Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Gate Drivers

Infineon Technologies 2ED2304S06FXLSA1

Name: 2ED2304S06FXLSA1
Brand: Infineon Technologies
SKU: 2ED2304S06FXLSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 2ED2304S06FXLSA1

Manufacturer:: Infineon Technologies

Category:: Gate Drivers

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: 2ED2304S06FXLSA1.pdf

Description:: IC GATE DRVR HALF-BRIDGE 8SOIC

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,077

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

2ED2304S06FXLSA1 from Infineon is a 650 V half-bridge gate driver IC with integrated bootstrap diode (BSD), designed to drive high-side and low-side N-channel MOSFETs or IGBTs in industrial inverters. It delivers ±0.36 A / −0.7 A peak output current, features 10 ns typical propagation delay matching, 75 ns internal dead time with interlock logic, and operates with 10–17.5 V gate supply across both channels. Used in refrigeration compressors and offline AC-DC power supplies.

For engineers reviewing the 2ED2304S06FXLSA1 datasheet, 2ED2304S06FXLSA1 pinout, 2ED2304S06FXLSA1 application, or 2ED2304S06FXLSA1 equivalent, key selection criteria include dV/dt immunity (±50 V/ns), −100 V transient tolerance on VS (300 ns), SOI-based floating channel ruggedness, and 3.3/5/15 V logic compatibility for microcontroller PWM interfacing.

Technical Context

The device implements dual-channel level-shifting using Infineon's thin-film SOI process, enabling robust operation up to 650 V offset between VB and VS. Its integrated interlock logic enforces shoot-through prevention by synchronizing HIN/LIN inputs and embedding 75 ns minimum dead time into the output path.

Dynamic behavior is defined by matched turn-on/off propagation delays (≤60 ns mismatch), fast rise/fall times (48 ns/24 ns typ.), and input filtering (100–250 ns) to suppress noise-induced false triggering. The bootstrap diode (R_BSD = 20–55 Ω, V_F = 1.0–1.2 V) eliminates external diode requirements while supporting self-biased high-side operation.

Key Specifications

Parameter	Value and Actual Design Meaning
VOFFSET max	670 V - maximum sustained voltage difference between VB and VS pins without breakdown
IO+ / IO−	0.36 A / 0.7 A - peak source/sink current capability ensures fast MOSFET/IGBT turn-on and turn-off
Delay matching	≤60 ns - tight propagation delay alignment between HO and LO channels prevents timing skew in bridge switching
Internal dead time	75 ns - fixed hardware-enforced gap between HO and LO transitions eliminates shoot-through risk
dV/dt immunity	±50 V/ns - withstands rapid voltage transients on VS node during inductive commutation
VCC & VBS range	10–17.5 V - dual independent supply rails support flexible gate drive voltage tuning per channel
Logic compatibility	3.3 V / 5 V / 15 V - Schmitt-trigger inputs accept standard MCU-level PWM signals without level shifting

Pinout & Package

2ED2304S06FXLSA1 is housed in a PG-DSO-8 (DSO-8) surface-mount package with exposed thermal pad, optimized for high-voltage isolation and thermal dissipation in motor drive PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
1 LIN	Low-side logic input	In-phase Schmitt-trigger input with internal pull-down; controls LO output directly
2 HIN	High-side logic input	In-phase Schmitt-trigger input with internal pull-down; controls HO output via level shifter
3 VCC	Low-side & logic supply	Provides power for internal logic, UVLO circuitry, and LO driver stage
4 COM	Low-side return reference	Ground reference for VCC, LIN, and LO; must be connected to system power ground
5 LO	Low-side gate driver output	Drives gate of low-side N-MOSFET/IGBT referenced to COM
6 VS	Floating supply return	Reference node for high-side channel; tracks switching node voltage in half-bridge topology
7 HO	High-side gate driver output	Drives gate of high-side N-MOSFET/IGBT referenced to VS
8 VB	Floating supply input	Bootstrap-supplied rail for high-side driver; internally connected to BSD anode

Key Features

Feature	Design Value
Integrated bootstrap diode	Ultra-fast, low R_DS(ON) diode (R_BSD = 20–55 Ω) eliminates external component and reduces board area
SOI-based floating channel	Enables reliable +650 V operation and −100 V transient tolerance on VS (300 ns pulse width)
Hardware interlock logic	Prevents simultaneous HO/LO activation regardless of input timing errors or noise glitches
Matched propagation delay	≤60 ns max mismatch between HO and LO ensures precise synchronous switching in bridge legs
Wide logic supply compatibility	Accepts 3.3 V, 5 V, and 15 V logic levels without external biasing or translation circuits

Applications

Refrigeration Compressor Drives

Industrial Motor Inverters

Use Scenario: Variable-speed control of hermetic compressors in HVAC systems using 3-phase PMSM motors.

IC Role / Device Role / Timing Role: Half-bridge gate driver providing isolated, synchronized HO/LO outputs to switch IGBTs in each inverter leg.

Use Value: Integrated dead time and interlock prevent shoot-through during high-current commutation, improving reliability under frequent start-stop cycles.

