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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Gate Drivers

Infineon Technologies 1EDN8511BXTSA1

Name: 1EDN8511BXTSA1
Brand: Infineon Technologies
SKU: 1EDN8511BXTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 1EDN8511BXTSA1

Manufacturer:: Infineon Technologies

Category:: Gate Drivers

Package:: SOT-23-6

Datasheet:: 1EDN8511BXTSA1.pdf

Description:: IC GATE DRV HALF BRD/LOW SOT23-6

Quantity:: RFQ Add To RFQ list

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Product details

Overview

1EDN8511BXTSA1 from Infineon Technologies is a single-channel low-side gate driver IC designed to drive normal-level and superjunction MOSFETs (e.g., CoolMOS™) and GaN HEMTs in high-efficiency power stages. It delivers 4 A source / 8 A sink peak output current, features 19 ns typical propagation delay with ±6/–4 ns accuracy, and incorporates 8.0 V / 7.0 V UVLO thresholds - enabling robust operation in industrial SMPS and solar micro-inverters.

For engineers reviewing the 1EDN8511BXTSA1 datasheet, 1EDN8511BXTSA1 pinout, 1EDN8511BXTSA1 application, or 1EDN8511BXTSA1 equivalent, key selection criteria include its separated source/sink outputs, –10 V input voltage robustness, 5 A reverse current tolerance, rail-to-rail drive capability, and SOT23-6 package compatibility with industry-standard layout practices.

Technical Context

The 1EDN8511BXTSA1 implements a complementary MOS rail-to-rail output stage with discrete p-channel (source) and n-channel (sink) drivers, enabling true "brake-before-make" switching essential for half-bridge topologies. Its dual-input logic architecture (IN+, IN–) provides differential control with internal pull-up/pull-down biasing to prevent unintended turn-on during power-up or floating inputs.

UVLO is set at 8.0 V (ON) / 7.0 V (OFF), optimized for normal-level MOSFET gate thresholds, and integrated active filters suppress noise-induced false triggering. Input hysteresis remains stable at 1.1 V across 4.5–20 V supply range, and output impedance is specified at ≤0.85 Ω (source) and ≤0.35 Ω (sink).

Key Specifications

Parameter	Value and Actual Design Meaning
Output Drive	4 A source / 8 A sink peak - enables fast turn-on/turn-off of large gate capacitance MOSFETs while maintaining asymmetrical timing for shoot-through prevention.
Propagation Delay	19 ns typ. - minimizes timing uncertainty in high-frequency (>500 kHz) switching applications such as DC-DC converters and EV chargers.
UVLO Threshold	8.0 V ON / 7.0 V OFF - prevents MOSFET linear-mode operation under marginal supply conditions, protecting against thermal runaway in industrial power supplies.
Input Voltage Range	–10 V to VDD+0.3 V - withstands ground bounce up to 10 V negative swing without ESD structure conduction or latch-up.
Reverse Current Rating	5 A - safely handles reflected energy from inductive loads or cross-conduction events without damage or functional interruption.
Supply Voltage Range	4.5 V to 20 V - supports wide-bus designs including 12 V and 15 V control rails while delivering full output current capability.

Pinout & Package

1EDN8511BXTSA1 is housed in PG-SOT23-6-2 - a leaded, surface-mount package with 6 pins, JEDEC-compliant footprint, and industrial-grade thermal performance (R_thJA = 180 K/W). The package supports reflow soldering and offers mechanical robustness for high-vibration environments.

Pin/Terminal	Circuit Role	Design Meaning
1 VDD	Positive supply input	Accepts 4.5–20 V rail; powers internal logic and output stage; requires local 100 nF decoupling to GND.
2 OUT_SRC	Source output terminal	Drives gate high via p-channel MOS; low-impedance path (<0.85 Ω) ensures rapid turn-on with minimal voltage drop.
3 OUT_SNK	Sink output terminal	Drives gate low via n-channel MOS; stronger 8 A sink capability enables faster turn-off than turn-on for safe half-bridge commutation.
4 GND	Power and signal reference	Common return for VDD, inputs, and outputs; must be low-inductance connection to minimize ground bounce.
5 IN−	Inverting logic input	Internally pulled up; high or open → forces output low; enables enable/disable control or differential interface with IN+.
6 IN+	Non-inverting logic input	Internally pulled down; low or open → forces output low; differential pair with IN− provides noise-immune gate control.

