Infineon Technologies 1EDN7511BXTSA1

Overview

1EDN7511BXTSA1 from Infineon Technologies is a single-channel low-side gate driver IC with separated source/sink outputs, designed to drive logic-level MOSFETs (e.g., OptiMOS™) and GaN HEMTs in high-frequency switching applications. It delivers 4 A source / 8 A sink peak output current, features 19 ns typical propagation delay, ±6/–4 ns delay accuracy, and operates with 4.2 V/3.9 V UVLO thresholds.

For engineers reviewing the 1EDN7511BXTSA1 datasheet, 1EDN7511BXTSA1 pinout, 1EDN7511BXTSA1 application, or 1EDN7511BXTSA1 equivalent, key selection criteria include asymmetric drive strength for half-bridge brake-before-make timing, –10 V input voltage robustness against ground shift, and SOT23-6 package compatibility with industry-standard PCB layouts.

Technical Context

This driver implements a rail-to-rail complementary MOS output stage with discrete p-channel (source) and n-channel (sink) transistors-enabling true 0 V to VDD swing without source-follower voltage drop. The separated OUT_SRC and OUT_SNK terminals allow independent gate resistor control for optimized turn-on/turn-off timing.

Input logic uses internal pull-down on IN+ and pull-up on IN−, ensuring defined low-output state during power-up, floating inputs, or UVLO activation. Input hysteresis is fixed at 1.1 V across 4.5–20 V supply range, and input pins tolerate –10 V, preventing cross-current during controller–driver ground differential transients.

Key Specifications

Pinout & Package

1EDN7511BXTSA1 is housed in PG-SOT23-6-2, a leaded 6-pin surface-mount package with standard footprint and thermal pad-less construction. Pin 1 is VDD; pin 4 is GND; pins 2 and 3 are dedicated output terminals (OUT_SRC, OUT_SNK); pins 5 and 6 are logic inputs (IN−, IN+).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with 1EDN7512BXTSA1 and UCC27517DBVR, the 1EDN7511BXTSA1 uniquely combines separated source/sink outputs, –10 V input tolerance, and JEDEC-qualified industrial reliability-making it the only choice for robust half-bridge control in EV chargers and solar inverters.

Availability

1EDN7511BXTSA1 is available at Aetrix Electronics and suitable for switch-mode power supplies, solar micro-inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for 1EDN7511BXTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The EiceDRIVER™ 1EDN751x family targets high-reliability, high-frequency gate driving in industrial and renewable energy systems-designed specifically for logic-level MOSFETs and GaN devices where timing precision and fault resilience are critical.

FAQ

What is the purpose of separated OUT_SRC and OUT_SNK pins in 1EDN7511BXTSA1?

The separated source and sink outputs enable independent gate resistor placement-allowing precise control of MOSFET turn-on (via Rg_ON on OUT_SRC) and turn-off (via Rg_OFF on OUT_SNK). This asymmetry supports "brake-before-make" timing essential for preventing shoot-through in half-bridge configurations, and improves EMI by tailoring dV/dt independently for each edge.

Does 1EDN7511BXTSA1 require external bootstrap components?

No. 1EDN7511BXTSA1 is a low-side-only gate driver and does not require bootstrap capacitors or high-side level-shifting circuitry. It operates from a single 4.5–20 V supply referenced to system ground, with all logic and output stages tied to that same ground plane-simplifying layout and reducing BOM count in low-side switch applications.

How does the –10 V input voltage rating improve system reliability?

The –10 V input rating allows IN+ and IN− pins to safely withstand negative voltage transients caused by ground potential differences between controller and driver ICs-common in high-current power stages with shared but inductively coupled ground paths. This eliminates need for external Schottky clamps and prevents false triggering or latch-up during load dump or inductive kick events.

Can 1EDN7511BXTSA1 drive GaN HEMTs effectively?

Yes. Its 4 A source / 8 A sink capability, <0.35 Ω sink impedance, and 19 ns propagation delay meet the fast switching and low gate charge requirements of enhancement-mode GaN HEMTs. The rail-to-rail output ensures full VDD gate drive-critical for achieving specified RDS(on) and minimizing dynamic losses in GaN-based totem-pole PFC and high-frequency DC–DC converters.