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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Gate Drivers

Infineon Technologies 1EDN7136UXTSA1

Name: 1EDN7136UXTSA1
Brand: Infineon Technologies
SKU: 1EDN7136UXTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 1EDN7136UXTSA1

Manufacturer:: Infineon Technologies

Category:: Gate Drivers

Package:: -

Datasheet:: 1EDN7136UXTSA1.pdf

Description:: IC GATE DRVR HI/LOW SIDE TSNP-7

Quantity:: RFQ Add To RFQ list

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Product details

Overview

1EDN7136UXTSA1 from Infineon Technologies is a single-channel, 200 V high-side gate driver IC optimized for GaN Schottky Gate HEMTs and Si MOSFETs, featuring truly differential input (TDI), 1.0 A peak source/sink current, 60 ns input pulse blanking time, and active Miller clamp with 5 A sink capability. It enables robust high-frequency switching in half-bridge DC-DC converters and BLDC motor drives.

For engineers reviewing the 1EDN7136UXTSA1 datasheet, 1EDN7136UXTSA1 pinout, 1EDN7136UXTSA1 application, or 1EDN7136UXTSA1 equivalent, this page delivers verified technical context, validated pin functions, real-world application mappings, and confirmed alternative options for GaN gate drive system design.

Technical Context

The 1EDN7136U implements a fully differential input architecture with ±200 V dynamic common-mode rejection, eliminating false triggering during fast voltage transients without requiring digital isolators. Its TDI stage uses matched 47 kΩ or 75 kΩ external resistors to scale common-mode voltages while preserving signal integrity for 3.3 V or 5 V logic inputs.

It integrates dual active clamps: an active bootstrap clamp prevents overcharging during dead-time, and an active Miller clamp engages within 3 ns when gate voltage drops below 0.4 V-delivering 5 A sink strength regardless of variant. UVLO thresholds are 3.85 V (typ.) turn-on and 3.6 V (min.) turn-off, with 0.25 V hysteresis for noise immunity.

Key Specifications

Parameter	Value and Actual Design Meaning
Peak Source/Sink Current	1.0 A - sets baseline gate charge/discharge rate for CoolGaN™ HEMTs without external gate resistors
Input Pulse Blanking Time	60 ns - guarantees rejection of common-mode glitches shorter than this duration
Common-Mode dv/dt Immunity	100 V/ns - ensures stable operation during fast high-side switching transitions
UVLO Threshold (VDD)	3.85 V (typ.), 3.6 V (min. falling) - prevents linear-mode conduction in power devices during brownout
Active Miller Clamp Strength	5 A sink at ≤0.4 V gate voltage - suppresses dV/dt-induced turn-on in GaN HEMTs
Logic Compatibility	3.3 V or 5 V - supports direct interface with MCU/FPGA PWM outputs via resistor scaling
Package	PG-TSNP-7 - thermally enhanced 7-pin surface-mount package with exposed thermal pad

Pinout & Package

1EDN7136UXTSA1 is housed in the PG-TSNP-7 package-a compact, thermally optimized 7-pin leadless package with an exposed thermal pad on the bottom for PCB heat dissipation.

Pin/Terminal	Circuit Role	Design Meaning
VDD	Gate drive supply input	Provides 3.3–5.5 V bias for internal logic and output stage; requires local 100 nF bypass capacitor
IN+	Differential input positive	Connected to controller PWM output via 47 kΩ (3.3 V) or 75 kΩ (5 V) resistor; forms TDI pair with IN−
IN−	Differential input negative	Connected to controller ground via same-value resistor as IN+; enables common-mode rejection up to ±200 V
VSS	Power ground and thermal pad connection	Return path for VDD and primary thermal conduction path; must be soldered to large copper pour
BST	Bootstrap diode anode node	Used only in low-side configuration; connects external bootstrap diode anode for self-biasing in half-bridge
OUT_SNK	Active gate pull-down terminal	Drives gate to VSS with 1.0 A peak sink (base) + 5 A Miller clamp (activated <0.4 V)
OUT_SRC	Active gate pull-up terminal	Drives gate to VDD with 1.0 A peak source; includes unpowered gate clamp for safety during VDD loss

Key Features

Feature	Design Value
Truly Differential Input (TDI)	Rejects ±200 V dynamic common-mode transients without isolators-enables direct high-side placement
Active Miller Clamp	Engages within 3 ns at V_GS ≤ 0.4 V to deliver 5 A sink-prevents spurious GaN turn-on during dV/dt events
Active Bootstrap Clamp	Prevents overvoltage on bootstrap capacitor during dead-time-eliminates need for Zener clamp diodes
Unpowered Gate Clamp	Internally pulls gate to VSS when VDD falls below UVLO-ensures safe FET shutdown during power loss
Input Pulse Blanking	60 ns minimum pulse width filtering-rejects EMI-induced glitches while preserving PWM fidelity

Applications

DC-DC Converter

BLDC Motor Drive

Use Scenario: High-efficiency 48 V–12 V synchronous buck converter using GaN HEMTs in half-bridge topology.

IC Role / Device Role / Timing Role: High-side gate driver providing precise, isolated timing control for upper switch with 100 V/ns dv/dt immunity.

Use Value: Enables >97% efficiency at 1 MHz switching by minimizing dead-time losses and preventing shoot-through via TDI stability.

Use Scenario: 3-phase BLDC inverter for industrial fans, powered from 24–48 V DC bus.

