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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Gate Drivers

Infineon Technologies 1EDB6275FXUMA1

Name: 1EDB6275FXUMA1
Brand: Infineon Technologies
SKU: 1EDB6275FXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 1EDB6275FXUMA1

Manufacturer:: Infineon Technologies

Category:: Gate Drivers

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: 1EDB6275FXUMA1.pdf

Description:: IC GATE DRVR HIGH-SIDE 8SOIC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

1EDB6275FXUMA1 from Infineon Technologies is a single-channel isolated gate driver IC using coreless transformer (CT) isolation, designed to drive SiC and GaN power switches in high-frequency topologies. It delivers 5.4 A peak source / 9.8 A peak sink current, features 45 ns propagation delay (±6/−4 ns), 12.2 V/11.5 V UVLO thresholds, and >300 V/ns CMTI - deployed in server SMPS and EV off-board chargers.

For engineers reviewing the 1EDB6275FXUMA1 datasheet, 1EDB6275FXUMA1 pinout, 1EDB6275FXUMA1 application, or 1EDB6275FXUMA1 equivalent, key selection criteria include output-side UVLO matching 15 V gate drive for 650 V CoolSiC™ MOSFETs, rail-to-rail complementary MOS output stage, active clamping under UVLO, and PG-DSO-8 package with 4 mm creepage.

Technical Context

The 1EDB6275FXUMA1 implements dual-domain power management with independent VDDI (3–15 V) and VDDO (up to 20 V) supplies, each with dedicated UVLO monitoring. Its CT-based signal transmission uses pulse repetition encoding with receiver-side watchdog timeout for fail-safe shutdown.

Functional logic supports both IN+ (active-high) and IN− (active-low) inputs with internal pull-down/pull-up biasing and 0.9 V hysteresis. Output stage employs complementary pMOS/nMOS transistors (Ron = 0.95 Ω / 0.48 Ω) enabling true rail-to-rail drive without source-follower voltage drop.

Key Specifications

Parameter	Value and Actual Design Meaning
Propagation delay	45 ns ±6/−4 ns - enables precise timing control in >500 kHz switching converters
Peak output current	5.4 A source / 9.8 A sink at 15 V - drives large Qg MOSFETs with fast dV/dt
UVLO thresholds	12.2 V ON / 11.5 V OFF on output side - optimized for 15 V gate drive of 650 V CoolSiC™ devices
CMTI	>300 V/ns - maintains signal integrity in high-dv/dt half-bridge and LLC resonant circuits
Isolation rating	3000 VRMS per UL 1577 - meets reinforced insulation requirements for industrial and EV charger applications
Package	PG-DSO-8, 150 mil - provides 4 mm input-to-output creepage for compact high-voltage layouts

Pinout & Package

1EDB6275FXUMA1 is housed in an 8-pin PG-DSO-8 (150 mil) package with gull-wing leads, qualified per JEDEC industrial standards. Creepage distance between input and output sides is 4 mm.

Pin/Terminal	Circuit Role	Design Meaning
VDDI	Input-side supply	3–15 V bias for logic and CT transmitter; requires ≥100 nF local decoupling
IN+	Non-inverting input	Active-high LV-TTL-compatible signal; internally pulled down for power-up safety
IN−	Inverting input	Active-low LV-TTL-compatible signal; internally pulled up for power-up safety
GNDI	Input-side ground	Reference return for VDDI and logic inputs; galvanically isolated from GNDO
VDDO	Output-side supply	Up to 20 V gate drive supply; requires ≥20×Ciss ceramic decoupling for ripple control
OUT_SRC	Source output	pMOS switch connecting OUT to VDDO; Ron = 0.95 Ω enables rail-to-rail high-side drive
OUT_SNK	Sink output	nMOS switch connecting OUT to GNDO; Ron = 0.48 Ω ensures fast turn-off of GaN/SiC devices
GNDO	Output-side ground	Reference return for VDDO and gate output; isolated from GNDI by CT barrier

Key Features

Feature	Design Value
Coreless transformer isolation	Enables 3000 VRMS reinforced insulation without aging or LED degradation seen in optocouplers
Active output clamping under UVLO	Clamps OUT to GNDO within tens of nanoseconds even at VDDO ≈ 1 V - prevents unintended turn-on during bootstrap startup
Complementary MOS output stage	Eliminates source-follower voltage drop, delivering full VDDO swing to gate - critical for low-Rds(on) SiC/GaN turn-on
Dual UVLO with hysteresis	Independent 12.2 V/11.5 V thresholds on output side ensure safe operation across 15 V gate drive margin for CoolSiC™

Applications

Server SMPS

EV Off-board Charger

Use Scenario: High-density 48 V input, 12 V/54 A output LLC resonant converter with synchronous rectification.

IC Role / Device Role / Timing Role: Isolated gate driver for high-side CoolSiC™ MOSFET in half-bridge; handles >100 V/ns dv/dt during ZVS transitions.

Use Value: >300 V/ns CMTI and active clamping prevent false triggering during resonant node ringing, ensuring ZVS reliability.

Use Scenario: 11 kW AC/DC OBC using dual-phase interleaved PFC + CLLLC DC/DC stages.

IC Role / Device Role / Timing Role: Gate driver for 650 V CoolSiC™ MOSFETs in CLLLC primary half-bridge; synchronized to 200–300 kHz switching.

Use Value: 45 ns propagation delay with <10 ns skew enables tight dead-time control, minimizing conduction loss in high-power CLLLC.

