Infineon Technologies 1EDN7116UXTSA1

Overview

1EDN7116UXTSA1 from Infineon Technologies is a single-channel, 200 V high-side gate driver IC optimized for GaN Schottky Gate HEMTs and Si MOSFETs, featuring truly differential input (TDI), 2.0 A peak source/sink current, 20 ns input pulse blanking time, ±200 V dynamic common-mode voltage tolerance, and active Miller clamp with 5 A sink capability. It enables robust high-frequency switching in resonant wireless power and synchronous rectifier topologies.

For engineers reviewing the 1EDN7116UXTSA1 datasheet, 1EDN7116UXTSA1 pinout, 1EDN7116UXTSA1 application, or 1EDN7116UXTSA1 equivalent, key selection criteria include TDI noise immunity, bootstrap clamp functionality, Miller clamp strength, UVLO thresholds (3.85 V turn-on, 3.6 V turn-off), and PG-TSNP-7 thermal performance in high-side half-bridge layouts.

Technical Context

The 1EDN7116U implements a fully differential amplifier + Schmitt-trigger input stage that rejects common-mode transients up to 100 V/ns while maintaining precise logic-level detection via matched 47 kΩ input resistors for 3.3 V systems. Its output stage integrates independent pull-up (OUT_SRC) and pull-down (OUT_SNK) paths with active clamping logic triggered at <0.4 V gate voltage.

UVLO monitoring operates with 3.85 V (typ) rising threshold and 3.6 V (min) falling threshold, providing 250 mV hysteresis to suppress false triggering during supply ramp-up/down. The active bootstrap clamp prevents overvoltage on the BST capacitor during dead-time by limiting charge transfer when VBST exceeds VDD + 0.5 V.

Key Specifications

Pinout & Package

1EDN7116UXTSA1 is housed in a thermally enhanced PG-TSNP-7 package (2.1 mm × 1.6 mm × 0.55 mm) with an exposed thermal pad on the bottom side for direct PCB copper connection. The 7-pin configuration supports high-density layout and efficient heat dissipation in compact GaN-based converters.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side GaN gate driver applications.

Compared with 1EDN7126UXTSA1, the 1EDN7116UXTSA1 delivers faster switching with tighter timing control, while versus UCC27611DR it provides integrated GaN-optimized protection-reducing BOM count by 3–5 passive components and improving reliability in high-dv/dt resonant topologies.

Availability

1EDN7116UXTSA1 is available at Aetrix Electronics and suitable for synchronous rectifiers, Class-E wireless power transmitters, DC-DC converters, and BLDC motor drives requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for 1EDN7116UXTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and wide-bandgap solutions, with global R&D centers and ISO/TS 16949-certified manufacturing.

The 1EDN71x6U product line targets high-frequency GaN-based power conversion, delivering integrated protection and differential input architecture to simplify adoption of CoolGaN™ HEMTs in resonant and hard-switched topologies.

FAQ

What is the recommended external resistor value for 3.3 V logic interface?

For 3.3 V logic, both IN+ and IN− require matched 47 kΩ resistors (±0.1% tolerance) to scale common-mode voltage while preserving differential sensitivity. These resistors form part of the TDI front-end and directly determine maximum usable common-mode range. Using wider-tolerance parts reduces effective CMR and may cause false triggering under fast transients.

Does 1EDN7116UXTSA1 support bootstrap operation in high-side configurations?

Yes-it supports bootstrap operation via the BST pin, with an integrated active clamp that limits VBST to VDD + 0.5 V during dead-time. This eliminates risk of bootstrap capacitor overvoltage and removes need for external Zener clamps, enabling reliable high-side drive in half-bridge topologies up to 200 V bus voltage.

How does the active Miller clamp engage and what is its response time?

The active Miller clamp engages automatically when the OUT_SNK voltage falls below 0.4 V, with a propagation delay of ≤3 ns. Once active, it sources up to 5 A sink current through a dedicated low-R_DS(on) path, overriding the standard 2 A output stage to forcibly hold the GaN gate low during Miller plateau and prevent dv/dt-induced turn-on.

Can 1EDN7116UXTSA1 drive Si MOSFETs as well as GaN HEMTs?

Yes-it is explicitly qualified for both CoolGaN™ SG HEMTs and silicon MOSFETs. Its 2 A drive strength, 20 ns blanking, and active clamps are effective for fast Si devices like Superjunction MOSFETs, though optimal gate resistor selection differs due to higher Q_g and lower threshold voltage compared to GaN.