Use Scenario: 3-phase inverter for belt-driven industrial pumps operating at 40–60 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side/low-side driver with SOI-isolated floating channel enabling direct connection to 650 V DC bus.

Use Value: −100 V transient tolerance on VS allows stable operation during inductive load reversal without external clamping networks.

Offline Telecom Power Supplies

LED Driver Half-Bridge Converters

Use Scenario: High-efficiency LLC resonant converter in 1–3 kW telecom rectifiers with active clamp circuits.

IC Role / Device Role / Timing Role: Gate driver for high-side/low-side MOSFETs in primary-side half-bridge, referenced to switching node (VS).

Use Value: 10 ns typical delay matching minimizes timing skew, preserving ZVS conditions across wide load ranges.

Use Scenario: Constant-current LED driver for street lighting using asymmetric half-bridge topology with buck-boost regulation.

IC Role / Device Role / Timing Role: Dual-channel driver controlling high-side and low-side switches in high-frequency (100–200 kHz) bridge configuration.

Use Value: Bootstrap diode integration simplifies layout and improves thermal performance in compact, convection-cooled enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRS21844STRPBF	No integrated bootstrap diode; requires external diode and capacitor; lower V_OFFSET (600 V)	Lacks −100 V transient tolerance on VS; less robust in high-dV/dt inverter legs	Preferred where cost sensitivity outweighs layout simplicity and ruggedness needs
UCC27211D	Higher peak current (4 A); no integrated dead time or interlock; requires external timing control	Demands external logic for shoot-through prevention; unsuitable for direct replacement without redesign	Selected when ultra-fast switching and programmable dead time are required over integrated safety

Compared with IRS21844STRPBF and UCC27211D, the 2ED2304S06FXLSA1 provides superior system-level robustness through monolithic dead time, interlock, and SOI-based transient immunity-reducing design validation effort and field failure risk in industrial motor drives.

Availability

2ED2304S06FXLSA1 is available at Aetrix Electronics and suitable for refrigeration compressors, industrial motor inverters, and offline telecom power supplies requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial-grade reliability.

Supply support for 2ED2304S06FXLSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon carbide and SOI-based high-voltage solutions.

The 2ED2304S06FXLSA1 belongs to Infineon's EiceDRIVER™ family of isolated gate drivers, engineered specifically for rugged, high-efficiency half-bridge topologies in motor control and industrial power conversion.

FAQ

What is the maximum allowable negative transient voltage on the VS pin?

The VS pin tolerates −100 V transients for pulses up to 300 ns, enabled by Infineon's thin-film SOI technology. This specification is verified by characterization-not production tested-but is guaranteed by design for industrial inverter applications with inductive loads and fast switching edges.

Does the 2ED2304S06FXLSA1 require external bootstrap components?

No external bootstrap diode is required-the device integrates an ultra-fast, low-R_DS(ON) bootstrap diode between VCC and VB pins. However, an external bootstrap capacitor (typically 0.1–1 µF ceramic) must still be placed between VB and VS to sustain high-side gate drive during continuous conduction.

How does the interlock function prevent shoot-through?

The interlock logic monitors both HIN and LIN inputs in real time and forces HO and LO outputs into high-impedance or low states if both inputs are asserted simultaneously-even for sub-microsecond durations. This hardware-level protection overrides all timing paths, including propagation delays and internal dead time, ensuring absolute shoot-through immunity.

Can the 2ED2304S06FXLSA1 drive SiC MOSFETs?

Yes-it supports gate drive voltages from 10 V to 17.5 V and delivers ±0.36 A/−0.7 A peak current, sufficient for most 650 V-class SiC MOSFETs. However, designers must verify gate loop inductance and slew rate limits, as SiC devices demand faster edge rates and tighter layout control than silicon IGBTs.

2ED2304S06FXLSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

Programmable:: Not Verified

Driven Configuration:: Half-Bridge

Channel Type:: -

Number of Drivers:: -

Gate Type:: -

Voltage - Supply:: -

Logic Voltage - VIL, VIH:: -

Current - Peak Output (Source, Sink):: -

Input Type:: -

High Side Voltage - Max (Bootstrap):: -

Rise / Fall Time (Typ):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-8-910

2ED2304S06FXLSA1 FAQ

1.How can I place an order for 2ED2304S06FXLSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2ED2304S06FXLSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2ED2304S06FXLSA1 reliable?

The price and inventory of 2ED2304S06FXLSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2ED2304S06FXLSA1 is usually 5 days.

3.What payment methods are accepted for 2ED2304S06FXLSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2ED2304S06FXLSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2ED2304S06FXLSA1?

2ED2304S06FXLSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2ED2304S06FXLSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2ED2304S06FXLSA1?

For technical support, including 2ED2304S06FXLSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2ED2304S06FXLSA1 requirements.

6.How does Aetrix verify that 2ED2304S06FXLSA1 is sourced from the original manufacturer or authorized distributors?

All 2ED2304S06FXLSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2ED2304S06FXLSA1 meets industry standards.

7.What is the process for return or replacement of 2ED2304S06FXLSA1?

All 2ED2304S06FXLSA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2ED2304S06FXLSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2ED2304S06FXLSA1 part is unused and in its original packaging.

Return procedure for 2ED2304S06FXLSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…