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Vishay Siliconix IRF740LCSTRL

Part No.:
IRF740LCSTRL
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRF740LCSTRL.pdf
Description:
MOSFET N-CH 400V 10A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,060

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Product details

Overview

IRF740LCSTRL from Vishay Siliconix is a 400 V, 10 A N-channel power MOSFET in TO-220AB package, featuring 0.55 Ω RDS(on) at VGS = 10 V, 39 nC total gate charge, and repetitive avalanche rating-designed for high-frequency switch-mode power supplies, DC-DC converters, and motor control circuits.

For engineers reviewing the IRF740LCSTRL datasheet, IRF740LCSTRL pinout, IRF740LCSTRL application, or IRF740LCSTRL equivalent, key selection criteria include its 400 V VDS, ultra-low Qg/Qgd ratio, enhanced ±30 V VGS rating, and proven ruggedness in unclamped inductive switching.

Technical Context

This device employs Vishay's LCDMOS technology to achieve significantly lower gate charge and reduced Ciss/Coss/Crss versus conventional MOSFETs-enabling MHz-range switching at high current without added cost. Its 1.0 °C/W RthJC and 125 W PD support thermally demanding industrial loads.

The IRF740LCSTRL integrates a robust body diode with 380–570 ns reverse recovery time and 2.8–4.2 μC Qrr, and is rated for repetitive avalanche energy (EAR = 13 mJ) and single-pulse avalanche (EAS = 520 mJ), confirming suitability for hard-switched topologies with inductive stress.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 400 V - supports primary-side switching in offline SMPS up to 265 V AC input with margin
RDS(on) @ VGS = 10 V 0.55 Ω - limits conduction loss to ≤3.3 W at 7.7 A RMS in continuous operation
Qg (max) 39 nC - reduces gate driver power demand and enables use of low-current drivers (e.g., TC442x)
Qgd/Qg ratio 48.7% (19/39 nC) - improves Miller immunity and dv/dt ruggedness during turn-off
EAS 520 mJ - withstands unclamped inductive energy spikes in relay/motor drive snubberless designs
TJ range −55 °C to +150 °C - qualified for industrial ambient environments and sealed enclosure thermal profiles

Pinout & Package

TO-220AB package with isolated tab (drain-connected), standard 3-lead through-hole mounting, 1.0 °C/W junction-to-case thermal resistance, and 10 lbf·in (1.1 N·m) recommended mounting torque.

Pin/Terminal Circuit Role Design Meaning
G (Gate) Control electrode Accepts 10 V logic-level drive; ±30 V max rating prevents gate oxide damage during transient coupling
D (Drain) High-side power terminal Internally connected to metal tab; requires insulated mounting hardware when heatsink is grounded
S (Source) Power return/reference node Serves as local ground reference for gate drive; source inductance (LS = 7.5 nH) impacts switching waveform ringing

Key Features

Feature Design Value
Ultra-low gate charge (Qg = 39 nC) Enables >1 MHz switching in resonant LLC converters while keeping gate loss <150 mW at 12 V drive
Enhanced ±30 V VGS rating Prevents gate failure during ESD events or layout-induced overshoot in high-dv/dt environments
Reduced Ciss/Coss/Crss Ciss = 1100 pF, Coss = 190 pF, Crss = 18 pF - minimizes capacitive coupling and improves light-load efficiency
Repetitive avalanche rated Rated for IAR = 10 A and EAR = 13 mJ - supports reliable operation in flyback snubberless or active clamp circuits
Low internal source inductance (LS = 7.5 nH) Reduces voltage spike during di/dt transients, easing gate drive loop stability and reducing need for external gate resistors

Applications

Switch-Mode Power Supply DC-DC Converter

Use Scenario: Primary-side switch in 100–300 W offline flyback or forward converter.

IC Role / Device Role / Timing Role: High-voltage power switch controlled by PWM controller (e.g., UC384x) with 50–200 kHz switching.

Use Value: 400 V VDS and 520 mJ EAS eliminate need for external RCD snubber in medium-power flyback designs.

Use Scenario: Synchronous rectifier or high-side switch in isolated 48 V–12 V industrial DC-DC module.

IC Role / Device Role / Timing Role: Main power switch in half-bridge topology operating at 200–500 kHz.

Use Value: Low Qg and 0.55 Ω RDS(on) reduce total switching + conduction losses below 4.2 W at 6 A load.

Motor Drive Lighting Ballast

Use Scenario: Half-bridge leg in 3-phase BLDC inverter for HVAC fan or pump control.

IC Role / Device Role / Timing Role: N-channel high-side switch driven via bootstrap gate driver (e.g., IR2101).

Use Value: 10 A continuous ID and 32 A pulsed IDM support 1.5 kW peak output with thermal headroom at 100 °C case.

Use Scenario: Resonant switch in electronic CFL or LED driver ballast operating above 30 kHz.

IC Role / Device Role / Timing Role: Hard-switched power transistor in series-resonant tank circuit.

