Infineon Technologies 2EDF7235KXUMA1
- Part No.:
- 2EDF7235KXUMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 13-TFLGA
- Datasheet:
-
2EDF7235KXUMA1.pdf
- Description:
- IC GATE DRVR HALF-BRIDG TFLGA-13
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
2EDF7235KXUMA1 from Infineon Technologies is a dual-channel functional isolated MOSFET gate driver IC with coreless transformer isolation, designed for high-side/low-side half-bridge drive in fast-switching power converters. It delivers 4 A source / 8 A sink peak output current per channel, supports up to 10 MHz PWM frequency, and features 37 ns typical propagation delay with ±3 ns channel-to-channel mismatch. It operates across –40°C to +150°C junction temperature and uses a 5 mm × 5 mm PG-TFLGA-13-4 package.
For engineers reviewing the 2EDF7235KXUMA1 datasheet, 2EDF7235KXUMA1 pinout, 2EDF7235KXUMA1 application, or 2EDF7235KXUMA1 equivalent, this device is selected for high-efficiency SMPS, synchronous rectification, and industrial motor drives where precise timing, robust CMTI (>150 V/ns), and functional isolation are required.
Technical Context
The 2EDF7235KXUMA1 implements two independent galvanically isolated gate driver channels using coreless transformer (CT) technology for input-to-output signal transmission. Its functional isolation rating is verified by 1.5 kVDC production test for 10 ms, and channel-to-channel isolation is confirmed at 0.65 kVDC for 10 ms in the LGA-13 package.
It integrates input-side UVLO (4 V threshold), output-side UVLO (4 V or 8 V selectable), and safety self-lockdown logic that disables outputs when VDDI falls below 3 V. The driver accepts CMOS/TTL inputs with internal pull-downs and supports disable control via a dedicated DISABLE pin.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output current | 4 A source / 8 A sink per channel - sufficient to rapidly charge/discharge medium-RDS(on) CoolMOS™/OptiMOS™ gates in <100 ns. |
| Propagation delay | Typ. 37 ns - enables accurate PWM edge alignment in high-frequency LLC and phase-shifted full-bridge topologies. |
| CMTI | >150 V/ns - ensures reliable operation during fast dV/dt transients in 600–900 V bus systems. |
| UVLO threshold (input) | 4 V - prevents erratic switching during brown-out conditions on controller-side 3.3 V supply. |
| Operating temperature | –40°C to +150°C - supports placement near power stages in compact industrial and telecom SMPS designs. |
| Isolation type | Functional isolation - certified per production test at 1.5 kVDC/10 ms, suitable for non-safety-critical isolation barriers. |
| Package | PG-TFLGA-13-4 (5 mm × 5 mm) - surface-mount land grid array enabling high-density PCB layout and low-inductance grounding. |
Pinout & Package
2EDF7235KXUMA1 is housed in a 5 mm × 5 mm PG-TFLGA-13-4 package with exposed thermal pad. Pin assignment follows the LGA-13 top-view configuration shown in Figure 2 of the Infineon datasheet Rev 3.0.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (LGA) | GNDI | Input-side ground reference for all digital inputs and VDDI decoupling - must be connected to low-impedance controller ground plane. |
| 2 (LGA) | INA | CMOS/TTL input for channel A with internal pull-down - directly interfaces standard PWM controllers without external biasing. |
| 3 (LGA) | INB | CMOS/TTL input for channel B with internal pull-down - enables independent control of high-side and low-side switches in half-bridge configurations. |
| 4 (LGA) | SLDON | Selects SLDO activation: floating or VDDI = default 3.3 V mode; tied to GNDI enables >3.5 V input supply - critical for noise margin in noisy environments. |
| 5 (LGA) | VDDI | 3.3 V input supply pin - requires local 100 nF ceramic bypass capacitor to GNDI for stable logic operation. |
| 6 (LGA) | DISABLE | Active-high global disable for both channels - used for fault shutdown or soft-start sequencing in power-up sequences. |
| 7 (LGA) | VDDA | Output-side supply for channel A - powers high-side driver stage; typically derived from bootstrap or auxiliary isolated rail. |
| 8 (LGA) | OUTA | High-current gate drive output for channel A - connects directly to MOSFET gate through external Rg for slew rate control. |
| 9 (LGA) | GNDA | Output-side ground for channel A - must be routed separately from GNDB to minimize cross-talk in high-dV/dt layouts. |
| 10 (LGA) | VDDB | Output-side supply for channel B - powers low-side driver stage; referenced to GNDB, not GNDA. |
| 11 (LGA) | OUTB | High-current gate drive output for channel B - supports direct connection to low-side MOSFET gate with minimal trace inductance. |
