Infineon Technologies 2ED2410EMXUMA1
- Part No.:
- 2ED2410EMXUMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
- Datasheet:
-
2ED2410EMXUMA1.pdf
- Description:
- IC GATE DRVR HIGH-SIDE 24TSSOP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
2ED2410EMXUMA1 from Infineon Technologies is a single-channel, dual-output smart high-side gate driver for 12 V/24 V automotive power distribution systems. It drives two external N-channel MOSFETs in back-to-back configurations (common-source or common-drain), features dual analog current sense interfaces (CSO1/CSO2), 3 Ω pull-down / 50 Ω pull-up gate drive strength, and integrated overcurrent/short-circuit protection with adjustable I-t wire protection via comparator inputs. Used in fail-operational battery disconnect switches for hybrid/electric vehicles.
For engineers reviewing the 2ED2410EMXUMA1 datasheet, 2ED2410EMXUMA1 pinout, 2ED2410EMXUMA1 application, or 2ED2410EMXUMA1 equivalent, this device supports AEC-Q100 Grade 1 qualification, ISO 26262 hardware element evaluation (PRO-SIL™ certified), dual-channel analog current sensing with externally adjustable gain, and configurable comparator-based protections including overvoltage, undervoltage, and overtemperature.
Technical Context
The device implements two independent high-side gate drivers (GA/SA and GB/SB) with dedicated source-referenced outputs, enabling bidirectional current flow monitoring and fail-safe load disconnection. Its dual analog current sense paths (ISP1/ISN1 and ISP2/ISN2) feed into programmable gain amplifiers, delivering proportional voltage outputs (CSO1/CSO2) for real-time shunt- or VDS-based current measurement.
Protection logic integrates a versatile comparator (CPP/CPN inputs) supporting user-defined thresholds for I-t wire, overvoltage, undervoltage, or overtemperature events - all triggering SAFESTATE mode with diagnostic flagging via DG0/DG1 pins. The internal boost converter (SW/RS/TAB=BC) generates gate supply voltage up to 12 V for driving high-threshold MOSFETs across wide input ranges (3–58 V on VS).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Supply Voltage Range (VS) | 3 V to 58 V - supports direct connection to 12 V/24 V battery rails with extended headroom for transients. |
| Gate Drive Strength | 50 Ω pull-up / 3 Ω pull-down - enables fast MOSFET turn-on (<100 ns typical) and robust turn-off against Miller-induced shoot-through. |
| Current Sense Accuracy | ±2% gain error (typ.) - ensures precise shunt-based current measurement for overcurrent detection and diagnostics. |
| Short-Circuit Response Time | <2 µs - triggers SAFESTATE within 2 µs of fault detection to protect downstream MOSFETs and loads. |
| AEC-Q100 Grade | Grade 1 (−40 °C to +125 °C ambient) - qualified for under-hood automotive power distribution applications. |
| ISO 26262 Support | PRO-SIL™ certified - provides hardware-level evidence for ASIL B/C system integration per Clause 8–13. |
| Operating Temperature | −40 °C to +150 °C junction - enables placement near high-power MOSFETs without derating. |
Pinout & Package
2ED2410EMXUMA1 is housed in a PG-TSDSO-24 exposed-pad package (5.0 mm × 6.0 mm, 0.65 mm pitch), optimized for thermal dissipation in high-current automotive power modules. The TAB pin connects to the internal boost converter output capacitor (BC) and serves as the driver supply rail.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| GA, GB | Gate Driver Outputs | High-side gate drive outputs referenced to SA/SB; drive external N-MOSFET gates with 50 Ω pull-up / 3 Ω pull-down. |
| SA, SB | Source Outputs | Source-referenced outputs connected to MOSFET sources; enable back-to-back topology support and bidirectional current sensing. |
| ISP1/ISN1, ISP2/ISN2 | Current Sense Inputs | Differential inputs for shunt resistor or VDS sensing; support independent current monitoring per channel. |
| CSO1, CSO2 | Current Sense Outputs | Analog voltage outputs proportional to sensed current; gain set by external resistors for flexible scaling. |
| CPP, CPN | Comparator Inputs | Analog inputs for custom protection thresholds (e.g., I-t, VOUT, temperature); trigger SAFESTATE on violation. |
| DG0, DG1 | Diagnostic Outputs | Open-drain status flags indicating fault type (SC, UVLO, CP, VS(UV)) and current direction in ON mode. |
| EN, INA, INB | Control Inputs | Digital enable and channel control signals; EN must be high for operation; INA/INB independently enable channels A/B. |