Key Features

Feature	Design Value
Rail-to-rail output stage	True 0–VDD swing enabled by complementary p/n-MOS drivers - eliminates source-follower voltage loss and ensures full gate overdrive.
Dual independent output terminals	Separated OUT_SRC and OUT_SNK pins allow external R_g,on/R_g,off tuning - critical for optimizing switching speed and EMI in hard-switched topologies.
Input hysteresis	1.1 V typical, supply-independent - rejects noise on controller signals without requiring external Schmitt triggers or RC filtering.
UVLO with hysteresis	8.0 V ON / 7.0 V OFF (1 V hysteresis) - guarantees clean power-up sequencing and prevents erratic gate behavior during brown-out conditions.
Active output disable	Output held low during UVLO, startup, or floating inputs - eliminates shoot-through risk in unpowered or undervolted states.

Applications

Industrial SMPS

Solar Micro-Inverters

Use Scenario: High-density 1–3 kW AC/DC front-end converters operating at 100–300 kHz with CoolMOS™ CFD7 switches.

IC Role / Device Role / Timing Role: Low-side gate driver controlling synchronous rectifier or primary-side switch in LLC or phase-shifted full-bridge topology.

Use Value: 4 A/8 A drive strength reduces MOSFET switching losses by >15% vs. 2 A drivers; 19 ns delay tightens dead-time control for ZVS optimization.

Use Scenario: Single-phase grid-tied inverters with GaN HEMT half-bridges, converting DC from photovoltaic panels to 230 VAC.

IC Role / Device Role / Timing Role: Fast-turning low-side driver enabling <50 ns dead-time control and minimizing body-diode conduction in GaN devices.

Use Value: –10 V input tolerance accommodates ground shift between MCU and power stage; separated outputs allow asymmetric gate resistors for optimal dV/dt control.

EV Off-Board Chargers

Low-Voltage Power Tools

Use Scenario: 11 kW bidirectional OBC using interleaved totem-pole PFC and dual-phase DC-DC stages with 650 V SiC MOSFETs.

IC Role / Device Role / Timing Role: Low-side driver for PFC leg switches, synchronized to high-speed digital controller with precise timing margins.

Use Value: 8 V UVLO matches SiC gate threshold requirements; 5 A reverse current rating handles inductive kickback during fault conditions without latch-up.

Use Scenario: Cordless drill battery packs (18–40 V) driving 40 V logic-level MOSFETs in motor H-bridge with PWM frequencies up to 25 kHz.

IC Role / Device Role / Timing Role: Robust gate driver interfacing MCU GPIOs to motor FETs under high-current transients and ESD-prone handheld environments.

Use Value: LV-TTL-compatible inputs eliminate level-shifter need; SOT23-6 package allows compact PCB layout near motor driver ICs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
1EDN7511BXTSA1	4.2 V / 3.9 V UVLO; identical pinout and package; same 4 A/8 A drive but optimized for logic-level MOSFETs.	Targeted at 5 V control rails and logic-level OptiMOS™; unsuitable for 8–10 V gate drive requirements of normal-level devices.	Select when driving logic-level MOSFETs below 4.5 V threshold; not interchangeable without UVLO and gate drive margin review.
UCC27517DBVR	Single-output (common OUT), 4 A/4 A symmetric drive, 17 ns delay, no separated source/sink pins; SO-6 package.	Lacks independent R_g,on/R_g,off tuning; limited to applications where turn-on/turn-off symmetry is acceptable.	Choose for cost-sensitive, space-constrained designs where brake-before-make timing is not required and UVLO is externally managed.