| 12 (LGA) | GNDB | Output-side ground for channel B - forms independent return path for low-side gate loop to reduce EMI coupling. |
| 13 (LGA) | N.C. | No connect - left floating per datasheet; no internal connection or function. |
Key Features
| Feature | Design Value |
|---|---|
| Coreless transformer isolation | Enables <37 ns propagation delay and eliminates aging-related drift common in optocouplers - improves long-term timing stability over temperature and lifetime. |
| 18 ns input noise filter | Rejects sub-55 ns glitches on INA/INB without affecting 10 MHz PWM edges - reduces false triggering in electrically noisy industrial environments. |
| Safety self-lockdown | Forces OUTA/OUTB low when VDDI drops below 3 V - prevents shoot-through during controller power loss or reset events. |
| 5 A peak reverse current capability | Handles Miller-induced reverse current during high-dV/dt transitions - avoids gate driver latch-up when driving CoolGaN™ or fast SiC MOSFETs. |
| Independent output supplies | VDDA and VDDB support separate bootstrapped and auxiliary rails - enables asymmetric high-side/low-side voltage biasing for optimized efficiency in LLC resonant converters. |
Applications
| Server & Telecom SMPS | Synchronous Rectification |
|---|---|
|
Use Scenario: 48 V input, 12 V/100 A output DC-DC VRM in AI server racks with strict efficiency and transient response requirements. IC Role / Device Role / Timing Role: Dual-channel gate driver controlling high-side CoolMOS™ CFD7 and low-side OptiMOS™ 5 in interleaved multiphase buck topology. Use Value: 37 ns propagation delay and ±3 ns matching enable precise dead-time control to minimize conduction loss while preventing shoot-through at 1 MHz switching. |
Use Scenario: Secondary-side synchronous rectification in 3.3 kW telecom rectifier with 380 V DC bus and 54 V output. IC Role / Device Role / Timing Role: Isolated driver for parallel SiC Schottky diode replacement using 650 V CoolGaN™ HEMTs in center-tapped forward configuration. Use Value: >150 V/ns CMTI ensures reliable turn-on/turn-off despite 10 kV/μs primary-side transients induced by fast IGBT switching. |
| Industrial UPS Systems | Battery Storage Inverters |
|
Use Scenario: Online double-conversion UPS with 400 V DC link, delivering clean 230 V AC output under dynamic load steps up to 200%. IC Role / Device Role / Timing Role: Half-bridge driver for 1200 V TRENCHSTOP™ IGBTs in inverter stage, paired with 2EDS8265H for reinforced isolation on control side. Use Value: Functional isolation meets IEC 62040-1 Annex A requirements for non-safety-critical control circuits, reducing BOM cost versus reinforced alternatives. |
Use Scenario: Bi-directional 10 kW battery energy storage system (BESS) inverter interfacing 800 V LiFePO₄ stack with grid. IC Role / Device Role / Timing Role: Gate driver for 750 V CoolSiC™ MOSFETs in three-level NPC topology operating at 30 kHz with active neutral-point balancing. Use Value: Independent VDDA/VDDB supplies allow separate 15 V high-side and 12 V low-side gate bias - optimizing RDS(on) conduction loss and switching loss trade-off. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel functional isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2EDF7275KXUMA1 | Same LGA-13 package and 4 A/8 A drive strength, but 7.5 ns shorter propagation delay (30 ns typ.) and 4 V UVLO only. | Targeted at ultra-high-frequency resonant converters (>2 MHz) where sub-35 ns timing is mandatory. | Select when minimizing propagation delay variance is prioritized over UVLO flexibility. |
| 2EDF8275KXUMA1 | Identical timing and package, but 8 V input-side UVLO threshold instead of 4 V - higher noise immunity on VDDI rail. | Suitable for systems with unregulated 5 V controller supplies prone to ripple or dropouts. | Choose when VDDI sourcing lacks tight regulation and 4 V UVLO causes nuisance lockout. |
Compared with 2EDF7235KXUMA1, the 2EDF7275KXUMA1 offers tighter timing for MHz-range topologies, while the 2EDF8275KXUMA1 trades lower UVLO threshold for enhanced supply noise tolerance - both retain identical pinout and functional isolation certification.
Availability
2EDF7235KXUMA1 is available at Aetrix Electronics and suitable for server SMPS, telecom rectifiers, and industrial UPS systems requiring stable component supply, JEDEC-qualified industrial reliability, and functional isolation compliance.
Supply support for 2EDF7235KXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon carbide and gallium nitride technologies.