| VS | Main Supply Input | Wide-range input (3–58 V) powering internal circuitry and boost converter; also serves as voltage reference for sensing. |
| TMP, TMPO | Temperature Interface | NTC/PTC thermistor interface (TMP) and buffered analog output (TMPO) for junction or heatsink temperature monitoring. |
| SW, RS, TAB=BC | Boost Converter | SW drives external inductor; RS monitors boost current; TAB connects to BC capacitor and supplies gate drive voltage. |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent high-side gate drivers | Enables redundant or parallel MOSFET control in fail-operational architectures (e.g., battery isolation switches). |
| Programmable I-t short-circuit protection | Configurable time-current threshold via external RC network on CPP/CPN, preventing nuisance tripping during inrush. |
| Source-referenced current sensing | Eliminates need for isolated amplifiers by measuring current directly at MOSFET source nodes in high-side configuration. |
| Integrated boost converter | Generates stable gate drive voltage (up to 12 V) from wide-input VS rail, enabling use of standard 10 V-gate MOSFETs. |
| SAFESTATE fault response | Simultaneously disables both gate outputs, asserts diagnostic flags, and maintains safe open-circuit state until reset. |
Applications
| Battery Isolation Switch | Redundant Power Distribution Unit |
|---|---|
|
Use Scenario: Disconnecting main traction battery from DC/DC converter or motor inverter during fault conditions. IC Role / Device Role / Timing Role: Dual high-side gate driver controlling back-to-back MOSFETs to break current path while maintaining reverse polarity protection. Use Value: Sub-2 µs short-circuit response prevents thermal runaway; PRO-SIL™ certification accelerates ASIL-B system validation. |
Use Scenario: Providing independent power paths between primary and secondary 12 V batteries in hybrid vehicles. IC Role / Device Role / Timing Role: Enabling bidirectional current flow monitoring and controlled switching between battery banks using common-source topology. Use Value: Dual analog current sense outputs (CSO1/CSO2) allow real-time balancing and fault localization across two independent power domains. |
| Pre-Fuse Box Load Management | OBD-II Diagnostic Power Switch |
|
Use Scenario: Replacing mechanical relays in pre-fuse boxes to manage high-current loads (e.g., HVAC compressors, PTC heaters). IC Role / Device Role / Timing Role: Smart high-side switch with integrated current sensing and overtemperature shutdown for solid-state load control. Use Value: Eliminates contact wear and bounce; ±2% current sense accuracy enables precise energy accounting and predictive maintenance. |
Use Scenario: Controlling power to OBD-II diagnostic port and associated ECUs during vehicle sleep mode to prevent parasitic drain. IC Role / Device Role / Timing Role: Low-quiescent-current high-side switch with EN-controlled SLEEP mode and diagnostic interrupt (INT pin). Use Value: Quiescent current <100 µA in SLEEP mode extends battery life; INT pin alerts ECU of overcurrent or thermal faults without polling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPS27082LRTJR | Single-output, no integrated boost converter; requires external gate supply; lacks dual current sense and comparator-based I-t protection. | Suitable for lower-complexity 12 V loads without fail-operational requirements; not AEC-Q100 qualified. | Select when cost and board space constrain complexity, and ASIL compliance is not required. |
| STGD3HF60M2 | Integrated MOSFET + driver; fixed 60 V rating; no analog current sense outputs or programmable comparator inputs. | Targeted at compact DC/DC secondary side switching; lacks diagnostic flexibility and dual-channel monitoring. | Select for space-constrained designs where integrated FET suffices and analog diagnostics are unnecessary. |
Compared with TPS27082LRTJR and STGD3HF60M2, the 2ED2410EMXUMA1 uniquely combines dual high-side drive, PRO-SIL™ ISO 26262 readiness, dual analog current sense outputs, and user-configurable comparator-based protections - making it the only option qualified for ASIL-B/C battery isolation in EV/HEV architectures.
Availability
2ED2410EMXUMA1 is available at Aetrix Electronics and suitable for battery isolation switches, redundant power distribution units, pre-fuse box load management, and OBD-II diagnostic power switching requiring stable component supply across automotive production lifecycles.
