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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Gate Drivers

Infineon Technologies 1EDB9275FXUMA1

Name: 1EDB9275FXUMA1
Brand: Infineon Technologies
SKU: 1EDB9275FXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 1EDB9275FXUMA1

Manufacturer:: Infineon Technologies

Category:: Gate Drivers

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: 1EDB9275FXUMA1.pdf

Description:: IC GATE DRVR HIGH-SIDE 8SOIC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

1EDB9275FXUMA1 from Infineon is a single-channel isolated gate driver IC using coreless transformer (CT) technology to drive Si, SiC, and GaN power switches. It delivers 5.4 A source / 9.8 A sink peak current, features 45 ns propagation delay (±5 ns), 14.9 V/14.4 V UVLO thresholds, and 300 V/ns CMTI in an 8-pin PG-DSO-8 package. It targets high-speed, medium-to-high power systems such as EV off-board chargers and solar microinverters.

For engineers reviewing the 1EDB9275FXUMA1 datasheet, 1EDB9275FXUMA1 pinout, 1EDB9275FXUMA1 application, or 1EDB9275FXUMA1 equivalent, key selection criteria include output-side UVLO level (14.9 V ON / 14.4 V OFF), rail-to-rail sourcing/sinking capability, CT-based isolation integrity under fast dv/dt, and compatibility with 18 V gate-drive requirements for CoolGaN™ and CoolSiC™ devices.

Technical Context

The 1EDB9275FXUMA1 implements dual-domain power management with independent input (VDDI: 3–15 V) and output (VDDO: up to 20 V) supplies, each protected by dedicated UVLO circuits. Its CT-based signal transmission uses pulse repetition encoding with receiver-side watchdog timeout for fail-safe shutdown.

It integrates active output clamping that engages within tens of nanoseconds when VDDO drops below 1.2 V - ensuring safe low-state hold during bootstrap supply ramp-up or transient-induced gate voltage spikes in LLC and half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
Propagation delay	45 ns ±5 ns - enables precise timing control in >500 kHz switching applications without added dead-time margin.
UVLO (ON/OFF)	14.9 V / 14.4 V - optimized for 18 V gate drive of CoolGaN™/CoolSiC™ transistors, preventing partial turn-on in saturation region.
Peak source/sink current	5.4 A / 9.8 A - drives large-input-capacitance wide-bandgap devices with sub-100 ns rise/fall times.
CMTI	>300 V/ns - maintains logic integrity during fast high-side switching node transitions in bridge configurations.
Isolation rating	3000 VRMS (UL 1577) - supports reinforced insulation for industrial and EV charging safety compliance.
Package	PG-DSO-8 (150 mil), 4 mm creepage - compact surface-mount solution with validated PCB layout for high-voltage spacing.

Pinout & Package

1EDB9275FXUMA1 is housed in an 8-pin PG-DSO-8 package (150 mil width) with 4 mm input-to-output creepage distance, qualified per JEDEC JESD47 for industrial reliability.

Pin/Terminal	Circuit Role	Design Meaning
1 VDDI	Input-side supply	3–15 V bias for logic and CT transmitter; requires ≥100 nF local ceramic decoupling.
2 IN+	Non-inverting input	LV-TTL-compatible active-high control; internally pulled down for power-up safety.
3 IN-	Inverting input	Active-low enable/disable; internally pulled up; disables output when high or floating.
4 GNDI	Input-side ground	Reference return for VDDI and logic inputs; galvanically isolated from GNDO.
5 VDDO	Output-side supply	Up to 20 V gate drive supply; requires ≥20×Ciss bypass capacitance for ripple control.
6 OUT_SRC	Source output	pMOS switch to VDDO; 0.95 Ω R_on; enables true rail-to-rail high-side pull-up.
7 OUT_SNK	Sink output	nMOS switch to GNDO; 0.48 Ω R_on; provides strong low-side discharge path.
8 GNDO	Output-side ground	Reference return for VDDO and gate output; isolated from GNDI; ties to MOSFET source.

Key Features

Feature	Design Value
Coreless transformer isolation	Eliminates LED aging and temperature drift issues of optocouplers; supports >30 yr lifetime in continuous operation.
Active output clamping	Engages in <50 ns at VDDO < 1.2 V to prevent unintended GaN/SiC turn-on during bootstrap startup or dv/dt transients.
Dual UVLO with hysteresis	Independent 14.9 V/14.4 V (output) and 4.2 V/3.9 V (input) thresholds ensure coordinated power sequencing and SOA protection.
Rail-to-rail complementary output stage	pMOS source + nMOS sink architecture avoids body-diode conduction loss and enables full VDDO-level gate drive.

Applications

Server SMPS

EV Off-board Charger

Use Scenario: High-density 48 V–12 V intermediate bus converter in cloud server racks operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Isolated gate driver for high-side GaN HEMT in asymmetric half-bridge topology; manages tight dead-time and fast dV/dt immunity.

Use Value: 45 ns propagation delay tolerance enables <10 ns dead-time margin; 300 V/ns CMTI prevents false triggering during 100 V/ns node transitions.

Use Scenario: 11 kW bidirectional AC–DC stage in EV charging station using dual-active-bridge (DAB) with 650 V CoolSiC™ MOSFETs.

IC Role / Device Role / Timing Role: Output-side gate driver for primary-side high-side switch; interfaces with isolated PWM controller via CT link.