The EiceDRIVER™ 2EDi family targets high-efficiency, high-reliability power conversion systems - specifically engineered to replace optocouplers and pulse transformers in medium- to high-voltage MOSFET/SiC/GaN gate drive applications.
FAQ
What is the maximum recommended switching frequency for 2EDF7235KXUMA1?
The device supports PWM signals up to 10 MHz, verified by propagation delay consistency and output rise/fall time (typ. 12 ns/10 ns). This rating assumes proper PCB layout with minimized gate loop inductance and appropriate external gate resistors to avoid ringing. Operation above 5 MHz requires careful attention to VDDA/VDDB decoupling and thermal management at full output current.
Does 2EDF7235KXUMA1 support bootstrap high-side supply?
Yes - the VDDA pin is designed to accept bootstrapped supply voltages, commonly generated via a diode-capacitor network from the half-bridge switch node. The datasheet confirms compatibility with bootstrap operation in LLC and hard-switched topologies, provided VDDA remains within 4.5 V to 20 V and ripple stays below 1 Vpp to maintain UVLO margin.
Can the DISABLE pin be left unconnected?
No - the DISABLE pin has an internal pull-down resistor, but leaving it floating risks noise-induced false disable events in high-EMI environments. Infineon recommends tying it to GNDI if unused, or actively driving it with a clean logic signal during fault conditions. PCB layout should avoid routing near noisy traces or switching nodes.
Is thermal pad soldering required for 2EDF7235KXUMA1?
Yes - the PG-TFLGA-13-4 package includes an exposed thermal pad that must be soldered to a thermally optimized copper pour on the PCB. Infineon specifies minimum 8×8 mm² thermal pad area with ≥4 thermal vias (0.3 mm diameter) to inner ground planes. Omitting this compromises junction-to-board thermal resistance (RθJB = 12.5 K/W typical), risking thermal shutdown above 125°C ambient.
2EDF7235KXUMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 13-TFLGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel, P-Channel MOSFET
- Voltage - Supply:
- 20V
- Logic Voltage - VIL, VIH:
- -, 1.65V
- Current - Peak Output (Source, Sink):
- 4A, 8A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 6.5ns, 4.5ns
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TFLGA-13-1
2EDF7235KXUMA1 FAQ
1.How can I place an order for 2EDF7235KXUMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDF7235KXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDF7235KXUMA1 reliable?
The price and inventory of 2EDF7235KXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDF7235KXUMA1 is usually 5 days.
3.What payment methods are accepted for 2EDF7235KXUMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDF7235KXUMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2EDF7235KXUMA1?
2EDF7235KXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDF7235KXUMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDF7235KXUMA1?
For technical support, including 2EDF7235KXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDF7235KXUMA1 requirements.
6.How does Aetrix verify that 2EDF7235KXUMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDF7235KXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDF7235KXUMA1 meets industry standards.
7.What is the process for return or replacement of 2EDF7235KXUMA1?
All 2EDF7235KXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDF7235KXUMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDF7235KXUMA1 part is unused and in its original packaging.
Return procedure for 2EDF7235KXUMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDF7235KXUMA1 Tags

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ZXGD3009E6TA
Diodes Incorporated

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1EDN7512BXTSA1
Infineon Technologies
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UCC27517DBVR
Texas Instruments

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MCP1416T-E/OT
Microchip Technology

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MCP1402T-E/OT
Microchip Technology

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MCP1415T-E/OT
Microchip Technology

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MCP1401T-E/OT
Microchip Technology

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IX4428NTR
Littelfuse Inc.

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IRS2005STRPBF
Infineon Technologies

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IRS2008STRPBF
Infineon Technologies

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IX4310TTR
Littelfuse Inc.

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2EDN7524RXTMA1
Infineon Technologies
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