Supply support for 2ED2410EMXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in high-reliability automotive-grade components.
The EiceDRIVER™ APD product line delivers intelligent high-side gate drivers for automotive power distribution, designed specifically for fail-operational battery management, isolation, and load switching in ASIL-certified systems.
FAQ
What is the maximum operating voltage on the VS pin?
The VS pin supports an absolute maximum rating of 60 V and functional operation from 3 V to 58 V. This range accommodates 12 V and 24 V automotive battery systems with transient overvoltage tolerance up to ISO 7637-2 Pulse 5a (58 V). Operation below 3 V disables internal regulators and triggers UVLO.
How does the dual current sense architecture support back-to-back MOSFET topologies?
Each current sense pair (ISP1/ISN1 and ISP2/ISN2) connects to one MOSFET's source/drain path, enabling independent measurement of forward and reverse current in common-source or common-drain configurations. CSO1 and CSO2 provide separate analog outputs scaled to actual current, allowing direction-aware protection and diagnostics.
Can the comparator inputs (CPP/CPN) be used for overtemperature protection without external components?
No - CPP/CPN require external circuitry: TMP connects to an NTC thermistor, and TMPO provides its buffered analog output; a resistor divider from TMPO to CPP sets the overtemperature threshold, while CPN connects to a reference voltage. The comparator then triggers SAFESTATE when TMPO exceeds the threshold.
What happens to GA and GB outputs during SAFESTATE mode?
In SAFESTATE mode, both GA and GB are actively pulled low through their 3 Ω pull-down networks, forcing connected MOSFETs fully OFF. Simultaneously, SA and SB remain floating (not driven), ensuring no current path remains. This behavior is hardware-latched and persists until EN is cycled low-then-high to reset the device.
2ED2410EMXUMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- High-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 3V ~ 58V
- Logic Voltage - VIL, VIH:
- 0.7V, 2.5V
- Current - Peak Output (Source, Sink):
- 175mA, 1.4A (Typ)
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 7µs, 2µs
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TSDSO-24
2ED2410EMXUMA1 FAQ
1.How can I place an order for 2ED2410EMXUMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2ED2410EMXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2ED2410EMXUMA1 reliable?
The price and inventory of 2ED2410EMXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2ED2410EMXUMA1 is usually 5 days.
3.What payment methods are accepted for 2ED2410EMXUMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2ED2410EMXUMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2ED2410EMXUMA1?
2ED2410EMXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2ED2410EMXUMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2ED2410EMXUMA1?
For technical support, including 2ED2410EMXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2ED2410EMXUMA1 requirements.
6.How does Aetrix verify that 2ED2410EMXUMA1 is sourced from the original manufacturer or authorized distributors?
All 2ED2410EMXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2ED2410EMXUMA1 meets industry standards.
7.What is the process for return or replacement of 2ED2410EMXUMA1?
All 2ED2410EMXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2ED2410EMXUMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2ED2410EMXUMA1 part is unused and in its original packaging.
Return procedure for 2ED2410EMXUMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2ED2410EMXUMA1 Tags

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ZXGD3009E6TA
Diodes Incorporated

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1EDN7512BXTSA1
Infineon Technologies
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UCC27517DBVR
Texas Instruments

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MCP1416T-E/OT
Microchip Technology

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MCP1402T-E/OT
Microchip Technology

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MCP1415T-E/OT
Microchip Technology

-
MCP1401T-E/OT
Microchip Technology

-
IX4428NTR
Littelfuse Inc.

-
IRS2005STRPBF
Infineon Technologies

-
IRS2008STRPBF
Infineon Technologies

-
IX4310TTR
Littelfuse Inc.

-
2EDN7524RXTMA1
Infineon Technologies
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