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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Gate Drivers

Infineon Technologies 1EDN9550BXTSA1

Name: 1EDN9550BXTSA1
Brand: Infineon Technologies
SKU: 1EDN9550BXTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 1EDN9550BXTSA1

Manufacturer:: Infineon Technologies

Category:: Gate Drivers

Package:: SOT-23-6

Datasheet:: 1EDN9550BXTSA1.pdf

Description:: IC GATE DRVR HI/LOW SIDE SOT23-6

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Product details

Overview

1EDN9550BXTSA1 from Infineon is a single-channel high-side/low-side non-isolated gate driver IC with truly differential inputs (TDI), ±200 V static common-mode voltage range, 4 A source / 8 A sink peak output current, and 45 ns propagation delay (±7/+10 ns accuracy), designed for driving SiC MOSFETs, GaN HEMTs, and Kelvin-source MOSFETs in high-parasitic-inductance half-bridge and switched-tank converter topologies.

For engineers reviewing the 1EDN9550BXTSA1 datasheet, 1EDN9550BXTSA1 pinout, 1EDN9550BXTSA1 application, or 1EDN9550BXTSA1 equivalent, key selection criteria include UVLO threshold (14.9 V ON / 14.4 V OFF), TDI input resistor dependency for CMR tuning, rail-to-rail output stage R_ON (0.85 Ω source / 0.35 Ω sink), and SOT23-6 package compatibility with high-density PCB layouts.

Technical Context

The 1EDN9550BXTSA1 implements a fully differential TDI input stage that decouples controller PWM/SGND signals from driver GND via external resistors (R_in1, R_in2), enabling operation under ±200 V DC common-mode offset. Its internal high-CMRR amplifier (gain = 4.5) feeds a 3rd-order low-pass filter (f_c = 12 MHz) and differential Schmitt trigger with 25 ns pulse extender to suppress sub-25 ns noise transients.

The output stage uses complementary MOS transistors for true rail-to-rail drive: pMOS source switch (R_ON = 0.85 Ω, I_PK = +4 A) and nMOS sink switch (R_ON = 0.35 Ω, I_PK = −8 A). UVLO thresholds are fixed at 14.9 V (turn-on) and 14.4 V (turn-off), with no external adjustment.

Key Specifications

Parameter	Value and Actual Design Meaning
Output Drive Current	+4 A source / −8 A sink peak - enables fast switching of low-R_ds(on) SiC/GaN devices with minimal Miller plateau time
Propagation Delay	45 ns (−7/+10 ns accuracy) - ensures precise timing alignment in high-frequency SMPS (>1 MHz)
UVLO Threshold	14.9 V ON / 14.4 V OFF - prevents partial turn-on of power switches during brown-out conditions
Static CMR Range	±200 V - supports high-side operation in boost PFCs and switched-tank converters without isolation
Input Structure	Truly Differential Inputs (TDI) - requires external R_in1/R_in2 resistors to configure CMR and reject ground-shift-induced false triggering
Package	SOT23-6 - surface-mount footprint compatible with automated assembly and thermal relief pads for 1.5 W dissipation

Pinout & Package

1EDN9550BXTSA1 is housed in a PG-SOT23-6 package (JEDEC MO-178AA), with 0.95 mm pitch, exposed thermal pad, and industrial-grade qualification per JEDEC JESD47.

