My Inquiry
My Account
Infineon Technologies 1EDN8550BXTSA1
- Part No.:
- 1EDN8550BXTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- SOT-23-6
- Datasheet:
-
1EDN8550BXTSA1.pdf
- Description:
- IC GATE DRVR HIGH-SIDE SOT23-6
- Quantity:
- Payment:
- Shipping:
Inventory:1,332
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
1EDN8550BXTSA1 from Infineon Technologies is a single-channel, non-isolated high-side/low-side gate driver IC with truly differential inputs (TDI), ±200 V static common-mode rejection, 4 A source / 8 A sink peak output current, and 45 ns propagation delay (±7/+10 ns accuracy), designed for driving Si, SiC MOSFETs and GaN HEMTs in high-parasitic-inductance half-bridge and Kelvin-source PFC topologies.
For engineers reviewing the 1EDN8550BXTSA1 datasheet, 1EDN8550BXTSA1 pinout, 1EDN8550BXTSA1 application, or 1EDN8550BXTSA1 equivalent, key selection criteria include UVLO threshold (8.0 V ON / 7.0 V OFF), TDI input resistor dependency for CMR tuning, rail-to-rail complementary MOS output stage, SOT23-6 package compatibility, and bipolar gate drive capability for fast-switching power stages.
Technical Context
The 1EDN8550BXTSA1 implements a fully differential TDI input stage with passive RC filtering and a 2nd-order internal low-pass filter, achieving 3rd-order total filtering at 12 MHz corner frequency to suppress >100 MHz ringing. Its differential Schmitt trigger and pulse extender reject sub-25 ns noise pulses.
The output stage uses complementary pMOS/nMOS transistors with 0.85 Ω sourcing RON and 0.35 Ω sinking RON, enabling rail-to-rail drive without n-channel voltage drop penalties. Input resistors Rin1/Rin2 are mandatory and determine both static (±200 V max.) and dynamic (±400 V max.) CMR performance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Drive Current | 4 A source / 8 A sink peak - enables fast turn-on/turn-off of low-Rds(on) SiC/GaN devices |
| Propagation Delay | 45 ns (−7/+10 ns accuracy) - supports >10 MHz switching with deterministic timing |
| UVLO Threshold | 8.0 V ON / 7.0 V OFF - prevents partial gate drive during brown-out conditions |
| CMR Static Range | ±200 V (with 127 kΩ input resistors) - allows direct high-side drive in boost PFC with Kelvin-source MOSFETs |
| Input Architecture | Truly Differential Inputs (TDI) - eliminates false triggering from PCB ground bounce or EMI coupling |
| Package | SOT23-6 - enables compact layout in space-constrained SMPS and motor control PCBs |
Pinout & Package
1EDN8550BXTSA1 is housed in a PG-SOT23-6 package (JEDEC TO-236AB), with 0.95 mm pitch, 2.9 mm × 1.6 mm footprint, and exposed thermal pad for enhanced power dissipation in industrial-grade operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 IN− | Negative differential input | Connected via resistor to controller SGND or PWM return; required for CMR configuration and TDI functionality |
| 2 GND | Driver reference ground | Return path for gate drive current and UVLO reference; isolated from controller ground by TDI architecture |
| 3 IN+ | Positive differential input | Connected via resistor to controller PWM output; differential pair with IN− defines logic state under common-mode stress |
| 4 VDD | Positive supply rail | Provides gate drive voltage (typically 12–15 V); powers internal logic and output stage |
| 5 OUT_SRC | Source output terminal | Low-impedance pMOS switch to VDD (0.85 Ω); delivers +4 A for fast MOSFET turn-on |
| 6 OUT_SNK | Sink output terminal | Low-impedance nMOS switch to GND (0.35 Ω); delivers −8 A for fast MOSFET turn-off |
Key Features
| Feature | Design Value |
|---|---|
| Truly Differential Inputs (TDI) | Enables reliable operation with up to ±200 V DC offset between controller and driver grounds without level shifters |
| Rail-to-Rail Complementary Output Stage | pMOS/nMOS topology eliminates body-diode conduction loss and ensures full VDD-to-GND gate swing |
| Programmable UVLO Threshold | Fixed 8.0 V ON / 7.0 V OFF setting prevents weak drive during supply sag in telecom/server SMPS |
| Sub-25 ns Pulse Rejection | Integrated pulse extender blocks noise spikes shorter than 25 ns, improving immunity in high-dV/dt environments |
Applications
| Server & Telecom SMPS | Industrial Half-Bridge Motor Drives |
|---|---|
Use Scenario: High-density 48 V input server power supplies using SiC MOSFETs in interleaved totem-pole PFC stages. IC Role / Device Role / Timing Role: High-side gate driver for Kelvin-source SiC MOSFETs, directly referenced to switching node with ±200 V CMR tolerance. Use Value: Eliminates need for isolated gate drivers or level shifters, reducing BOM count and layout complexity while maintaining <45 ns timing fidelity. | Use Scenario: 3-phase BLDC drives in factory automation systems where PCB parasitic inductance causes ground bounce >50 V/ns. IC Role / Device Role / Timing Role: Low-side gate driver with TDI inputs immune to ground-reference shifts between MCU and power stage. Use Value: Prevents false turn-on during high-di/dt commutation, ensuring robust gate control without additional snubbing or shielding. |
| Kelvin-Source Boost PFC | GaN-Based DC-DC Bricks |
Use Scenario: 3.3 kW telecom rectifier using 4-pin Kelvin-source MOSFETs to separate power and sense source paths. IC Role / Device Role / Timing Role: Dedicated high-side driver interfacing with Kelvin-source gate and sense terminals, rejecting common-mode noise on sense line. Use Value: Enables accurate gate control independent of source inductance voltage drop, preserving ZVS/ZCS timing integrity. | Use Scenario: 48 V–12 V GaN HEMT-based point-of-load converters in AI accelerator racks requiring >1 MHz switching. IC Role / Device Role / Timing Role: Low-side driver delivering 8 A sink current to rapidly discharge GaN gate charge with minimal Miller plateau time. Use Value: Achieves <20 ns effective turn-off delay, supporting stable 1.2 MHz operation with <5% duty cycle jitter. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-CMR gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1EDN7550UXTSA1 | TSNP-6 package; 4.2 V/3.9 V UVLO; ±200 V static CMR; same TDI architecture | Better thermal performance in high-power density layouts due to smaller thermal resistance (RthJA = 120 K/W vs. 180 K/W) | Select when board space is constrained and thermal management requires lower junction-to-ambient resistance |
| 1EDN9550BXTSA1 | SOT23-6 package; 14.9 V/14.4 V UVLO; identical timing and drive strength | Optimized for 15 V gate drive systems requiring higher UVLO hysteresis to avoid oscillation near rail limits | Select when driving 15 V-rated Si MOSFETs in industrial inverters where supply ripple exceeds 1 Vpp |
Compared with 1EDN7550UXTSA1 and 1EDN9550BXTSA1, the 1EDN8550BXTSA1 provides optimal balance of UVLO margin (8.0 V ON), SOT23-6 manufacturability, and proven field reliability in 12 V gate-drive telecom SMPS, making it the preferred choice for cost-sensitive, high-volume server power designs.
