Infineon Technologies 1EDN7126UXTSA1

Overview

1EDN7126UXTSA1 from Infineon Technologies is a single-channel, 200 V high-side gate driver IC optimized for GaN Schottky Gate HEMTs and Si MOSFETs, featuring truly differential input (TDI), 1.5 A peak source/sink current, 40 ns input pulse blanking time, active Miller clamp (5 A sink), and PG-TSNP-7 package - deployed in half-bridge DC-DC converters and BLDC motor drives.

For engineers reviewing the 1EDN7126UXTSA1 datasheet, 1EDN7126UXTSA1 pinout, 1EDN7126UXTSA1 application, or 1EDN7126UXTSA1 equivalent, key selection criteria include TDI common-mode immunity (±200 V), bootstrap clamp functionality, undervoltage lockout thresholds (3.6–4.0 V), and compatibility with 3.3 V/5 V logic without isolators.

Technical Context

The 1EDN7126U implements a fully differential amplifier + Schmitt-trigger input stage enabling robust operation under ±200 V dynamic common-mode transients at up to 100 V/ns, eliminating ground-bounce-induced false triggering in high-speed GaN switching. Its TDI architecture requires matched 47 kΩ (3.3 V) or 75 kΩ (5 V) external input resistors for proper CMR scaling.

Internally, it integrates an active bootstrap clamp preventing overcharging during dead-time and an active Miller clamp engaging within 3 ns when gate voltage drops below 0.4 V - delivering 5 A sink capability independent of variant, ensuring reliable turn-off of GaN devices even under high dV/dt conditions.

Key Specifications

Pinout & Package

1EDN7126UXTSA1 is housed in the PG-TSNP-7 package - a thermally optimized 7-pin leadless package with an exposed thermal pad on the bottom side for efficient heat dissipation in high-frequency GaN applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side GaN gate driver applications.

Compared with 1EDN7116U and 1EDN7136U, the 1EDN7126U offers balanced performance: its 1.5 A drive strength and 40 ns blanking provide optimal trade-off between switching speed and noise rejection for mainstream GaN DC-DC and motor control designs.

Availability

1EDN7126UXTSA1 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, and Class-D audio amplifiers requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for 1EDN7126UXTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in GaN and SiC device ecosystems.

The 1EDN71x6U product line targets high-frequency, high-efficiency power conversion systems using GaN SG HEMTs - designed specifically to overcome gate-driving challenges unique to enhancement-mode GaN transistors.

FAQ

What is the recommended external resistor value for 3.3 V logic interface?

For 3.3 V logic, both IN+ and IN− require matched 47 kΩ resistors to scale common-mode voltage while preserving TDI accuracy. Tight tolerance (±0.1 %) is mandatory to maintain full ±200 V common-mode range and prevent false triggering due to resistor mismatch or PCB layout asymmetry.

Does 1EDN7126UXTSA1 support bootstrap operation in high-side configuration?

No - the BST pin is only used when the device operates as a low-side driver in half-bridge configurations. In true high-side applications, VDD is supplied directly (e.g., via floating bias supply), and BST remains unconnected. The active bootstrap clamp function applies only when BST is utilized.

How does the active Miller clamp engage and what is its impact on layout?

The active Miller clamp activates automatically within 3 ns when OUT_SNK voltage falls below 0.4 V, delivering 5 A sink current regardless of variant. Layout must minimize inductance in the OUT_SNK–VSS path - use short, wide traces and direct connection to the thermal pad - to preserve clamp effectiveness during fast GaN turn-off.

Can 1EDN7126UXTSA1 drive silicon MOSFETs as well as GaN HEMTs?

Yes - it is explicitly qualified for both Infineon CoolGaN™ SG HEMTs and standard Si MOSFETs. Its 1.5 A drive strength, 40 ns blanking, and active protection features make it suitable for medium-power Si-based half-bridges where fast switching and noise immunity are required, though GaN optimization remains its primary design focus.