Compared with 1EDN7511BXTSA1 and UCC27517DBVR, the 1EDN8511BXTSA1 uniquely combines 8 V UVLO, separated source/sink outputs, and –10 V input tolerance - making it the only option among the three qualified for robust, high-reliability normal-level MOSFET and GaN drive in industrial and automotive-adjacent systems.

Availability

1EDN8511BXTSA1 is available at Aetrix Electronics and suitable for industrial SMPS, solar micro-inverters, EV off-board chargers, and low-voltage power tools requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for 1EDN8511BXTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon-based and wide-bandgap solutions.

The EiceDRIVER™ 1EDN family targets high-efficiency, high-reliability gate driving in switched-mode power conversion - emphasizing robustness, timing precision, and compatibility with modern MOSFETs and GaN devices.

FAQ

What is the recommended gate resistor configuration for 1EDN8511BXTSA1?

Use separate resistors: R_g,on between OUT_SRC and MOSFET gate, and R_g,off between OUT_SNK and gate. Typical values range from 2.2 Ω to 10 Ω depending on switching speed and EMI requirements. Do not short OUT_SRC and OUT_SNK - they are electrically isolated internal nodes.

Does 1EDN8511BXTSA1 support 3.3 V logic inputs?

Yes. Its LV-TTL-compatible inputs accept 3.3 V logic levels with guaranteed recognition: IN+ low threshold is ≤0.8 V, high threshold ≥1.7 V; IN− operates inversely. Input hysteresis of 1.1 V ensures noise immunity without external components.

Can 1EDN8511BXTSA1 drive GaN HEMTs reliably?

Yes. Its 4 A/8 A peak drive, 19 ns propagation delay, and rail-to-rail output voltage swing match GaN device requirements. The –10 V input tolerance and 5 A reverse current rating further protect against gate oscillation and transient stress common in GaN half-bridges.

Is the exposed pad of 1EDN8511BXTSA1 internally connected?

No. The PG-SOT23-6-2 package used for 1EDN8511BXTSA1 has no exposed thermal pad. That feature applies only to the WSON-6 variant (e.g., 1EDN7512G). Thermal dissipation relies on standard PCB copper area connected to Pin 4 (GND).

1EDN8511BXTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: EiceDRIVER™

Package/Case:: SOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

Programmable:: Not Verified

Driven Configuration:: Half-Bridge, Low-Side

Channel Type:: Single

Number of Drivers:: 1

Gate Type:: N-Channel, P-Channel MOSFET

Voltage - Supply:: 4.5V ~ 20V

Logic Voltage - VIL, VIH:: 1.2V, 1.9V

Current - Peak Output (Source, Sink):: 4A, 8A

Input Type:: Inverting, Non-Inverting

High Side Voltage - Max (Bootstrap):: -

Rise / Fall Time (Typ):: 6.5ns, 4.5ns

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23-6-2

1EDN8511BXTSA1 FAQ

1.How can I place an order for 1EDN8511BXTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1EDN8511BXTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1EDN8511BXTSA1 reliable?

The price and inventory of 1EDN8511BXTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1EDN8511BXTSA1 is usually 5 days.

3.What payment methods are accepted for 1EDN8511BXTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1EDN8511BXTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1EDN8511BXTSA1?

1EDN8511BXTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1EDN8511BXTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1EDN8511BXTSA1?

For technical support, including 1EDN8511BXTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1EDN8511BXTSA1 requirements.

6.How does Aetrix verify that 1EDN8511BXTSA1 is sourced from the original manufacturer or authorized distributors?

All 1EDN8511BXTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1EDN8511BXTSA1 meets industry standards.

7.What is the process for return or replacement of 1EDN8511BXTSA1?

All 1EDN8511BXTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with 1EDN8511BXTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1EDN8511BXTSA1 part is unused and in its original packaging.

Return procedure for 1EDN8511BXTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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