Use Value: Ultra-low Crss (18 pF) and fast tr/tf (31/20 ns) minimize dead-time losses and improve zero-voltage switching margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP4NK50ZFP 500 V VDS, 3.8 Ω RDS(on), 14 nC Qg, TO-220FP package (isolated drain) Higher voltage rating but higher on-resistance; better suited for low-current, high-VDS standby circuits Select when 500 V margin is mandatory and average current <2 A; avoid for high-current SMPS due to conduction loss penalty
IXTP12N50D2 500 V VDS, 0.55 Ω RDS(on), 42 nC Qg, TO-220AC package (non-isolated tab) Near-identical RDS(on) and VDS, but higher Qg and non-isolated drain requires grounded heatsink Use where heatsink is system-ground referenced and 500 V rating justifies minor gate drive overhead increase

Compared with STP4NK50ZFP and IXTP12N50D2, the IRF740LCSTRL delivers optimal balance of 400 V rating, low RDS(on), and ultra-low Qg-making it preferred for high-efficiency, medium-power SMPS where thermal and gate drive constraints dominate.

Availability

IRF740LCSTRL is available at Aetrix Electronics and suitable for switch-mode power supplies, DC-DC converters, and motor control systems requiring stable component supply, long-term industrial lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for IRF740LCSTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

The IRF740LCSTRL belongs to Vishay's LCDMOS low-charge power MOSFET family-engineered specifically to reduce gate drive burden and switching losses in high-frequency power conversion without compromising ruggedness or cost.

FAQ

What is the maximum continuous drain current for IRF740LCSTRL at 100 °C case temperature?

The IRF740LCSTRL has a maximum continuous drain current (ID) of 6.3 A at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied in thermal design calculations for sustained operation. The IRF740LCSTRL maintains safe operation within this limit when mounted on a properly sized heatsink with thermal interface material.

Does IRF740LCSTRL have an integrated body diode, and what are its key parameters?

Yes, the IRF740LCSTRL includes an integral reverse p–n junction body diode. Key parameters include 10 A continuous source-drain current (IS), 32 A pulsed diode current (ISM), 2.0 V forward voltage (VSD) at 10 A and 25 °C, and reverse recovery time (trr) of 380–570 ns. These values are measured under defined conditions (TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs) and directly impact performance in freewheeling and synchronous rectification applications.

Is IRF740LCSTRL RoHS-compliant, and what does the 'STRL' suffix indicate?

Yes, IRF740LCSTRL is RoHS-compliant and halogen-free. The 'STRL' suffix denotes tape-and-reel packaging (standard 1000 pcs per reel), distinguishing it from tube-packaged variants like IRF740LCPbF. This packaging format supports automated SMT placement and is verified compliant per Vishay document 99912 and EU Directive 2011/65/EU. The IRF740LCSTRL meets all applicable substance restrictions without lead or brominated flame retardants.

What is the peak diode recovery dv/dt rating for IRF740LCSTRL, and why does it matter?

The IRF740LCSTRL is rated for peak diode recovery dv/dt of 4.0 V/ns, measured under specified test conditions (TJ ≤ 150 °C, ISD ≤ 10 A, dI/dt ≤ 120 A/μs). This parameter defines the maximum rate at which voltage can reappear across the drain-source terminals after body diode conduction-critical for preventing false turn-on during commutation in bridge circuits. Exceeding 4.0 V/ns risks unintended conduction and shoot-through, so layout and snubbing must respect this limit in the IRF740LCSTRL design.

Can IRF740LCSTRL replace IRF740 in existing designs?

The IRF740LCSTRL is not a direct drop-in replacement for the legacy IRF740 due to key differences: it features enhanced ±30 V VGS rating (vs. ±20 V), lower RDS(on) (0.55 Ω vs. 0.55–0.65 Ω), and reduced gate charge (39 nC vs. ~63 nC). While electrically compatible in most circuits, the improved specs may alter gate drive timing and thermal behavior. Validation of switching waveforms, temperature rise, and avalanche stress is required before substituting IRF740LCSTRL into IRF740-based designs.

IRF740LCSTRL Specifications

Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
400 V
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
550mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
39 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1100 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)

IRF740LCSTRL FAQ

1.How can I place an order for IRF740LCSTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF740LCSTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF740LCSTRL reliable?

The price and inventory of IRF740LCSTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF740LCSTRL is usually 5 days.

3.What payment methods are accepted for IRF740LCSTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF740LCSTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF740LCSTRL?

IRF740LCSTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF740LCSTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF740LCSTRL?

For technical support, including IRF740LCSTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF740LCSTRL requirements.

6.How does Aetrix verify that IRF740LCSTRL is sourced from the original manufacturer or authorized distributors?

All IRF740LCSTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF740LCSTRL meets industry standards.

7.What is the process for return or replacement of IRF740LCSTRL?

All IRF740LCSTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRF740LCSTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF740LCSTRL part is unused and in its original packaging.

Return procedure for IRF740LCSTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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