Infineon Technologies 1EDN7126GXTMA1

Overview

1EDN7126GXTMA1 from Infineon is a single-channel, high-side gate driver IC optimized for GaN Schottky Gate HEMTs and Si MOSFETs, featuring truly differential input (TDI), ±200 V common-mode voltage range, 4 A peak source/sink current, active Miller clamp (5 A sink), and adjustable negative charge pump for V_OFF. It enables robust high-frequency switching in half-bridge DC-DC converters and resonant wireless power systems.

For engineers reviewing the 1EDN7126GXTMA1 datasheet, 1EDN7126GXTMA1 pinout, 1EDN7126GXTMA1 application, or 1EDN7126GXTMA1 equivalent, key selection criteria include TDI noise immunity, bootstrap clamp behavior, Miller clamp strength, V_OFF adjustability, and PG-VSON-8 package thermal performance in high dv/dt environments.

Technical Context

The 1EDN7126GXTMA1 implements a fully differential amplifier + Schmitt-trigger input stage with matched external resistor network (33 kΩ for 3.3 V logic) to reject ground bounce and support ±200 V dynamic CMV transients up to 100 V/ns. Its TDI architecture eliminates need for digital isolators in high-side configurations.

It integrates an adjustable charge pump (via VOFF_ADJ resistor divider) to generate programmable negative turn-off rail (–2 V to –5 V), an active bootstrap clamp preventing overvoltage during dead-time, and a dedicated 5 A Miller clamp on OUT_SNK to suppress parasitic turn-on in GaN devices during high dv/dt switching.

Key Specifications

Pinout & Package

1EDN7126GXTMA1 is housed in a thermally enhanced PG-VSON-8 (3.0 × 3.0 mm, 0.5 mm pitch) package with exposed thermal pad (VSS-connected). The 8-pin layout supports compact high-voltage gate drive routing and low-inductance bootstrap loop design.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side GaN gate driving applications.

Compared with UCC27611DR and LM5113SD/NOPB, 1EDN7126GXTMA1 uniquely delivers integrated TDI, 5 A Miller clamp, and programmable V_OFF in a thermally optimized 3×3 mm package-enabling compact, high-reliability GaN designs without external protection components.

Availability

1EDN7126GXTMA1 is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, resonant wireless power transmitters, and GaN-based BLDC motor drives requiring stable component supply, long-term lifecycle assurance, and traceable industrial-grade sourcing.

Supply support for 1EDN7126GXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and wide-bandgap solutions, with leadership in CoolGaN and TRENCHSTOP technologies.

1EDN7126GXTMA1 belongs to the EiceDRIVER™ TDI family, designed specifically to address GaN HEMT gate drive challenges-including Miller-induced turn-on, high dv/dt noise, and bootstrap reliability-in high-efficiency, high-frequency power conversion systems.

FAQ

What is the recommended external resistor value for IN+ and IN− with 3.3 V logic?

For 3.3 V logic, both IN+ and IN− require 33 kΩ resistors to the controller's PWM output and ground respectively. These resistors scale ±200 V common-mode voltage down to safe CMOS levels while maintaining tight matching (±0.1%) to preserve TDI accuracy and CMV rejection.

Can 1EDN7126GXTMA1 drive a 650 V CoolGaN HEMT in a high-side configuration without isolation?

Yes-its ±200 V common-mode voltage range and 100 V/ns dv/dt immunity allow direct high-side connection to 650 V bus topologies. The TDI input eliminates ground-referenced noise coupling, and the active bootstrap clamp ensures stable VDD during dead-time without external Zener diodes.

How does the adjustable VOFF_ADJ pin affect system reliability?

VOFF_ADJ sets the negative turn-off rail from –2 V to –5 V via a resistor divider to VSS. A –4 V setting increases gate noise margin by 2× compared to 0 V, significantly reducing risk of parasitic turn-on during high dv/dt events in GaN half-bridges operating above 300 kHz.

Is the PG-VSON-8 package compatible with standard reflow profiles for GaN power modules?

Yes-the PG-VSON-8 package is qualified for IPC/JEDEC J-STD-020 moisture sensitivity level 3 and supports lead-free reflow up to 260°C peak. Its exposed thermal pad requires ≥80% solder coverage and direct connection to inner-layer copper pour for optimal thermal performance in high-power GaN layouts.