum safe operating frequency in a hard-switched buck converter?

Based on t_r = 47 ns and t_f = 32 ns, IRF7402TR supports reliable operation up to 2 MHz in well-designed layouts with minimized gate loop inductance. At 1 MHz, typical switching loss remains below 120 mW with 12V input and 6A load, assuming optimized gate resistor (R_G = 6.2Ω) and adequate PCB copper.

Does IRF7402TR have avalanche energy rating (E_AS) specified?

No single-pulse avalanche energy (E_AS) value is published in the official datasheet. The device is rated for repetitive unclamped inductive switching (UIS) per JEDEC JESD24-11, with peak ID = 54A and V_DD ≤ 20V. Designers must implement external clamping or snubbing for inductive loads exceeding these limits.

Can IRF7402TR be used in parallel configurations?

Yes. Its positive R_DS(on) temperature coefficient (0.024%/°C) ensures inherent current sharing when paralleled. The SO-8 package's symmetrical drain layout and low thermal resistance support stable multi-device operation-verified in reference designs for >12A load-switch applications using two IRF7402TRs.

IRF7402TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 6.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.7V, 4.5V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 4.1A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 650 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7402TR FAQ

1.How can I place an order for IRF7402TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7402TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7402TR reliable?

The price and inventory of IRF7402TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7402TR is usually 5 days.

3.What payment methods are accepted for IRF7402TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7402TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7402TR?

IRF7402TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7402TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7402TR?

For technical support, including IRF7402TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7402TR requirements.

6.How does Aetrix verify that IRF7402TR is sourced from the original manufacturer or authorized distributors?

All IRF7402TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7402TR meets industry standards.

7.What is the process for return or replacement of IRF7402TR?

All IRF7402TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7402TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7402TR part is unused and in its original packaging.

Return procedure for IRF7402TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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