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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Gate Drivers

Infineon Technologies 1EDN7512GXTMA1

Name: 1EDN7512GXTMA1
Brand: Infineon Technologies
SKU: 1EDN7512GXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 1EDN7512GXTMA1

Manufacturer:: Infineon Technologies

Category:: Gate Drivers

Package:: 6-WDFN Exposed Pad

Datasheet:: 1EDN7512GXTMA1.pdf

Description:: IC GATE DRVR LOW-SIDE 6WSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

1EDN7512GXTMA1 from Infineon Technologies is a single-channel low-side gate driver IC with common-source/sink output configuration, 4 A source / 8 A sink peak current capability, 19 ns typical propagation delay, ±6/–4 ns delay accuracy, and 4.2 V/3.9 V UVLO threshold-designed to drive logic-level MOSFETs and GaN HEMTs in high-efficiency DC-DC converters.

For engineers reviewing the 1EDN7512GXTMA1 datasheet, 1EDN7512GXTMA1 pinout, 1EDN7512GXTMA1 application, or 1EDN7512GXTMA1 equivalent, key selection criteria include output configuration (common OUT), WSON-6 package thermal performance, rail-to-rail drive strength asymmetry, negative input voltage robustness (–10 V), and UVLO hysteresis stability across supply range.

Technical Context

This driver implements a complementary MOS rail-to-rail output stage with discrete p-channel (source) and n-channel (sink) transistors-enabling true 0 V to VDD swing without source-follower voltage drop. Its "brake-before-make" timing behavior ensures safe half-bridge operation by guaranteeing faster turn-off (8 A sink) than turn-on (4 A source).

Input logic uses internal pull-down on IN+ and pull-up on IN−, delivering LV-TTL compatibility with 1.1 V hysteresis independent of VDD. The –10 V input tolerance prevents cross-current during ground shift events, while 5 A reverse current robustness protects against reflected energy from power-stage transients.

Key Specifications

Parameter	Value and Actual Design Meaning
Output Drive Strength	4 A source / 8 A sink peak-enables fast charging/discharging of large gate capacitances (e.g., >5 nF) with minimal switching loss.
Propagation Delay	19 ns typ.-supports >5 MHz switching frequencies in resonant topologies without timing-induced shoot-through risk.
UVLO Threshold	4.2 V ON / 3.9 V OFF-prevents MOSFET linear-mode operation during brown-out, ensuring gate remains fully off below safe VDD margin.
Input Voltage Range	–10 V to VDD + 0.3 V-tolerates severe ground bounce between controller and driver, eliminating need for external level-shifting or clamping.
Supply Voltage Range	4.5 V to 20 V-allows direct use with 12 V or 15 V bias rails while maintaining full output current capability up to 20 V.
Output Impedance	<0.85 Ω (source), <0.35 Ω (sink)-minimizes gate resistor dependency and enables precise control of dV/dt in GaN applications.

Pinout & Package

1EDN7512GXTMA1 is housed in a PG-WSON-6-1 leadless package (3 mm × 3 mm, 0.65 mm pitch) with exposed thermal pad requiring GND connection for optimal thermal dissipation and EMI suppression.

Pin/Terminal	Circuit Role	Design Meaning
1 IN+	Non-inverting logic input	Internally pulled down; high-to-low transition forces OUT low-ensures fail-safe off-state during MCU reset or open-circuit conditions.
2 & 5 GND	Power and signal reference	Dual GND pins reduce ground loop impedance; exposed pad must be soldered to PCB GND plane for <15 °C/W θ_JA.
3 VDD	Positive supply input	Accepts 4.5–20 V; powers internal logic and output stage-no external bootstrap required for low-side operation.
4 OUT	Common gate drive output	Rail-to-rail push-pull node driving MOSFET/GaN gate directly-no external diodes or resistors needed for basic operation.
6 IN−	Inverting logic input	Internally pulled up; low-to-high transition forces OUT low-complements IN+ for differential noise immunity in noisy environments.

Key Features

Feature	Design Value
Asymmetrical drive strength	8 A sink > 4 A source enables faster MOSFET turn-off-critical for preventing shoot-through in half-bridge and synchronous rectifier stages.
True rail-to-rail output	P-channel source + N-channel sink eliminates body-diode voltage drop-delivers full 0 V to VDD gate swing for GaN HEMT threshold compliance.
Integrated UVLO with hysteresis	4.2 V ON / 3.9 V OFF (0.3 V hysteresis) ensures clean power-on sequencing and prevents erratic gate toggling during supply ramp-up.
Input fault tolerance	–10 V input rating and 5 A reverse current capability protect against ground shift transients and inductive kickback without external components.
Fail-safe logic default	IN+ pulled down and IN− pulled up guarantee OUT = low at power-up, startup, or floating inputs-eliminates unintended switch-on.

Applications

Solar Micro-Inverter Gate Drive

Industrial DC-DC Converter

Use Scenario: Driving low-side GaN HEMTs in interleaved LLC resonant converters operating at 1–2 MHz.

IC Role / Device Role / Timing Role: Low-side gate driver providing precise, high-slew-rate gate control with sub-20 ns propagation delay and shoot-through protection.

Use Value: Enables zero-voltage switching (ZVS) across wide load range by minimizing dead-time uncertainty and supporting fast dV/dt control.

Use Scenario: Controlling logic-level OptiMOS™ MOSFETs in 48 V–12 V isolated buck converters for factory automation I/O modules.

IC Role / Device Role / Timing Role: Single-channel low-side driver delivering 4 A/8 A peak current to charge/discharge 3.5 nF gate capacitance within 8 ns rise/fall time.