Pin/Terminal	Circuit Role	Design Meaning
1 IN−	Negative differential input	Connected to controller SGND or PWM return via R_in2; forms TDI pair with IN+ to reject common-mode noise
2 GND	Driver reference ground	Return path for gate drive current and UVLO reference; must be isolated from power ground in high-side configurations
3 IN+	Positive differential input	Connected to controller PWM output via R_in1; differential voltage across IN+/IN− controls output state
4 VDD	Positive supply rail	Provides gate drive voltage (typically 12–20 V); powers internal logic and output stage
5 OUT_SRC	Source output terminal	Drives gate high via pMOS switch (R_ON = 0.85 Ω); delivers +4 A peak into capacitive load
6 OUT_SNK	Sink output terminal	Drives gate low via nMOS switch (R_ON = 0.35 Ω); sinks −8 A peak for rapid turn-off

Key Features

Feature	Design Value
Truly Differential Input (TDI)	Enables robust control under ±200 V DC ground shift without isolation components or level shifters
Rail-to-Rail Output Stage	pMOS source + nMOS sink architecture eliminates body-diode voltage drop, ensuring full VDD-to-GND gate swing
Programmable CMR via External Resistors	R_in1/R_in2 selection directly sets static/dynamic common-mode rejection (e.g., 127 kΩ → ±200 V static)
Noise Immunity Architecture	3rd-order input filtering + 25 ns pulse extender rejects >100 MHz ringing and sub-25 ns EMI transients
Active Low-State Clamp	Output defaults to GND when inputs are floating - prevents unintended power device turn-on during startup or fault

Applications

Server & Telecom SMPS

Industrial DC-DC Bricks

Use Scenario: High-efficiency 48 V–12 V intermediate bus converters operating at 500 kHz–1 MHz with SiC MOSFETs.

IC Role / Device Role / Timing Role: High-side gate driver for synchronous rectification in active clamp forward or phase-shifted full-bridge topologies.

Use Value: ±200 V CMR tolerance allows direct high-side placement on primary-side heatsink without isolated gate drivers, reducing BOM count by one isolator.

Use Scenario: Compact 3 kW industrial DC-DC modules with Kelvin-source MOSFETs in boost PFC stages.

IC Role / Device Role / Timing Role: Low-side driver for 4-pin MOSFETs where source inductance causes ground bounce up to ±150 V.

Use Value: TDI input rejects source-inductance-induced common-mode spikes, eliminating false turn-on and improving reliability over standard gate drivers.

Power Tool Motor Control

Switched-Tank Converters

Use Scenario: 18–60 V battery-powered BLDC inverters with GaN HEMTs switching at 250 kHz.

IC Role / Device Role / Timing Role: Low-side driver in three-phase half-bridge with high dv/dt (>50 V/ns) and PCB trace inductance >10 nH.

Use Value: 45 ns propagation delay with ±7 ns accuracy ensures tight dead-time control; 8 A sink current minimizes GaN gate discharge time.

Use Scenario: Resonant LLC and LCC converters using high-side SiC switches in tank-leg configuration.

IC Role / Device Role / Timing Role: High-side driver referenced to oscillating switch node with ±120 V common-mode swing at 300–800 kHz.

Use Value: Static CMR of ±200 V accommodates full tank-node voltage swing without level-shifting circuitry or bootstrap complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-CMR gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
1EDN7550U	TSNP-6 package; lower UVLO (4.2 V ON); ±200 V static CMR; same TDI architecture	Better thermal performance (0.5 K/W junction-to-pad) but requires different layout; suited for space-constrained telecom modules	Select when board area is limited and thermal pad soldering is feasible; not pin-compatible with SOT23-6
1EDN8550B	SOT23-6 package; 8.0 V ON / 7.0 V OFF UVLO; identical pinout and timing specs	Lower UVLO enables use with 8–10 V gate drive rails; less suitable for 15 V SiC gate bias systems	Select when driving devices requiring lower gate voltage (e.g., some trench-MOSFETs); retains same PCB footprint

Compared with 1EDN7550U and 1EDN8550B, the 1EDN9550BXTSA1 offers the highest UVLO threshold (14.9 V), making it optimal for 15 V gate-bias SiC/GaN systems where overvoltage protection and clean turn-on margins are critical-while maintaining identical timing and CMR capability in the SOT23-6 form factor.

Availability

1EDN9550BXTSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC bricks, and power tool motor drives requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial-grade performance.

