Infineon Technologies 1EDN7550UXTSA1

Overview

1EDN7550UXTSA1 from Infineon is a single-channel high-side/low-side non-isolated gate driver IC with truly differential inputs (TDI), ±200 V static common-mode rejection, 4 A source / 8 A sink peak output current, and 45 ns propagation delay (±7/+10 ns). It drives SiC MOSFETs, GaN HEMTs, and Kelvin-source power stages in high-parasitic-inductance half-bridge SMPS.

For engineers reviewing the 1EDN7550UXTSA1 datasheet, 1EDN7550UXTSA1 pinout, 1EDN7550UXTSA1 application, or 1EDN7550UXTSA1 equivalent, key selection criteria include TDI input robustness under ±200 V DC common-mode shift, rail-to-rail bipolar gate drive capability, UVLO threshold of 4.2 V (ON) / 3.9 V (OFF), and PG-TSNP-6 package suitability for high-density power stage layout.

Technical Context

The 1EDN7550UXTSA1 implements a fully differential TDI input stage with passive RC filtering and a 2nd-order internal low-pass filter, achieving 3rd-order total filtering at 12 MHz corner frequency to suppress >100 MHz ringing. Its input stage decouples controller ground from driver ground via external Rin1/Rin2 resistors, enabling operation under large DC common-mode voltage shifts.

The output stage uses complementary pMOS/nMOS transistors with 0.85 Ω sourcing R_ON and 0.35 Ω sinking R_ON, delivering rail-to-rail drive without n-channel voltage drop penalties. UVLO thresholds are fixed at 4.2 V (turn-on) and 3.9 V (turn-off), ensuring reliable gate drive only within valid V_DD range.

Key Specifications

Pinout & Package

1EDN7550UXTSA1 is housed in Infineon's PG-TSNP-6 package: ultra-small 1.6 mm × 1.6 mm outline with exposed thermal pad, JEDEC industrial-grade qualified, and compatible with reflow soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-CMR gate driver applications.

Compared with 1EDN7550BXTSA1, the TSNP-6 variant offers 40% smaller area and 2× better thermal resistance; versus 1EDN8550BXTSA1, the 4.2 V UVLO enables earlier turn-on in low-voltage SiC gate drive circuits, improving light-load efficiency.

Availability

1EDN7550UXTSA1 is available at Aetrix Electronics and suitable for server SMPS, telecom DC-DC bricks, and industrial motor control systems requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for 1EDN7550UXTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon carbide and gate driver innovation.

The EiceDRIVER™ 1EDNx550 product line targets cost-sensitive, high-reliability power conversion systems needing non-isolated high-CMR gate drive-specifically for SiC, GaN, and Kelvin-source MOSFET topologies in SMPS and motor drives.

FAQ

What is the minimum recommended value for Rin1 and Rin2 resistors?

Rin1 and Rin2 must be selected based on controller PWM voltage and required CMR. For 3.3 V controllers, 33 kΩ (0.1%, 0603) yields ±72 V/±84 V static/dynamic CMR. For 12 V PWM, 127 kΩ (0.1%, 1206) achieves ±200 V/±400 V. Values below 10 kΩ risk exceeding ±6 V/−7 V input stage voltage limits and violating absolute maximum ratings.

Can 1EDN7550UXTSA1 drive GaN HEMTs requiring negative turn-off voltage?

Yes. The rail-to-rail output stage delivers true GND-referenced sink action, enabling negative gate drive when V_DD is floated above source potential (e.g., in high-side configurations). With proper bootstrap or isolated bias supply, it supports −5 V to +6 V gate voltage swing, meeting typical GaN HEMT turn-off requirements.

Is the 45 ns propagation delay matched between rising and falling edges?

No. Propagation delay is asymmetric: typical 45 ns for both edges, but accuracy is specified as −7 ns (min) for rising edge and +10 ns (max) for falling edge. This ±7/+10 ns tolerance reflects internal pulse extender and Schmitt-trigger asymmetry, not mismatch-ensuring consistent minimum dead-time margins in half-bridge control.

Does the TSNP-6 package require special PCB layout considerations?

Yes. The exposed thermal pad must be soldered to a minimum 10 mm² copper pour with ≥4 thermal vias (0.3 mm diameter) to achieve rated 1.5 W power dissipation. Input traces (IN+, IN−) must be length-matched and shielded from noisy power nodes to preserve CMR; asymmetry >50 µm degrades static CMR by up to 30%.