Infineon Technologies 1EDN7512BXTSA1

Overview

1EDN7512BXTSA1 from Infineon Technologies is a single-channel low-side gate driver IC in PG-SOT23-5-1 package, delivering 4 A source / 8 A sink peak output current, 19 ns typical propagation delay, and 4.2 V/3.9 V UVLO thresholds. It drives logic-level MOSFETs (e.g., OptiMOS™) and GaN HEMTs in half-bridge configurations requiring fast, robust gate control with common-source/sink output topology.

For engineers reviewing the 1EDN7512BXTSA1 datasheet, 1EDN7512BXTSA1 pinout, 1EDN7512BXTSA1 application, or 1EDN7512BXTSA1 equivalent, this page delivers verified electrical parameters, validated SOT23-5 pin mapping, confirmed industrial qualification per JEDEC, and real-world use cases in SMPS, solar micro-inverters, and EV off-board chargers.

Technical Context

The 1EDN7512BXTSA1 implements a rail-to-rail complementary MOS output stage with asymmetrical drive strength (4 A source / 8 A sink), enabling "brake-before-make" switching essential for half-bridge shoot-through prevention. Its dual-input logic architecture (IN+, IN−) features internal pull-down/pull-up biasing to ensure defined output during power-up or floating inputs.

It integrates active UVLO (4.2 V ON / 3.9 V OFF), −10 V input voltage robustness, and 5 A reverse-current tolerance at the output. The device operates from 4.5 V to 20 V supply, with propagation delay accuracy of ±6/−4 ns and output impedance <0.85 Ω (source) / <0.35 Ω (sink).

Key Specifications

Pinout & Package

1EDN7512BXTSA1 is housed in the PG-SOT23-5-1 package: a 5-pin, surface-mount, leaded plastic package with standard footprint and thermal pad not required. Pin 1 is VDD; pin 2 is GND; pins 3 and 4 are differential logic inputs (IN+, IN−); pin 5 is the common-output terminal (OUT) with combined source/sink capability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with 1EDN7512GXTSA1, the 1EDN7512BXTSA1 trades thermal performance for through-hole-compatible assembly and lower moisture sensitivity; versus UCC27517DBVR, it adds critical safety features-differential inputs, −10 V tolerance, and 5 A reverse-current rating-for industrial reliability.

Availability

1EDN7512BXTSA1 is available at Aetrix Electronics and suitable for switch-mode power supplies, solar micro-inverters, and EV off-board chargers requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial-grade performance.

Supply support for 1EDN7512BXTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The EiceDRIVER™ 1EDN751x family is designed specifically for high-reliability, high-speed low-side gate driving in industrial and renewable energy systems - emphasizing robustness, precision timing, and MOSFET/GaN interoperability.

FAQ

What is the maximum allowable supply voltage for 1EDN7512BXTSA1?

The absolute maximum supply voltage is 20 V, as specified in Section 5.1 (Absolute Maximum Ratings) of the Rev. 2.3 datasheet. Operation above 20 V risks permanent damage. For reliable long-term operation, the recommended maximum is 18 V, especially at elevated ambient temperatures (>85°C), to maintain output stage integrity and UVLO margin.

Does 1EDN7512BXTSA1 support 3.3 V logic inputs?

Yes - the IN+ and IN− inputs are LV-TTL compatible with threshold voltages independent of VDD. The typical input high threshold is 2.0 V and low threshold is 0.9 V (1.1 V hysteresis), ensuring reliable recognition of 3.3 V MCU GPIO signals across temperature and process variation without level shifting.

How does the dual-input logic (IN+/IN−) prevent shoot-through in half-bridge configurations?

The IN+ and IN− inputs implement complementary logic: OUT is high only when IN+ is high AND IN− is low. Any other combination (including floating or simultaneous high/low) forces OUT low. This inherent "AND" behavior, combined with internal pull-down/pull-up biasing, guarantees a safe default-OFF state and eliminates race conditions during control signal transitions.

Is an external gate resistor required when using 1EDN7512BXTSA1?

Yes - an external gate resistor (R_g) is mandatory between OUT and the MOSFET/GaN gate to control slew rate, suppress ringing, and limit peak current. Typical values range from 2.2 Ω to 10 Ω depending on switching speed requirements and parasitic inductance. No internal gate resistor is present; omitting R_g risks oscillation and device overstress.