Use Value: 14.9 V UVLO ensures full 18 V gate drive for CoolSiC™, avoiding linear-mode operation and thermal runaway during load transients.

Solar Microinverter

Industrial UPS

Use Scenario: Single-phase 300 W microinverter with interleaved flyback topology driving 600 V CoolGaN™ eHEMTs.

IC Role / Device Role / Timing Role: Gate driver for low-side switch in synchronous rectification path; handles reverse recovery stress and shoot-through prevention.

Use Value: Separate source/sink outputs allow independent gate resistor tuning; 9.8 A sink current discharges GaN gate charge in <20 ns for zero-voltage switching.

Use Scenario: Online double-conversion UPS with 3 kVA output using three-phase IGBT-based inverter stage.

IC Role / Device Role / Timing Role: Isolated driver for IGBT gate in high-noise motor drive environment; withstands 50 kV/μs common-mode transients.

Use Value: UL 1577-certified 3000 VRMS isolation meets IEC 62109-1 functional safety requirements for residential UPS systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
1EDB7275FXUMA1	4.2 V/3.9 V output UVLO; lower peak current (5 A/9 A); same package and timing.	Targeted at 5–12 V gate drive for standard Si MOSFETs and low-V_GS GaN devices.	Select when driving OptiMOSTM or low-threshold CoolGaNTM with ≤12 V V_GS.
1EDB6275FXUMA1	12.2 V/11.5 V output UVLO; identical propagation delay and CMTI; same pinout.	Optimized for 15 V gate drive of 650 V CoolSiCTM MOSFETs requiring robust SOA margin.	Select for 650 V CoolSiC™ where 15 V V_GS is required but 18 V headroom is unnecessary.

Compared with 1EDB7275FXUMA1 and 1EDB6275FXUMA1, the 1EDB9275FXUMA1's 14.9 V UVLO and 18 V-compatible output stage uniquely support high-reliability 18 V gate drive for next-gen CoolGaN™ and high-V_GS CoolSiC™ devices in demanding EV and solar applications.

Availability

1EDB9275FXUMA1 is available at Aetrix Electronics and suitable for EV off-board chargers, solar microinverters, server SMPS, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and certified reinforced isolation.

Supply support for 1EDB9275FXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

The EiceDRIVER™ 1EDBx275F product line is designed specifically for isolated gate driving of wide-bandgap power switches in high-frequency, high-reliability power conversion systems - emphasizing timing precision, CMTI robustness, and safety-certified isolation.

FAQ

What is the recommended bypass capacitor for VDDO?

A minimum capacitance of 20 × C_iss (MOSFET input capacitance) is required between VDDO and GNDO to limit supply ripple to ≤5% of VDDO. This ensures stable gate drive voltage during high di/dt switching events and prevents UVLO false triggering due to local droop.

Does 1EDB9275FXUMA1 support both inverting and non-inverting logic inputs?

Yes - it provides dual logic inputs: IN+ (active-high, internally pulled down) and IN- (active-low, internally pulled up). Either can be used independently; if both are driven, IN- takes precedence and forces output low when asserted, enabling hardware fault override capability.

How does the active clamping function behave during UVLO conditions?

When VDDO falls below 1.2 V, the active clamping circuit engages within tens of nanoseconds to forcibly pull OUT_SRC and OUT_SNK to GNDO - regardless of input state. This prevents parasitic turn-on of GaN/SiC switches during bootstrap supply ramp-up or high dv/dt events in resonant topologies.

Can 1EDB9275FXUMA1 drive both Si and wide-bandgap devices?

Yes - its 14.9 V/14.4 V UVLO, 5.4 A/9.8 A peak current, and rail-to-rail output stage support Si MOSFETs, 650 V CoolSiC™, and 600 V CoolGaN™ devices. The high CMTI (>300 V/ns) and fast propagation delay make it especially suited for fast-switching wide-bandgap applications.

1EDB9275FXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: EiceDRIVER™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Driven Configuration:: High-Side

Channel Type:: Single

Number of Drivers:: 2

Gate Type:: IGBT, SiC MOSFET

Voltage - Supply:: 10V ~ 56V

Logic Voltage - VIL, VIH:: -

Current - Peak Output (Source, Sink):: 4A, 8A

Input Type:: Inverting

High Side Voltage - Max (Bootstrap):: 650 V

Rise / Fall Time (Typ):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8

1EDB9275FXUMA1 FAQ

1.How can I place an order for 1EDB9275FXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1EDB9275FXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1EDB9275FXUMA1 reliable?

The price and inventory of 1EDB9275FXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1EDB9275FXUMA1 is usually 5 days.

3.What payment methods are accepted for 1EDB9275FXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1EDB9275FXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1EDB9275FXUMA1?

1EDB9275FXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1EDB9275FXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1EDB9275FXUMA1?

For technical support, including 1EDB9275FXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1EDB9275FXUMA1 requirements.

6.How does Aetrix verify that 1EDB9275FXUMA1 is sourced from the original manufacturer or authorized distributors?

All 1EDB9275FXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1EDB9275FXUMA1 meets industry standards.

7.What is the process for return or replacement of 1EDB9275FXUMA1?

All 1EDB9275FXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 1EDB9275FXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1EDB9275FXUMA1 part is unused and in its original packaging.

Return procedure for 1EDB9275FXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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