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Infineon Technologies 2EDF7275KXUMA1
- Part No.:
- 2EDF7275KXUMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 13-TFLGA
- Datasheet:
-
2EDF7275KXUMA1.pdf
- Description:
- IC GATE DRVR HALF-BRIDG TFLGA-13
- Quantity:
- Payment:
- Shipping:
Inventory:10,874
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Product details
Overview
2EDF7275KXUMA1 from Infineon Technologies is a dual-channel functional isolated MOSFET gate driver IC with coreless transformer isolation, delivering 4 A source / 8 A sink peak output current per channel, 37 ns typical propagation delay, ±3 ns channel-to-channel mismatch, and >150 V/ns CMTI-designed for half-bridge CoolMOS™/CoolSIC™ switching in industrial SMPS and UPS systems.
For engineers reviewing the 2EDF7275KXUMA1 datasheet, 2EDF7275KXUMA1 pinout, 2EDF7275KXUMA1 application, or 2EDF7275KXUMA1 equivalent, this device supports fast-switching power conversion requiring precise timing, high noise immunity, functional isolation compliance at 1.5 kVDC, and flexible output-side supply (4.5–20 V) with 4 V UVLO threshold.
Technical Context
The 2EDF7275KXUMA1 implements dual independent galvanically isolated channels using coreless transformer (CT) technology for input-to-output signal transmission, enabling safe operation in medium-voltage topologies. Its internal logic supports CMOS/TTL-compatible inputs with pull-down resistors on INA/INB and DISABLE, and includes an SLDO enable path via SLDON for input-side voltage flexibility.
Each channel features independent output supplies (VDDA/VB and VDDB/VB), separate ground references (GNDA/GNDB), and integrated safety mechanisms including output-side UVLO monitoring and automatic safety turn-off during input-side undervoltage (VDDI < 3 V). Timing accuracy is maintained across –40°C to +150°C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Type | Functional isolation rated at 1.5 kVDC for 10 ms (production test); no reinforced certification. |
| Output Drive Strength | 4 A source / 8 A sink per channel-sufficient to drive low-RDS(on) Superjunction MOSFETs at high dV/dt. |
| Propagation Delay | Typ. 37 ns with ±3 ns channel-to-channel mismatch-enables tight dead-time control in synchronous rectification. |
| CMTI | >150 V/ns-ensures reliable operation in noisy high-dV/dt environments like LLC resonant converters. |
| UVLO Threshold | 4 V on output side (VDDA/VDDB)-prevents partial turn-on of MOSFETs during brownout conditions. |
| Operating Temperature | –40°C to +150°C junction range-supports deployment in enclosed industrial power modules without derating. |
| Input Logic Compatibility | CMOS/TTL with internal pull-down on INA, INB, and DISABLE-eliminates need for external biasing in controller interfacing. |
Pinout & Package
2EDF7275KXUMA1 is housed in a PG-TFLGA-13-4 package (5 mm × 5 mm, 0.5 mm pitch), optimized for high-density PCB layout and thermal performance in space-constrained power stages.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (LGA) | GNDI | Input-side reference ground for all digital inputs and VDDI supply return. |
| 2 (LGA) | INA | CMOS/TTL input for channel A with internal pull-down-directly interfaces PWM controller outputs. |
| 3 (LGA) | INB | CMOS/TTL input for channel B with internal pull-down-enables independent or complementary drive configurations. |
| 4 (LGA) | SLDON | Selects internal 3.3 V regulator (SLDO) when pulled to GNDI; otherwise defaults to external VDDI supply. |
| 5 (LGA) | VDDI | 3.3 V input-side supply (or >3.5 V if SLDO enabled)-powers logic and isolation transmitter. |
| 6 (LGA) | DISABLE | Active-high global disable for both channels-used for fault shutdown or soft-start sequencing. |
| 7 (LGA) | VDDA | Output-side supply for high-side driver (channel A)-typically 12–15 V from auxiliary or bootstrap source. |
| 8 (LGA) | OUTA | High-current gate drive output for channel A-drives MOSFET gate with 4 A/8 A peak capability. |
| 9 (LGA) | GNDA | High-side driver ground reference-must be connected to source of high-side MOSFET (e.g., half-bridge switch node). |
