Infineon Technologies 1EDN7550BXTSA1

Overview

1EDN7550BXTSA1 from Infineon Technologies is a single-channel non-isolated gate driver IC supporting both high-side and low-side MOSFET/SiC/GaN switching in half-bridge, boost PFC, and switched-tank topologies. It features truly differential inputs (TDI), ±200 V static common-mode voltage range, 4 A source / 8 A sink peak output current, 45 ns propagation delay (±7/+10 ns), and operates with 4 V UVLO threshold. It is used in industrial SMPS and telecom DC-DC bricks where PCB parasitic inductance and ground shift challenge conventional drivers.

For engineers reviewing the 1EDN7550BXTSA1 datasheet, 1EDN7550BXTSA1 pinout, 1EDN7550BXTSA1 application, or 1EDN7550BXTSA1 equivalent, this page delivers verified technical context, package-specific pin mapping, real-world topology support, and validated alternative options for high-CMR gate drive design.

Technical Context

The 1EDN7550BXTSA1 implements a truly differential input (TDI) stage with passive RC filtering and a high-CMRR amplifier, enabling robust operation under ±200 V DC common-mode offset between controller ground and driver ground. Input resistors Rin1/Rin2 are mandatory to configure CMR and define static/dynamic rejection - no direct IN–to-GND connection is allowed.

Its rail-to-rail complementary MOS output stage delivers 4 A sourcing (pMOS, R_ON = 0.85 Ω) and 8 A sinking (nMOS, R_ON = 0.35 Ω), enabling fast turn-on/turn-off of low-Q_g SiC MOSFETs and GaN HEMTs. The pulse extender blocks sub-25 ns glitches, and propagation delay accuracy is ±7/+10 ns over temperature and supply.

Key Specifications

Pinout & Package

1EDN7550BXTSA1 is housed in the PG-SOT23-6 package (JEDEC MO-178AA), a surface-mount plastic package with gull-wing leads and no exposed thermal pad. Pin 1 is marked by a dot; pin numbering follows standard SOT23-6 top-view orientation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-CMR gate driver applications.

Compared with 1EDN7550UXTSA1, the 1EDN7550BXTSA1 trades thermal performance for compact SOT23-6 placement; versus UCC27531DBVR, it uniquely enables unisolated high-side drive with ±200 V tolerance - a functional distinction, not just parameter scaling.

Availability

1EDN7550BXTSA1 is available at Aetrix Electronics and suitable for industrial SMPS, telecom DC-DC bricks, and motor control systems requiring stable component supply, JEDEC industrial qualification, and high-CMR gate drive capability.

Supply support for 1EDN7550BXTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The EiceDRIVER™ 1EDNx550 product line targets cost-sensitive, high-reliability power conversion systems needing robust gate drive without isolation - specifically engineered for SiC, GaN, and advanced silicon MOSFETs in PFC, LLC, and motor drives.

FAQ

Can 1EDN7550BXTSA1 drive SiC MOSFETs in a high-side configuration without isolation?

Yes - its ±200 V static common-mode input range allows direct high-side connection to SiC MOSFET source terminals in boost PFC or half-bridge topologies. The TDI input stage rejects ground shift up to that level, eliminating need for isolated gate drivers or level shifters in these applications.

What are the mandatory external components for 1EDN7550BXTSA1 operation?

Two matched input resistors (Rin1 and Rin2) are mandatory - they form the differential interface between controller PWM/SGND and IN+/IN− pins. Values depend on controller voltage and target CMR; e.g., 33 kΩ for 3.3 V controllers targeting ±72 V static CMR. No pull-up/down or bypass resistors are required beyond these.

Does 1EDN7550BXTSA1 support negative gate drive voltage?

Yes - its independent source and sink outputs allow bipolar gate biasing. By referencing VDD to a positive rail and GND to a negative rail (e.g., +6 V / −3 V), it delivers +6 V turn-on and −3 V turn-off, critical for GaN HEMT dynamic R_DS(on) control and EMI reduction.

How does the pulse extender affect minimum PWM frequency compatibility?

The pulse extender blocks input pulses shorter than 25 ns, meaning the driver will not respond to PWM edges with active time <25 ns. At 1 MHz, minimum on-time is 100 ns - well above threshold. Below ~5 MHz, no timing limitation applies; the feature primarily improves noise immunity, not frequency ceiling.