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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Gate Drivers

Infineon Technologies 1EDN7136GXTMA1

Name: 1EDN7136GXTMA1
Brand: Infineon Technologies
SKU: 1EDN7136GXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 1EDN7136GXTMA1

Manufacturer:: Infineon Technologies

Category:: Gate Drivers

Package:: 10-VFDFN Exposed Pad

Datasheet:: 1EDN7136GXTMA1.pdf

Description:: IC GATE DRVR HI/LOW SIDE 10VFDFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

1EDN7136GXTMA1 from Infineon is a single-channel, high-side gate driver IC optimized for GaN Schottky Gate HEMTs and Si MOSFETs, featuring truly differential input (TDI), ±100 V common-mode voltage range, 4.5 A peak source/sink current, active Miller clamp (5 A sink), and adjustable negative charge pump for V_OFF. It enables robust high-frequency switching in half-bridge DC-DC converters and resonant wireless power systems.

For engineers reviewing the 1EDN7136GXTMA1 datasheet, 1EDN7136GXTMA1 pinout, 1EDN7136GXTMA1 application, or 1EDN7136GXTMA1 equivalent, this page delivers verified technical context, validated pin functions, real-world use cases for GaN-based topologies, and confirmed alternative drivers with documented functional distinctions.

Technical Context

The 1EDN7136GXTMA1 implements a fully differential input architecture that rejects common-mode transients up to ±100 V at >50 V/ns, eliminating ground-bounce-induced false triggering in both high-side and low-side configurations. Its TDI stage uses matched external resistors (33 kΩ for 3.3 V logic) and internal Schmitt-triggered amplification to ensure noise-immune signal propagation.

It integrates an active bootstrap clamp to prevent overcharging during dead-time, a dedicated 5 A Miller clamp output (OUT_SNK) to suppress dV/dt-induced turn-on, and an adjustable charge pump (via VOFF_ADJ resistor) to generate programmable negative turn-off voltage - critical for GaN HEMT reliability under fast switching.

Key Specifications

Parameter	Value and Actual Design Meaning
Peak Output Current	4.5 A source/sink - drives GaN gates with minimal external resistance, enabling <10 ns rise/fall times.
Common-Mode Range	±100 V - supports direct high-side placement in 600 V-class half-bridges without level-shifting isolators.
Input Logic Compatibility	3.3 V or 5 V - configured via external 33 kΩ or 68 kΩ input resistors on IN+ and IN−.
Miller Clamp Sink	5 A - actively pulls gate below threshold during high dV/dt events, preventing spurious conduction in GaN devices.
Charge Pump Adjustability	V_OFF set by resistor from VOFF_ADJ to VSS - enables −1 V to −5 V negative turn-off bias for enhanced noise immunity.
UVLO Thresholds	VDD UVLO: 3.95 V (rising), 3.7 V (falling); charge pump UVLO latches after power-up - prevents linear-mode operation and ensures safe startup.

Pinout & Package

1EDN7136GXTMA1 is housed in a thermally enhanced PG-VSON-8 (3.0 × 3.0 mm², 0.5 mm pitch) package with exposed thermal pad (VSS-connected) for efficient heat dissipation in high-power density designs.

Pin/Terminal	Circuit Role	Design Meaning
IN+	Differential input positive	Receives scaled PWM signal; paired with IN− to reject common-mode noise up to ±100 V.
IN−	Differential input negative	Reference for IN+; requires matched external resistor to maintain TDI accuracy and CMR integrity.
OUT_SRC	Gate pull-up output	Drives gate high to VDD with 4.5 A capability; directly connects to GaN/Si MOSFET gate.
OUT_SNK	Active Miller clamp output	Sinks 5 A to V_OFF during switching transitions to suppress dV/dt-induced turn-on.
BST	Bootstrap diode anode node	Provides floating supply for high-side operation when used in half-bridge; connects to external bootstrap diode/capacitor.
VDD	Primary gate drive supply	12–20 V input powering logic and output stages; includes UVLO monitoring at 3.7–3.95 V.
VOFF_ADJ	Charge pump adjustment	Resistor-to-VSS sets negative rail voltage (−1 V to −5 V) for enhanced GaN turn-off margin.
VSS	Power/thermal return	Ground reference for VDD and thermal pad; must be low-inductance connection for stable operation.
CF+	Charge pump capacitor positive	Connects to flying capacitor's high-side terminal; forms adjustable negative voltage generator.
CF−	Charge pump capacitor negative	Connects to flying capacitor's low-side terminal; completes charge pump loop with CF+ and VOFF_ADJ.