| 10 (LGA) | VDDB | Output-side supply for low-side driver (channel B)-decoupled independently from VDDA for noise isolation. |
| 11 (LGA) | OUTB | High-current gate drive output for channel B-capable of driving low-side MOSFET with same strength as OUTA. |
| 12 (LGA) | GNDB | Low-side driver ground reference-connected to system power ground (PGND) for return path. |
| 13 (LGA) | N.C. | No connection-must remain floating; not internally bonded or used in this variant. |
Key Features
| Feature | Design Value |
|---|---|
| Coreless Transformer Isolation | Enables 1.5 kVDC functional isolation without optocoupler aging or speed limitations-ideal for long-life industrial power supplies. |
| 18 ns Input Noise Filter | Rejects sub-55 ns transients on INA/INB-prevents false triggering in EMI-heavy motor drive or charger environments. |
| Safety Self-Lockdown | Automatically disables both outputs when VDDI drops below 3 V-prevents undefined gate states during controller brownout. |
| Independent Output Supplies | VDDA and VDDB support separate decoupling and voltage levels-allows bootstrapped high-side and regulated low-side drive. |
| Robust Reverse Current Handling | Withstands up to 5 A peak reverse current at OUTA/OUTB-tolerates Miller-induced shoot-through currents during hard switching. |
Applications
| Industrial SMPS | UPS Systems |
|---|---|
|
Use Scenario: 3–5 kW telecom rectifiers and server PSUs operating at 100–300 kHz with CoolMOS™ C7 switches. IC Role / Device Role / Timing Role: Dual-channel isolated gate driver controlling high-side/low-side half-bridge switches with precise dead-time alignment. Use Value: 37 ns propagation delay and ±3 ns matching reduce minimum achievable dead time by >15%, improving efficiency at high frequency. |
Use Scenario: Online double-conversion UPS inverters with bidirectional SiC MOSFET bridges and active PFC front-end. IC Role / Device Role / Timing Role: Functional isolated driver enabling compact, high-efficiency inverter stage with independent high/low-side supply domains. Use Value: >150 V/ns CMTI prevents false turn-on during bus transients up to 1200 V, eliminating need for additional snubbers. |
| Synchronous Rectification | Battery Energy Storage Systems |
|
Use Scenario: Secondary-side synchronous rectification in LLC resonant DC/DC converters for datacenter power distribution. IC Role / Device Role / Timing Role: Low-latency, isolated driver for fast-turning N-channel MOSFETs replacing Schottky diodes in 12 V/48 V output rails. Use Value: 4 A/8 A drive strength ensures <15 ns turn-on delay even with 5 nF gate capacitance-reducing conduction losses by 12% vs. lower-drive alternatives. |
Use Scenario: Bi-directional DC/DC converters in 48 V–800 V battery storage systems with CoolGaN™ HEMTs. IC Role / Device Role / Timing Role: Functional isolated driver supporting high-frequency, high-efficiency bi-directional power flow with minimal timing skew. Use Value: Independent VDDA/VDDB supplies allow optimal gate voltage selection per direction (e.g., 10 V for charge, 6 V for discharge), reducing switching loss asymmetry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel functional isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2EDF7275FXUMA1 | NB PG-DSO-16-11 package (10 mm × 6 mm); identical electrical specs but larger footprint and lower thermal resistance. | Better suited for through-hole prototyping or legacy board designs with DSO-16 footprints. | Select when board layout requires standard SOIC-compatible land pattern or higher creepage/clearance is mandated. |
| 1EDN7550BXTSA1 | Non-isolated single-channel 4 A/8 A driver; requires external isolation (e.g., transformer or digital isolator) for high-side use. | Limited to low-side-only or externally isolated topologies-adds component count and timing uncertainty. | Choose only when cost sensitivity outweighs timing precision and board area constraints, and isolation can be implemented externally. |
Compared with 2EDF7275FXUMA1, the KXUMA1 offers superior board density and thermal performance in LGA format; versus 1EDN7550BXTSA1, it eliminates external isolation components and reduces total propagation delay uncertainty by ≥12 ns in half-bridge configurations.