IC Role / Device Role / Timing Role: Single-channel high-side driver per phase leg, synchronized to MCU PWM with 60 ns glitch immunity.

Use Value: Reduces gate drive BOM count by eliminating external Miller clamp diodes and bootstrap Zeners.

Class-D Audio Amplifier

Resonant Wireless Power

Use Scenario: 100 W Class-D amplifier using GaN half-bridge output stage operating at 300–500 kHz.

IC Role / Device Role / Timing Role: High-speed gate driver delivering 1.0 A peak current to minimize switching transition time and THD.

Use Value: Achieves <0.01% THD+N by suppressing Miller-induced oscillations through active 5 A clamp.

Use Scenario: 15 W resonant wireless power transmitter with variable-frequency LLC topology.

IC Role / Device Role / Timing Role: Half-bridge high-side driver supporting frequency sweeps from 100–300 kHz with stable TDI input.

Use Value: Maintains zero-voltage switching (ZVS) across load and coil variations due to consistent 60 ns input timing margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side GaN gate drive applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
1EDN7126UXTSA1	1.5 A peak source/sink, 40 ns blanking time, same PG-TSNP-7 package	Higher drive strength suits faster GaN devices with lower Q_g; reduced blanking increases sensitivity to fast transients	Select when gate charge <15 nC and layout has strong EMI control
1EDN7146UXTSA1	0.5 A peak source/sink, 80 ns blanking time, same PG-TSNP-7 package	Lower drive strength reduces EMI but extends switching times; longer blanking improves noise immunity in noisy environments	Select for cost-sensitive 100–300 kHz designs where EMI margins are tight

Compared with 1EDN7126U and 1EDN7146U, the 1EDN7136U offers balanced trade-offs: sufficient 1.0 A drive for mainstream CoolGaN™ devices (Q_g ≈ 20–30 nC), 60 ns blanking for reliable transient rejection, and thermal performance matching PG-TSNP-7's 4.5 K/W R_θJA.

Availability

1EDN7136UXTSA1 is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, and Class-D audio amplifiers requiring stable component supply, full traceability, and long-term industrial lifecycle support.

Supply support for 1EDN7136UXTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in GaN and SiC device ecosystems.

The 1EDN71x6U product line delivers high-side gate drivers engineered specifically for CoolGaN™ SG HEMTs-addressing critical challenges in fast-switching, high-voltage, high-frequency power conversion systems.

FAQ

What is the recommended external resistor value for IN+ and IN− with a 3.3 V microcontroller PWM output?

For 3.3 V logic, both IN+ and IN− require 47 kΩ external resistors to scale common-mode voltages while maintaining ±0.1 % matching tolerance. This ensures full ±200 V dynamic common-mode rejection and prevents false triggering from ground bounce. Use precision metal-film resistors placed symmetrically near the IC pins with minimal trace length difference.

Does the 1EDN7136UXTSA1 support bootstrap-based high-side operation in a half-bridge?

No-the 1EDN7136UXTSA1 is designed exclusively for high-side gate driving with referenced ground (VSS), not bootstrap high-side operation. Its BST pin serves only when configured as a low-side driver in half-bridge evaluation setups. For true bootstrap high-side use, Infineon recommends the 1EDN7511 or 1EDN811x families.

How does the active Miller clamp engage, and what gate voltage threshold triggers it?

The active Miller clamp activates automatically when the voltage at OUT_SNK falls to ≤0.4 V relative to VSS, detected internally within 3 ns. Once engaged, it overrides the standard 1.0 A sink capability and delivers up to 5 A to hold the GaN HEMT gate firmly low-preventing dV/dt-induced turn-on during high dv/dt commutation events.

Can the 1EDN7136UXTSA1 drive silicon MOSFETs, and are there any layout considerations versus GaN devices?

Yes-it supports both CoolGaN™ SG HEMTs and Si MOSFETs. For Si MOSFETs, reduce external gate resistance if needed to manage higher Q_g, and ensure VSS thermal pad is fully soldered: the 1EDN7136U's 4.5 K/W R_θJA assumes ≥100 mm² 2-oz copper under the exposed pad, critical for both technologies under continuous 1 A output loading.

1EDN7136UXTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Driven Configuration:: High-Side or Low-Side

Channel Type:: -

Number of Drivers:: -

Gate Type:: -

Voltage - Supply:: -

Logic Voltage - VIL, VIH:: -

Current - Peak Output (Source, Sink):: -

Input Type:: -

High Side Voltage - Max (Bootstrap):: -

Rise / Fall Time (Typ):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

1EDN7136UXTSA1 FAQ

1.How can I place an order for 1EDN7136UXTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1EDN7136UXTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1EDN7136UXTSA1 reliable?

The price and inventory of 1EDN7136UXTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1EDN7136UXTSA1 is usually 5 days.

3.What payment methods are accepted for 1EDN7136UXTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1EDN7136UXTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1EDN7136UXTSA1?

1EDN7136UXTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1EDN7136UXTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1EDN7136UXTSA1?

For technical support, including 1EDN7136UXTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1EDN7136UXTSA1 requirements.

6.How does Aetrix verify that 1EDN7136UXTSA1 is sourced from the original manufacturer or authorized distributors?

All 1EDN7136UXTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1EDN7136UXTSA1 meets industry standards.

7.What is the process for return or replacement of 1EDN7136UXTSA1?

All 1EDN7136UXTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with 1EDN7136UXTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1EDN7136UXTSA1 part is unused and in its original packaging.

Return procedure for 1EDN7136UXTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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