Infineon Technologies 1EDN7146UXTSA1

Overview

1EDN7146UXTSA1 from Infineon Technologies is a single-channel, 200 V high-side gate driver IC optimized for GaN Schottky Gate HEMTs and Si MOSFETs, featuring truly differential input (TDI), 0.5 A peak source/sink current, 80 ns input pulse blanking time, active Miller clamp (5 A sink), and PG-TSNP-7 package; used in synchronous rectifiers and resonant wireless power systems.

For engineers reviewing the 1EDN7146UXTSA1 datasheet, 1EDN7146UXTSA1 pinout, 1EDN7146UXTSA1 application, or 1EDN7146UXTSA1 equivalent, this page delivers verified technical context, validated pin functions, real-world switching performance trade-offs, and industrial-grade supply chain support - all grounded in Infineon's Rev. 2.0 datasheet (2022-07-20).

Technical Context

The 1EDN7146UXTSA1 implements a fully differential input architecture with ±200 V dynamic common-mode rejection, enabling robust high-side operation without digital isolators. Its TDI circuit uses matched 75 kΩ external resistors for 5 V logic and relies on internal Schmitt-trigger evaluation to reject ground bounce and fast transients.

It integrates an active bootstrap clamp to prevent overcharging during dead-time and an active Miller clamp that engages within 3 ns when gate voltage falls below 0.4 V - delivering 5 A sink capability regardless of variant, ensuring reliable turn-off immunity for GaN devices under high dV/dt conditions.

Key Specifications

Pinout & Package

1EDN7146UXTSA1 is housed in Infineon's PG-TSNP-7 package: a 2.1 mm × 1.6 mm, 0.5 mm pitch, leadless surface-mount package with exposed thermal pad connected to VSS for enhanced thermal dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side GaN gate driver applications.

Compared with 1EDN7126UXTSA1, the 1EDN7146UXTSA1 trades lower drive strength and longer blanking for improved noise immunity and reduced EMI in resonant topologies; versus UCC27611DR, it eliminates external isolation components but offers less peak current and narrower logic voltage flexibility.

Availability

1EDN7146UXTSA1 is available at Aetrix Electronics and suitable for synchronous rectifiers, Class-E wireless power transmitters, half-bridge DC-DC converters, and BLDC motor drives requiring stable component supply across industrial temperature ranges (−40 °C to +125 °C).

Supply support for 1EDN7146UXTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The 1EDN71x6U product line delivers EiceDRIVER™ gate drivers engineered specifically for GaN Schottky Gate HEMTs - emphasizing high dV/dt immunity, integrated protection, and simplified high-side integration in resonant and high-efficiency power conversion.

FAQ

What is the recommended external resistor value for 5 V logic input?

For 5 V logic compatibility, two matched 75 kΩ resistors (±0.1% tolerance) must be placed between the controller PWM output and IN+, and between controller ground and IN−. This scaling ensures the TDI inputs remain within safe CMOS voltage limits while preserving full ±200 V common-mode rejection capability per Infineon's Rev. 2.0 datasheet Section 2.2.

Does 1EDN7146UXTSA1 support high-side operation without an isolator?

Yes - its Truly Differential Input (TDI) architecture provides ±200 V dynamic common-mode rejection, allowing direct high-side connection in half-bridge configurations without optical or magnetic isolators. The design relies on matched external resistors and proper PCB layout to maintain CMR integrity, as confirmed in Figure 3 and Section 2.2 of the official datasheet.

How does the active Miller clamp function during turn-off?

The active Miller clamp activates within 3 ns when the OUT_SNK voltage drops below 0.4 V, overriding the standard 0.5 A sink path to deliver up to 5 A of gate discharge current. This prevents dv/dt-induced turn-on in GaN HEMTs by rapidly pulling the gate below threshold during high dV/dt transitions, a behavior verified in Section 2.6 and Figure 2 of the Infineon datasheet.

Can 1EDN7146UXTSA1 be used in low-side configurations?

Yes - the TDI architecture provides inherent ground-bounce immunity in low-side applications, eliminating false triggering during fast GaN switching. The device operates identically in low-side mode, with IN+ and IN− referenced to controller ground, and OUT_SRC/OUT_SNK driving the MOSFET/GaN gate directly, as shown in Figure 2 of the datasheet.