Use Value: Reduces conduction loss by 12% vs. standard drivers via lower R_DS(on) MOSFET utilization enabled by full rail-to-rail gate swing.

EV Off-Board Charger Power Stage

Power Tool Motor Control

Use Scenario: Driving parallel Si MOSFETs in 6.6 kW AC–DC PFC front-end using interleaved boost topology.

IC Role / Device Role / Timing Role: Robust low-side driver handling 5 A reverse current from inductive leakage and sustaining –10 V input during ground bounce.

Use Value: Eliminates need for external TVS diodes on IN+/IN− lines-reducing BOM count and improving long-term reliability under thermal cycling.

Use Scenario: Gate driving 30 V N-channel MOSFETs in 18–24 V cordless power tool motor H-bridges with regenerative braking.

IC Role / Device Role / Timing Role: Fast-turnoff optimized driver (8 A sink) enabling rapid MOSFET commutation during dynamic brake transitions.

Use Value: Cuts braking energy dissipation by 35% compared to symmetric 4 A/4 A drivers due to 2× faster gate discharge.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
1EDN7512BXTMA1	SOT23-5 package, identical electrical specs but higher θ_JA (160 °C/W vs. 65 °C/W), no exposed thermal pad.	Preferred for space-constrained PCBs where thermal budget allows ≤1.5 W continuous dissipation.	Select when board layout lacks thermal vias or copper area for WSON-6 pad; accept 30% lower max duty-cycle at full load.
UCC27517DBVR	Texas Instruments part: 4 A/4 A symmetric drive, 17 ns delay, no –10 V input rating, 5.5 V min VDD.	Suitable for cost-sensitive 5 V–12 V systems where GaN or high-speed Si MOSFETs are not used.	Choose only if UVLO threshold >5 V is acceptable and reverse current protection is handled externally.

Compared with 1EDN7512BXTMA1, the 1EDN7512GXTMA1 delivers 2.5× better thermal resistance and supports higher ambient temperatures in sealed enclosures; versus UCC27517DBVR, it adds critical –10 V input tolerance and asymmetric drive for GaN-optimized switching.

Availability

1EDN7512GXTMA1 is available at Aetrix Electronics and suitable for solar micro-inverters, industrial DC-DC converters, and EV off-board chargers requiring stable component supply, JEDEC-qualified industrial reliability, and leadless package thermal performance.

Supply support for 1EDN7512GXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The EiceDRIVER™ 1EDN751x family targets high-frequency, high-reliability power conversion-designed specifically for low-side gate driving of logic-level MOSFETs and GaN HEMTs in SMPS, PFC, and renewable energy systems.

FAQ

What is the maximum allowable continuous output current for 1EDN7512GXTMA1?

The device delivers 4 A source and 8 A sink peak currents, but continuous output current is thermally limited. With proper PCB thermal design (6× thermal vias to inner GND plane), sustained 2.5 A RMS is achievable at T_A = 85 °C. Derating curves in Figure 17 of the datasheet define exact limits per ambient temperature and copper area.

Does 1EDN7512GXTMA1 require external bootstrap capacitors?

No. As a dedicated low-side gate driver, 1EDN7512GXTMA1 operates with a single VDD supply referenced to GND and does not require bootstrap circuitry. Its rail-to-rail output stage drives the MOSFET gate directly between 0 V and VDD without voltage-doubling networks.

Can IN+ and IN− be tied together for single-input operation?

Yes-connecting IN+ and IN− forms a single-ended input with built-in hysteresis. When driven high, OUT turns on; when driven low or left floating, OUT remains off due to internal pull-down/pull-up. This configuration maintains noise immunity while simplifying controller interface.

Is the exposed pad on the WSON-6 package electrically connected?

Yes-the exposed thermal pad is internally connected to GND and must be soldered to a PCB GND plane with ≥6 thermal vias (0.3 mm diameter). Leaving it unconnected degrades thermal resistance by >40% and increases junction temperature beyond safe operating limits.

1EDN7512GXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: EiceDRIVER™

Package/Case:: 6-WDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Driven Configuration:: Low-Side

Channel Type:: Single

Number of Drivers:: 1

Gate Type:: N-Channel MOSFET

Voltage - Supply:: 4.5V ~ 20V

Logic Voltage - VIL, VIH:: -

Current - Peak Output (Source, Sink):: 4A, 8A

Input Type:: Inverting, Non-Inverting

High Side Voltage - Max (Bootstrap):: -

Rise / Fall Time (Typ):: 6.5ns, 4.5ns

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-WSON-6-1

1EDN7512GXTMA1 FAQ

1.How can I place an order for 1EDN7512GXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1EDN7512GXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1EDN7512GXTMA1 reliable?

The price and inventory of 1EDN7512GXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1EDN7512GXTMA1 is usually 5 days.

3.What payment methods are accepted for 1EDN7512GXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1EDN7512GXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1EDN7512GXTMA1?

1EDN7512GXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1EDN7512GXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1EDN7512GXTMA1?

For technical support, including 1EDN7512GXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1EDN7512GXTMA1 requirements.

6.How does Aetrix verify that 1EDN7512GXTMA1 is sourced from the original manufacturer or authorized distributors?

All 1EDN7512GXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1EDN7512GXTMA1 meets industry standards.

7.What is the process for return or replacement of 1EDN7512GXTMA1?

All 1EDN7512GXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 1EDN7512GXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1EDN7512GXTMA1 part is unused and in its original packaging.

Return procedure for 1EDN7512GXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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