Availability
1EDN8550BXTSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and telecom DC-DC bricks requiring stable component supply, JEDEC industrial qualification, and long-term production continuity.
Supply support for 1EDN8550BXTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon carbide and gate driver innovation.
The EiceDRIVER™ 1EDNx550 product line was developed to replace isolated and level-shifting gate drivers in high-CMR applications, enabling cost-effective, compact, and high-reliability solutions for Si, SiC, and GaN power stages.
FAQ
What input resistors are required for 1EDN8550BXTSA1 to achieve ±200 V static CMR?
127 kΩ, 0.1% tolerance, 1206-form-factor resistors (Rin1 and Rin2) are required to achieve the full ±200 V static CMR rating. These values ensure the internal input stage operates within its linear range (+6 V/−7 V at IN+/IN−) while meeting absolute maximum ratings (±10 V). Resistor selection must follow Table 16 in the datasheet for matching PWM voltage and creepage requirements.
Can 1EDN8550BXTSA1 drive GaN HEMTs with negative turn-off voltage?
Yes - the complementary MOS output stage supports true rail-to-rail swing, allowing VGS = −5 V to +12 V when VDD = 12 V and GND is referenced appropriately. This enables active negative turn-off for enhancement-mode GaN devices, reducing Miller-induced shoot-through risk without external bias circuitry.
Is 1EDN8550BXTSA1 pin-compatible with other 1EDNx550 variants in SOT23-6?
Yes - all SOT23-6 variants (1EDN7550B, 1EDN8550B, 1EDN6550B, 1EDN9550B) share identical pinout, package dimensions, and thermal pad layout. Only UVLO thresholds differ; no PCB redesign is needed when migrating between them for system-level voltage margin tuning.
Does 1EDN8550BXTSA1 require external bootstrap or isolated supplies for high-side operation?
No - unlike traditional high-side drivers, 1EDN8550BXTSA1 uses TDI architecture to tolerate ±200 V common-mode voltage between controller and driver grounds. It operates from a single low-side VDD supply and does not require floating supplies, bootstrap diodes, or isolated DC-DC converters for high-side configurations.
1EDN8550BXTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- SOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- High-Side
- Channel Type:
- Single
- Number of Drivers:
- 1
- Gate Type:
- N-Channel, P-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 20V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 4A, 8A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 84 V
- Rise / Fall Time (Typ):
- 6.5ns, 4.5ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT23-6
1EDN8550BXTSA1 FAQ
1.How can I place an order for 1EDN8550BXTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 1EDN8550BXTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1EDN8550BXTSA1 reliable?
The price and inventory of 1EDN8550BXTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1EDN8550BXTSA1 is usually 5 days.
3.What payment methods are accepted for 1EDN8550BXTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1EDN8550BXTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1EDN8550BXTSA1?
1EDN8550BXTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1EDN8550BXTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1EDN8550BXTSA1?
For technical support, including 1EDN8550BXTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1EDN8550BXTSA1 requirements.
6.How does Aetrix verify that 1EDN8550BXTSA1 is sourced from the original manufacturer or authorized distributors?
All 1EDN8550BXTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1EDN8550BXTSA1 meets industry standards.
7.What is the process for return or replacement of 1EDN8550BXTSA1?
All 1EDN8550BXTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with 1EDN8550BXTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1EDN8550BXTSA1 part is unused and in its original packaging.
Return procedure for 1EDN8550BXTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1EDN8550BXTSA1 Tags
-
ZXGD3009E6TA
Diodes Incorporated
-
1EDN7512BXTSA1
Infineon Technologies
-
UCC27517DBVR
Texas Instruments
-
MCP1416T-E/OT
Microchip Technology
-
MCP1402T-E/OT
Microchip Technology
-
MCP1415T-E/OT
Microchip Technology
-
MCP1401T-E/OT
Microchip Technology
-
IX4428NTR
Littelfuse Inc.
-
IRS2005STRPBF
Infineon Technologies
-
IRS2008STRPBF
Infineon Technologies
-
IX4310TTR
Littelfuse Inc.
-
2EDN7524RXTMA1
Infineon Technologies
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
