Infineon Technologies 1EDN7511BXUSA1

Overview

1EDN7511BXUSA1 from Infineon Technologies is a single-channel low-side gate driver IC with separated source/sink outputs in PG-SOT23-6-2 package, delivering 4 A source / 8 A sink peak current, 19 ns typical propagation delay, ±6/–4 ns delay accuracy, and 4.2 V/3.9 V UVLO thresholds-designed to drive logic-level MOSFETs (e.g., OptiMOS™) and GaN HEMTs in high-efficiency SMPS half-bridge stages.

For engineers reviewing the 1EDN7511BXUSA1 datasheet, 1EDN7511BXUSA1 pinout, 1EDN7511BXUSA1 application, or 1EDN7511BXUSA1 equivalent, key selection factors include its rail-to-rail asymmetrical output stage, -10 V input voltage robustness, 5 A reverse current tolerance, industry-standard SOT23-6 pinout, and suitability for fast-switching power converters requiring precise turn-off timing.

Technical Context

This driver implements a dual-output complementary MOS rail-to-rail stage with independent OUT_SRC and OUT_SNK terminals, enabling true "brake-before-make" switching essential for half-bridge shoot-through prevention. Its internal pull-down on IN+ and pull-up on IN− ensure fail-safe off-state during power-up or floating control signals.

The device integrates active UVLO with hysteresis (typ. 0.3 V), operates from 4.5 V to 20 V supply, and maintains 1.1 V input hysteresis independent of VDD. Input pins tolerate –10 V, eliminating cross-current risk during ground shift events between controller and driver domains.

Key Specifications

Pinout & Package

1EDN7511BXUSA1 is housed in PG-SOT23-6-2-a leaded, surface-mount package with 0.95 mm pitch, JEDEC-compliant footprint, and thermal pad not present. It supports reflow soldering per J-STD-020 and qualifies for industrial temperature range (–40 °C to +125 °C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with 1EDN7511BXUSA1, 1EDN7512B trades pin separation for smaller footprint but sacrifices intrinsic timing asymmetry, while UCC27517DBV offers lower delay but lacks critical robustness features-making the 1EDN7511BXUSA1 optimal for isolated, high-reliability, fast-switching power stages.

Availability

1EDN7511BXUSA1 is available at Aetrix Electronics and suitable for switch-mode power supplies (SMPS), solar micro-inverters, and EV off-board chargers requiring stable component supply, long-term lifecycle support, and industrial-grade reliability.

Supply support for 1EDN7511BXUSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

The EiceDRIVER™ 1EDN751x family targets high-frequency, high-efficiency power conversion systems-designed specifically for low-side driving of logic-level MOSFETs and GaN devices in SMPS, PFC, and motor inverter applications.

FAQ

What is the function of the separated OUT_SRC and OUT_SNK pins?

The separated OUT_SRC and OUT_SNK pins provide independent high-side and low-side gate drive paths within a single low-side driver. This architecture enables true "brake-before-make" switching-ensuring the MOSFET gate is actively pulled low before being driven high-which prevents shoot-through in half-bridge configurations without external timing circuitry or gate resistors.

Does 1EDN7511BXUSA1 require external pull-up or pull-down resistors on IN+ and IN−?

No. The IN+ pin has an internal pull-down resistor (~100 kΩ), and the IN− pin has an internal pull-up resistor (~100 kΩ). These ensure a defined logic-low output state during power-up, MCU reset, or open-circuit conditions-eliminating the need for external biasing components and reducing BOM count and layout complexity.

Can 1EDN7511BXUSA1 drive GaN HEMTs effectively?

Yes. Its 4 A source / 8 A sink capability, 19 ns propagation delay, and rail-to-rail output stage deliver fast, low-impedance gate control ideal for enhancement-mode GaN HEMTs. The –10 V input tolerance also supports robust interface with GaN-specific controllers experiencing ground bounce during high di/dt switching.

How does the 4.2 V/3.9 V UVLO protect the power stage?

The UVLO monitors VDD and disables both outputs when voltage drops below 3.9 V (typ.), re-enabling only after rising above 4.2 V (typ.). This hysteresis prevents oscillation near threshold and ensures MOSFETs remain fully enhanced or fully off-avoiding linear-mode operation that causes excessive conduction loss and thermal stress during brown-out or startup.