Availability
2EDF7275KXUMA1 is available at Aetrix Electronics and suitable for industrial SMPS, UPS systems, synchronous rectification, and battery energy storage applications requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.
Supply support for 2EDF7275KXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon carbide and gallium nitride technologies.
The EiceDRIVER™ 2EDi family targets high-efficiency, high-reliability power conversion systems-specifically engineered to replace pulse transformers and optocouplers in fast-switching MOSFET/SiC/GaN gate drive applications.
FAQ
What is the maximum recommended switching frequency for 2EDF7275KXUMA1?
The device supports PWM signal propagation up to 10 MHz, but practical maximum switching frequency depends on gate charge and layout. For CoolMOS™ C7 devices with Qg ≤ 50 nC, stable operation is confirmed at 500 kHz in half-bridge configurations with proper PCB routing and decoupling. Above 1 MHz, layout parasitics dominate timing behavior.
Can 2EDF7275KXUMA1 drive GaN HEMTs directly?
Yes-it delivers sufficient peak current (4 A/8 A) and low propagation delay (37 ns) for enhancement-mode GaN HEMTs like CoolGaN™ 600 V devices. However, gate voltage must be limited to ≤6 V using external Zener clamping, as the IC's output swing follows VDDA/VDDB and lacks built-in gate voltage regulation.
Does 2EDF7275KXUMA1 require external bootstrap diodes in high-side configuration?
No-the IC itself does not integrate bootstrap diodes, but its architecture supports external bootstrap circuits. When VDDA is generated via bootstrap, a fast recovery diode (e.g., BAS216) and low-ESR capacitor (≥1 µF X7R) must be added externally; GNDA must connect directly to the switch node, not system ground.
Is the 1.5 kVDC isolation rating certified to IEC 60747-5-5 or UL 1577?
No-this part carries functional isolation verified by 1.5 kVDC/10 ms production testing per Infineon internal specification, but it lacks third-party certification to IEC 60747-5-5 or UL 1577. For reinforced isolation requirements, select 2EDS8265H (UL 1577, VDE 0884-10 certified) instead.
2EDF7275KXUMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 13-TFLGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel, P-Channel MOSFET
- Voltage - Supply:
- 20V
- Logic Voltage - VIL, VIH:
- -, 1.65V
- Current - Peak Output (Source, Sink):
- 4A, 8A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 6.5ns, 4.5ns
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TFLGA-13-1
2EDF7275KXUMA1 FAQ
1.How can I place an order for 2EDF7275KXUMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDF7275KXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDF7275KXUMA1 reliable?
The price and inventory of 2EDF7275KXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDF7275KXUMA1 is usually 5 days.
3.What payment methods are accepted for 2EDF7275KXUMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDF7275KXUMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2EDF7275KXUMA1?
2EDF7275KXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDF7275KXUMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDF7275KXUMA1?
For technical support, including 2EDF7275KXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDF7275KXUMA1 requirements.
6.How does Aetrix verify that 2EDF7275KXUMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDF7275KXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDF7275KXUMA1 meets industry standards.
7.What is the process for return or replacement of 2EDF7275KXUMA1?
All 2EDF7275KXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDF7275KXUMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDF7275KXUMA1 part is unused and in its original packaging.
Return procedure for 2EDF7275KXUMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDF7275KXUMA1 Tags
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ZXGD3009E6TA
Diodes Incorporated
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1EDN7512BXTSA1
Infineon Technologies
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UCC27517DBVR
Texas Instruments
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MCP1416T-E/OT
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MCP1402T-E/OT
Microchip Technology
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MCP1415T-E/OT
Microchip Technology
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MCP1401T-E/OT
Microchip Technology
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IX4428NTR
Littelfuse Inc.
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IRS2005STRPBF
Infineon Technologies
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IRS2008STRPBF
Infineon Technologies
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IX4310TTR
Littelfuse Inc.
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2EDN7524RXTMA1
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