Solar Microinverter

Industrial UPS

Use Scenario: Single-phase 300 W microinverter with SiC MOSFET-based H-bridge inverter stage.

IC Role / Device Role / Timing Role: Isolated driver for high-side SiC switch in H-bridge; operates with split 15 V gate supply.

Use Value: 12.2 V UVLO ON threshold matches 15 V gate drive requirement, preventing partial turn-on during grid voltage sags.

Use Scenario: 3 kVA online double-conversion UPS with IGBT-based inverter stage and 400 V DC bus.

IC Role / Device Role / Timing Role: Gate driver for high-side IGBT in full-bridge inverter; interfaces with isolated PWM controller.

Use Value: PG-DSO-8 package with 4 mm creepage satisfies reinforced insulation requirements for 400 V DC bus isolation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
1EDB7275FXUMA1	4.2 V/3.9 V output UVLO - lower threshold optimized for 5 V gate drive of 600 V CoolGaN™	Targeted at GaN-based 600 V half-bridges in telecom SMPS, not 650 V CoolSiC™ systems	Select when driving CoolGaN™ with 5 V gate bias; avoid for 15 V CoolSiC™ where 12.2 V UVLO prevents unsafe partial turn-on
1EDB8275FXUMA1	8.0 V/7.0 V output UVLO - mid-range threshold suited for 12 V gate drive of 650 V CoolSiC™ or 600 V CoolMOS™	Used in medium-power industrial SMPS with 12 V gate drive; lacks margin for 15 V CoolSiC™ gate robustness	Choose for cost-sensitive 12 V gate drive designs; 1EDB6275FXUMA1 preferred where 15 V gate overdrive and SOA margin are required

Compared with 1EDB7275FXUMA1 and 1EDB8275FXUMA1, 1EDB6275FXUMA1 provides higher output UVLO thresholds specifically aligned to 15 V gate drive for 650 V CoolSiC™, ensuring full enhancement and SOA compliance under brownout conditions - a critical distinction for high-reliability EV and server power systems.

Availability

1EDB6275FXUMA1 is available at Aetrix Electronics and suitable for server SMPS, EV off-board chargers, and solar microinverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial-grade power conversion.

Supply support for 1EDB6275FXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and qualification infrastructure.

The EiceDRIVER™ 1EDBx275F product line targets high-efficiency, high-frequency power conversion systems using wide-bandgap transistors - emphasizing isolation integrity, timing precision, and robust gate drive for SiC and GaN applications.

FAQ

What is the minimum recommended VDDO bypass capacitance for 1EDB6275FXUMA1?

A minimum capacitance of 20 × Ciss (MOSFET input capacitance) is required between VDDO and GNDO to limit supply ripple to ≤5% of VDDO. For typical 650 V CoolSiC™ MOSFETs with Ciss ≈ 1.2 nF, this equates to ≥24 nF ceramic capacitance placed adjacent to the device. This ensures stable gate drive voltage during high di/dt switching events.

How does the active clamping function behave when VDDO drops below 1 V?

The active clamping circuit remains functional down to ~1 V VDDO, pulling OUT_SNK to GNDO within tens of nanoseconds. This behavior is verified in transient testing and prevents parasitic turn-on during bootstrap capacitor charging delays or supply glitches - a key safety feature absent in non-clamping isolated drivers.

Can IN+ and IN− be used simultaneously to implement differential input logic?

No - IN+ and IN− are logically independent enable inputs, not a differential pair. Table 4 confirms that asserting either IN+ high or IN− low disables the output. Simultaneous assertion violates the defined logic states and may result in undefined output behavior; only one input should be actively driven per application.

Is the 3000 VRMS isolation rating certified for continuous operation or only for type testing?

The 3000 VRMS rating is UL 1577-certified for continuous operation under reinforced insulation conditions per IEC 60747-5-5. It reflects lifetime-rated dielectric strength validated through accelerated life testing, not just short-duration type test compliance - essential for 15-year field deployments in EV chargers and industrial UPS.

1EDB6275FXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Driven Configuration:: High-Side

Channel Type:: Single

Number of Drivers:: 1

Gate Type:: N-Channel MOSFET

Voltage - Supply:: 3V ~ 15V

Logic Voltage - VIL, VIH:: -

Current - Peak Output (Source, Sink):: 5A, 9A

Input Type:: Non-Inverting

High Side Voltage - Max (Bootstrap):: -

Rise / Fall Time (Typ):: 8.3ns, 5ns

Operating Temperature:: -40°C ~ 125°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8-51

1EDB6275FXUMA1 FAQ

1.How can I place an order for 1EDB6275FXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1EDB6275FXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1EDB6275FXUMA1 reliable?

The price and inventory of 1EDB6275FXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1EDB6275FXUMA1 is usually 5 days.

3.What payment methods are accepted for 1EDB6275FXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1EDB6275FXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1EDB6275FXUMA1?

1EDB6275FXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1EDB6275FXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1EDB6275FXUMA1?

For technical support, including 1EDB6275FXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1EDB6275FXUMA1 requirements.

6.How does Aetrix verify that 1EDB6275FXUMA1 is sourced from the original manufacturer or authorized distributors?

All 1EDB6275FXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1EDB6275FXUMA1 meets industry standards.

7.What is the process for return or replacement of 1EDB6275FXUMA1?

All 1EDB6275FXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 1EDB6275FXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1EDB6275FXUMA1 part is unused and in its original packaging.

Return procedure for 1EDB6275FXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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