Infineon Technologies 1EDN6550BXTSA1

Overview

1EDN6550BXTSA1 from Infineon Technologies is a single-channel high-side and low-side non-isolated gate driver IC with truly differential inputs (TDI), ±200 V static common-mode voltage range, 4 A source / 8 A sink peak output current, 45 ns propagation delay (±7/+10 ns), and 12.2 V/11.5 V UVLO thresholds. It drives SiC MOSFETs, GaN HEMTs, and Kelvin-source MOSFETs in high-parasitic-inductance half-bridge SMPS stages.

For engineers reviewing the 1EDN6550BXTSA1 datasheet, 1EDN6550BXTSA1 pinout, 1EDN6550BXTSA1 application, or 1EDN6550BXTSA1 equivalent, key selection criteria include TDI input robustness under ±200 V DC common-mode shift, rail-to-rail sourcing/sinking capability for fast SiC switching, UVLO hysteresis matching 12 V control rails, and SOT23-6 footprint compatibility with high-density power layouts.

Technical Context

The 1EDN6550BXTSA1 implements a fully differential TDI input stage with passive RC filtering and a high-CMRR amplifier (gain = 4.5), enabling reliable PWM reception despite ground potential shifts up to ±200 V DC between controller and driver domains. Its input path includes a 3rd-order low-pass filter (corner at 12 MHz) and a differential Schmitt trigger with 25 ns pulse extender for noise immunity.

The output stage uses complementary MOS transistors with 0.85 Ω pMOS source resistance and 0.35 Ω nMOS sink resistance, delivering true rail-to-rail drive without level-shifting circuitry. UVLO is fixed at 12.2 V turn-on / 11.5 V turn-off, ensuring stable gate drive only when VDD meets SiC/GaN gate threshold requirements.

Key Specifications

Pinout & Package

1EDN6550BXTSA1 is housed in a PG-SOT23-6 package (JEDEC MO-178AA), with exposed pad for thermal enhancement and industrial-grade qualification per JEDEC JESD47.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-CMR gate driver applications.

Compared with 1EDN7550UXTSA1 and UCC27611DR, the 1EDN6550BXTSA1 uniquely delivers ±200 V static CMR in SOT23-6 with rail-to-rail sourcing-enabling cost-effective, non-isolated high-side drive where layout constraints prohibit larger packages or external isolators.

Availability

1EDN6550BXTSA1 is available at Aetrix Electronics and suitable for server PSUs, telecom DC-DC bricks, and industrial motor controllers requiring stable component supply, JEDEC-qualified industrial temperature operation, and compact SOT23-6 packaging.

Supply support for 1EDN6550BXTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon carbide and gate driver innovation.

The EiceDRIVER™ 1EDNx550 product line targets cost-sensitive, high-reliability power conversion systems requiring non-isolated high-CMR gate drive-specifically for SiC, GaN, and Kelvin-source MOSFET topologies in SMPS and motor control.

FAQ

What is the minimum required input resistor value for 1EDN6550BXTSA1 to achieve ±200 V CMR static?

The datasheet specifies that 127 kΩ, 0.1% tolerance, 1206-form-factor resistors (Rin1 = Rin2) are required to achieve ±200 V static CMR with a 12 V controller supply. Lower values reduce CMR capability and risk exceeding the ±6 V input stage operating range. Resistor power rating must also meet ≥0.125 W derated for continuous operation.

Can 1EDN6550BXTSA1 drive a GaN HEMT requiring negative turn-off voltage?

Yes - the 1EDN6550BXTSA1 supports bipolar gate drive by referencing VDD and GND to appropriate potentials. With VDD = +6 V and GND = −3 V relative to the GaN source, it delivers +6 V turn-on and −3 V turn-off. This requires careful PCB layout to maintain signal integrity and avoid violating absolute maximum ratings on IN+/IN− pins.

Is the 45 ns propagation delay guaranteed over temperature and supply voltage?

Yes - the datasheet guarantees 45 ns typical propagation delay with ±7 ns minimum and +10 ns maximum variation across −40 °C to +125 °C and VDD = 12 V to 15 V. This specification includes process, voltage, and temperature (PVT) corner testing per JEDEC JESD47, making it suitable for timing-critical resonant converters.

Does 1EDN6550BXTSA1 require external bootstrap components when used in high-side configuration?

No - unlike traditional high-side drivers, the 1EDN6550BXTSA1 does not require bootstrap capacitors or diodes. Its TDI architecture accepts common-mode voltage directly at the inputs, and its rail-to-rail output stage sources from VDD and sinks to GND regardless of switch node potential, eliminating bootstrap-related reliability concerns.