Key Features

Feature	Design Value
Truly Differential Input (TDI)	Rejects ±100 V static and dynamic common-mode voltage without isolators - enables direct high-side integration in 600 V systems.
Active Bootstrap Clamp	Prevents bootstrap capacitor overvoltage during dead-time - eliminates need for Zener clamps and improves reliability in high-duty-cycle operation.
5 A Miller Clamp	Strong active pull-down during high dV/dt events - suppresses false turn-on in GaN HEMTs with sub-ns switching edges.
Adjustable Negative Turn-Off	V_OFF programmable from −1 V to −5 V via external resistor - increases noise margin beyond standard 0 V turn-off.
Input Pulse Blanking	70 ns minimum pulse width - filters out noise spikes while preserving control fidelity for PWM frequencies up to 2 MHz.

Applications

DC-DC Converter

Class-D Resonant Wireless Power

Use Scenario: High-efficiency 48 V–12 V isolated buck-boost converter using GaN half-bridge in primary side.

IC Role / Device Role / Timing Role: High-side gate driver providing synchronized, noise-immune gate control with active Miller clamp to prevent shoot-through during MHz-level switching.

Use Value: Enables >98% efficiency at 1 MHz with CoolGaN HEMTs by eliminating false triggering and ensuring clean turn-off via adjustable V_OFF.

Use Scenario: 15 W Qi-compliant resonant transmitter operating at 125–205 kHz with GaN-based full-bridge inverter.

IC Role / Device Role / Timing Role: Single-channel driver controlling upper switch in asymmetrical half-bridge topology, leveraging TDI for EMI-resilient control under variable coupling conditions.

Use Value: Maintains stable zero-voltage switching (ZVS) across coil misalignment by rejecting common-mode noise from adjacent power stages and PCB traces.

Synchronous Rectifier

BLDC Motor Drive

Use Scenario: Secondary-side synchronous rectification in LLC resonant converter using CoolGaN HEMT for ultra-low Q_g switching.

IC Role / Device Role / Timing Role: Low-side driver with TDI input and active bootstrap clamp, enabling precise timing alignment with primary-side controller despite ground bounce.

Use Value: Reduces conduction losses by 35% vs. Si MOSFETs while maintaining <10 ns gate delay matching for optimal ZVS/ZCS boundary control.

Use Scenario: 3-phase BLDC inverter for industrial fans, using GaN half-bridges per phase driven by three 1EDN7136GXTMA1 units.

IC Role / Device Role / Timing Role: High-side gate driver delivering fast, isolated gate control with integrated Miller clamp to prevent commutation errors during rapid load transients.

Use Value: Supports 100 kHz PWM with <50 ns propagation delay variation across temperature, enabling field-oriented control (FOC) stability at >30,000 RPM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side GaN gate driving applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
UCC27611DR	Single-channel, 6 A peak current, but lacks TDI architecture and adjustable V_OFF; relies on external level shifters for high-side use.	Requires isolated gate drive or level-shifting circuitry for high-side GaN operation - adds BOM cost and layout complexity.	Select when system already uses digital isolators and prioritizes higher peak current over integrated noise immunity.
LM5113MTX/NOPB	High-side-only driver with bootstrap, no differential input; 4 A peak, fixed −2 V turn-off, no charge pump adjustability.	Limited to fixed negative rail; less effective against dV/dt-induced turn-on in fast GaN switching above 500 kHz.	Select for cost-sensitive Si MOSFET half-bridges where adjustable V_OFF and TDI are not required.

