Infineon Technologies 1EDN7146GXTMA1

Overview

1EDN7146GXTMA1 from Infineon is a single-channel, 100 V high-side gate driver IC optimized for GaN Schottky Gate HEMTs and Si MOSFETs, featuring Truly Differential Input (TDI), ±100 V common-mode input range, 4 A peak source/sink current, active Miller clamp (5 A sink), and adjustable negative charge pump for V_OFF. It enables robust high-frequency switching in half-bridge DC-DC converters and Class-D resonant wireless power systems.

For engineers reviewing the 1EDN7146GXTMA1 datasheet, 1EDN7146GXTMA1 pinout, 1EDN7146GXTMA1 application, or 1EDN7146GXTMA1 equivalent, this page delivers verified technical context, validated pin functions, real-world application mappings, and confirmed alternative parts with documented functional differences - all grounded in Infineon's official Rev. 1.2 datasheet (Order Number: 1EDN7146GXTMA1).

Technical Context

The 1EDN7146GXTMA1 implements a fully differential amplifier + Schmitt-trigger input stage that rejects common-mode transients up to ±100 V at >50 V/ns, enabling direct high-side operation without isolators. Its TDI architecture uses matched external resistors (33 kΩ for 3.3 V logic, 68 kΩ for 5 V logic) to scale input common-mode voltage while preserving differential signal integrity.

Internally, it integrates an adjustable charge pump (set via VOFF_ADJ resistor) to generate programmable negative turn-off voltage (–2 V to –5 V), an active bootstrap clamp preventing overvoltage during dead-time, and a dedicated 5 A Miller clamp on OUT_SNK to suppress dV/dt-induced false turn-on in GaN devices.

Key Specifications

Pinout & Package

1EDN7146GXTMA1 is housed in a thermally enhanced PG-VSON-8 (3.0 mm × 3.0 mm, 0.5 mm pitch) package with exposed thermal pad (VSS-connected) for low-θ_JA performance in high-power density layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side GaN gate driver applications.

Compared with 1EDN7151BXTMA1 and UCC27611DR, the 1EDN7146GXTMA1 uniquely combines 4 A drive, on-chip 5 A Miller clamp, and resistor-programmable V_OFF - delivering higher integration, lower system-level component count, and superior GaN-specific reliability without sacrificing layout flexibility.

Availability

1EDN7146GXTMA1 is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, resonant wireless power transmitters, and BLDC motor inverters requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for 1EDN7146GXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and wide-bandgap solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This device belongs to the EiceDRIVER™ family of gate drivers engineered specifically for GaN and SiC power devices - emphasizing noise immunity, integrated protection, and simplified high-speed system design.

FAQ

What logic voltage levels does the 1EDN7146GXTMA1 support?

The 1EDN7146GXTMA1 supports both 3.3 V and 5 V input logic levels. For 3.3 V systems, 33 kΩ resistors are used on IN+ and IN−; for 5 V systems, 68 kΩ resistors are required. These values scale the ±100 V common-mode input down to safe CMOS-compatible levels while maintaining tight matching (±0.1 % tolerance) to preserve differential accuracy and noise rejection.

How is the negative turn-off voltage (V_OFF) configured?

V_OFF is set by connecting a resistor between VOFF_ADJ and VSS. The value determines the charge pump output: 10 kΩ yields –2 V, 4.7 kΩ yields –3 V, and 2.2 kΩ yields –5 V (per Infineon's design table). This negative rail enhances immunity to dV/dt-induced turn-on and improves gate drive stability in high-noise GaN applications.

Does the 1EDN7146GXTMA1 require external gate resistors?

No external gate resistors are required for basic operation due to its four internal drive strength options - 1EDN7146GXTMA1 provides 4 A peak source/sink current. However, fine-tuning of switching speed or EMI may still use small series resistors (e.g., 1–5 Ω) on OUT_SRC/OUT_SNK, especially when driving large gate capacitances (>5 nF) or in ultra-low-noise environments.

Can the 1EDN7146GXTMA1 be used in low-side configuration?

Yes - the Truly Differential Input architecture ensures robust operation in low-side mode by rejecting ground bounce up to ±100 V. In this configuration, IN− connects to controller ground, IN+ receives the PWM signal, and BST remains unconnected. The active Miller clamp and UVLO protections remain fully functional, making it suitable for synchronous rectifiers and single-ended topologies.