Supply support for 1EDN9550BXTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial gate drivers, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The EiceDRIVER™ 1EDNx550 product line targets cost-sensitive, high-reliability power conversion systems where isolation complexity must be avoided-delivering high-CMR gate drive for SiC, GaN, and Kelvin-source MOSFETs in SMPS, motor control, and renewable energy inverters.

FAQ

What is the required external resistor configuration for ±200 V static CMR operation?

For ±200 V static CMR, Infineon specifies 127 kΩ, 0.1% tolerance, 1206-size resistors for both R_in1 and R_in2, used with a 12 V controller supply. This configuration satisfies the input pin voltage limits (+6 V/−7 V) while achieving full ±200 V DC common-mode rejection. Layout symmetry between the two input paths is mandatory to avoid CMR degradation.

Can 1EDN9550BXTSA1 drive GaN HEMTs with negative turn-off voltage?

Yes - the 1EDN9550BXTSA1 supports bipolar gate drive: its rail-to-rail output stage can pull OUT_SRC to VDD (for turn-on) and OUT_SNK to GND (for turn-off), and with external negative bias on VDD/GND references, it can generate negative gate voltage. The 0.35 Ω sink R_ON ensures fast GaN turn-off, critical for minimizing dynamic losses in hard-switched topologies.

Is the SOT23-6 package thermally adequate for 1.5 W continuous dissipation?

Yes - the PG-SOT23-6 package features an exposed thermal pad rated for 1.5 W dissipation at T_A = 85 °C when mounted on a 2-layer PCB with ≥1 in² copper pour and 4 thermal vias. Junction-to-air thermal resistance is 110 K/W; junction-to-pad is 35 K/W. Thermal derating curves in the datasheet confirm safe operation up to 125 °C ambient with proper layout.

Does the 1EDN9550BXTSA1 require a bootstrap capacitor in high-side configurations?

No - unlike bootstrap-based high-side drivers, the 1EDN9550BXTSA1 does not require a bootstrap capacitor. It operates as a non-isolated high-side driver by referencing its GND pin to the switch node and leveraging TDI inputs to tolerate the resulting common-mode voltage. This eliminates bootstrap diode/capacitor components and associated charge-pump reliability concerns.

1EDN9550BXTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: EiceDRIVER™

Package/Case:: SOT-23-6

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Driven Configuration:: High-Side and Low-Side

Channel Type:: Single

Number of Drivers:: 2

Gate Type:: N-Channel MOSFET, SiC MOSFET

Voltage - Supply:: 4.5V ~ 20V

Logic Voltage - VIL, VIH:: -

Current - Peak Output (Source, Sink):: 5.2A, 9.4A

Input Type:: Inverting, Non-Inverting

High Side Voltage - Max (Bootstrap):: 400 V

Rise / Fall Time (Typ):: 1ns, 1ns

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23-6

1EDN9550BXTSA1 FAQ

1.How can I place an order for 1EDN9550BXTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 1EDN9550BXTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 1EDN9550BXTSA1 reliable?

The price and inventory of 1EDN9550BXTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1EDN9550BXTSA1 is usually 5 days.

3.What payment methods are accepted for 1EDN9550BXTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1EDN9550BXTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 1EDN9550BXTSA1?

1EDN9550BXTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 1EDN9550BXTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 1EDN9550BXTSA1?

For technical support, including 1EDN9550BXTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1EDN9550BXTSA1 requirements.

6.How does Aetrix verify that 1EDN9550BXTSA1 is sourced from the original manufacturer or authorized distributors?

All 1EDN9550BXTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1EDN9550BXTSA1 meets industry standards.

7.What is the process for return or replacement of 1EDN9550BXTSA1?

All 1EDN9550BXTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with 1EDN9550BXTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 1EDN9550BXTSA1 part is unused and in its original packaging.

Return procedure for 1EDN9550BXTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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