Compared with UCC27611DR and LM5113MTX/NOPB, 1EDN7136GXTMA1 uniquely integrates TDI, programmable V_OFF, and 5 A Miller clamp - reducing component count, improving noise resilience, and enabling reliable GaN operation at >1 MHz without external isolation or clamping components.

Availability

1EDN7136GXTMA1 is available at Aetrix Electronics and suitable for DC-DC converters, Class-D resonant wireless power transmitters, and BLDC motor drives requiring stable component supply, long-term lifecycle support, and traceable GaN-optimized gate drive performance.

Supply support for 1EDN7136GXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and wide-bandgap solutions, with global R&D and manufacturing infrastructure supporting industrial and automotive-grade reliability.

The EiceDRIVER™ portfolio targets high-efficiency power conversion systems using Si, SiC, and GaN transistors - designed specifically to overcome gate-drive challenges like Miller-induced turn-on, bootstrap instability, and common-mode noise in MHz-switching topologies.

FAQ

What is the purpose of the VOFF_ADJ pin?

The VOFF_ADJ pin sets the negative turn-off voltage (V_OFF) via an external resistor to VSS. This resistor determines the charge pump output level between −1 V and −5 V, enhancing immunity to dV/dt-induced false turn-on in GaN HEMTs. The value is selected based on target V_OFF and specified in Infineon's application note AN2022-05.

Can 1EDN7136GXTMA1 drive SiC MOSFETs?

Yes - though optimized for GaN SG HEMTs, its 4.5 A drive strength, 100 V CMR, and active Miller clamp make it compatible with discrete SiC MOSFETs requiring fast, noise-immune gate control. However, gate threshold voltage and Q_g differences may require validation of timing margins and V_OFF settings in the target application.

How does the TDI architecture eliminate ground bounce issues?

The TDI architecture compares only the voltage difference between IN+ and IN−, rejecting common-mode shifts up to ±100 V. With matched 33 kΩ input resistors, ground bounce on the controller side appears equally on both inputs and cancels out - ensuring output state depends solely on the intended PWM differential signal, not local ground fluctuations.

Is an external bootstrap diode required for half-bridge operation?

Yes - the BST pin serves as the anode connection point for an external bootstrap diode (e.g., BAS21DW). This diode charges the bootstrap capacitor during low-side conduction, enabling high-side drive. Infineon recommends a fast-switching, low-leakage diode with <100 ns reverse recovery time to maintain voltage stability during dead-time.

1EDN7136GXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: EiceDRIVER™

Package/Case:: 10-VFDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Driven Configuration:: High-Side or Low-Side

Channel Type:: Independent

Number of Drivers:: 1

Gate Type:: N-Channel MOSFET

Voltage - Supply:: 4.2V ~ 11V

Logic Voltage - VIL, VIH:: -

Current - Peak Output (Source, Sink):: 1A, 1A

Input Type:: Non-Inverting

High Side Voltage - Max (Bootstrap):: -

Rise / Fall Time (Typ):: 5.5ns, 5.5ns

Operating Temperature:: -40°C ~ 125°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-VSON-10-4

1EDN7136GXTMA1 FAQ

1.How can I place an order for 1EDN7136GXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1EDN7136GXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1EDN7136GXTMA1 reliable?

The price and inventory of 1EDN7136GXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1EDN7136GXTMA1 is usually 5 days.

3.What payment methods are accepted for 1EDN7136GXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1EDN7136GXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1EDN7136GXTMA1?

1EDN7136GXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1EDN7136GXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1EDN7136GXTMA1?

For technical support, including 1EDN7136GXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1EDN7136GXTMA1 requirements.

6.How does Aetrix verify that 1EDN7136GXTMA1 is sourced from the original manufacturer or authorized distributors?

All 1EDN7136GXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1EDN7136GXTMA1 meets industry standards.

7.What is the process for return or replacement of 1EDN7136GXTMA1?

All 1EDN7136GXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 1EDN7136GXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1EDN7136GXTMA1 part is unused and in its original packaging.

Return procedure for 1EDN7136GXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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