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Infineon Technologies 2EDF8275FXUMA1
- Part No.:
- 2EDF8275FXUMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 16-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
2EDF8275FXUMA1.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 16SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,352
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Product details
Overview
2EDF8275FXUMA1 from Infineon Technologies is a dual-channel functional isolated MOSFET gate driver IC with coreless transformer isolation, 4 A/8 A source/sink output current, 37 ns typical propagation delay, and 8 V output-side UVLO threshold. It drives high-voltage CoolMOS™ and CoolSIC™ switches in half-bridge topologies for industrial SMPS and EV charging systems.
For engineers reviewing the 2EDF8275FXUMA1 datasheet, 2EDF8275FXUMA1 pinout, 2EDF8275FXUMA1 application, or 2EDF8275FXUMA1 equivalent, key selection criteria include functional isolation rating (1.5 kVDC), narrow-body DSO-16 package footprint, channel-to-channel timing mismatch (±3 ns), and compatibility with bootstrapped high-side supply configurations.
Technical Context
This device implements two independent galvanically isolated gate driver channels using coreless transformer (CT) technology, enabling simultaneous high- and low-side drive in half-bridge configurations without cross-conduction risk. Its input logic interface accepts CMOS/TTL signals referenced to GNDI, while outputs drive MOSFET gates referenced to GNDA/GNDB with separate VDDA/VDDB supplies.
The internal SLDO regulator supports VDDI > 3.5 V when SLDON is grounded, and the DISABLE pin provides synchronous shutdown of both channels. Propagation delay variance is tightly controlled at +7/–6 ns over temperature and process, and CMTI exceeds 150 V/ns to maintain signal integrity in noisy power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Type | Functional isolation (1.5 kVDC production test, per DIN V VDE V 0884-10) |
| Output Drive Strength | 4 A source / 8 A sink - sufficient to rapidly charge/discharge gate capacitance of 650 V CoolMOS™ in <100 ns |
| Propagation Delay | 37 ns typ. - enables stable PWM operation up to 10 MHz switching frequency |
| Channel Mismatch | ±3 ns - ensures precise dead-time control between high- and low-side drivers in half-bridge |
| UVLO Threshold | 8 V on output side (VDDA/VDDB) - prevents partial turn-on during brown-out conditions |
| Operating Temperature | –40°C to +150°C junction - qualified for industrial and automotive under-hood environments |
| CMTI | >150 V/ns - maintains logic integrity during fast dV/dt transients across power switches |
Pinout & Package
2EDF8275FXUMA1 is housed in a narrow-body PG-DSO-16-11 package (10 mm × 6 mm, 1.27 mm pitch), RoHS-compliant and JEDEC-qualified for industrial use.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 INA | Channel A input | CMOS/TTL logic input with internal pull-down; controls OUTA activation |
| 2 INB | Channel B input | CMOS/TTL logic input with internal pull-down; controls OUTB activation |
| 3 VDDI | Input-side supply | 3.3 V nominal supply; supports >3.5 V via SLDO when SLDON = GND |
| 4 GNDI | Input ground reference | Common return for all input-side signals and logic |
| 5 DISABLE | Global shutdown control | Active-high logic input disabling both OUTA and OUTB simultaneously |
| 6,7 N.C. | No connect | Internally unconnected; must remain floating per datasheet |
| 8 SLDON | SLDO enable control | Pulled up internally to VDDI; grounding enables SLDO for higher VDDI operation |
| 9–12 VDDA, OUTA, GNDA, N.C. | Channel A output stage | VDDA powers high-side driver; OUTA drives MOSFET gate; GNDA is local output ground |
| 13–16 VDDB, OUTB, GNDB, N.C. | Channel B output stage | VDDB powers low-side driver; OUTB drives MOSFET gate; GNDB is local output ground |
Key Features
| Feature | Design Value |
|---|---|
| Coreless transformer isolation | Eliminates aging and wear-out mechanisms of optocouplers; supports >50-year lifetime in continuous operation |
| 18 ns input noise filter | Rejects sub-18 ns glitches on INA/INB, preventing false triggering in EMI-heavy power converter environments |
| Safety self-lock-down | Automatically disables outputs if input-side UVLO triggers (VDDI < 3 V), preventing undefined gate states |
| 5 A peak reverse current capability | Withstands Miller-induced reverse current during high dV/dt transitions without latch-up or damage |
| Independent output supplies | VDDA and VDDB can be independently set (4.5–20 V), enabling asymmetric bootstrap and auxiliary supply architectures |
Applications
| Industrial SMPS | EV Onboard Charger |
|---|---|
|
Use Scenario: 3.3 kW LLC resonant DC-DC converter in telecom rectifier rack. IC Role / Device Role / Timing Role: Dual-channel functional isolated gate driver controlling high-side CoolSIC™ and low-side OptiMOS™ in synchronous rectification mode. Use Value: ±3 ns channel mismatch enables precise dead-time tuning to minimize body-diode conduction loss and improve efficiency by 0.8% at full load. |
Use Scenario: Bidirectional AC-DC converter in 11 kW EV onboard charger with SiC MOSFETs. IC Role / Device Role / Timing Role: Isolated gate driver for high-frequency (200 kHz) totem-pole PFC stage with independent VDDA/VDDB biasing. Use Value: 150 V/ns CMTI rating prevents false triggering during 10 kV/μs bus transients, eliminating need for external filtering components. |
| Server PSU | Industrial Motor Drive |
|
Use Scenario: 48 V input, 12 V/100 A output VRM in AI server GPU power delivery. IC Role / Device Role / Timing Role: Low-side gate driver for parallel OptiMOS™ power stages with shared GNDB and individual OUTB routing. Use Value: 8 A sink current discharges gate charge in <35 ns, supporting 1 MHz switching and reducing output ripple by 22%. |
Use Scenario: 7.5 kW three-phase inverter driving IPM-based servo motor in CNC machine tool. IC Role / Device Role / Timing Role: Functional isolated driver for high-side IGBTs in 600 V, 30 A bridge leg with bootstrapped VDDA. Use Value: 37 ns propagation delay and tight timing matching allow <150 ns minimum dead time, maximizing torque linearity at low speeds. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel functional isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2EDF7275FXUMA1 | 4 V output-side UVLO threshold instead of 8 V | Better suited for 5 V output rail systems where tighter UVLO margin is acceptable | Select when system uses regulated 5 V auxiliary supply and requires lower UVLO hysteresis |
| 2EDF9275FXUMA1 | 13 V output-side UVLO threshold; same 4 A/8 A drive strength | Targeted at 12–15 V gate drive rails with higher noise immunity margin | Choose for designs using unregulated 12 V aux supplies where wider UVLO window prevents nuisance shutdown |
Compared with 2EDF7275FXUMA1 and 2EDF9275FXUMA1, the 2EDF8275FXUMA1 offers optimal UVLO headroom for 8 V gate drive systems-balancing robustness against brown-out and avoiding premature shutdown in marginally regulated 12 V auxiliary rails.
Availability
2EDF8275FXUMA1 is available at Aetrix Electronics and suitable for industrial SMPS, EV onboard chargers, and server power supplies requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.
Supply support for 2EDF8275FXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.
The EiceDRIVER™ 2EDi family targets high-efficiency, high-reliability power conversion systems-designed specifically for fast-switching MOSFET and SiC applications where timing accuracy, isolation robustness, and thermal resilience are critical.
FAQ
What is the maximum recommended switching frequency for 2EDF8275FXUMA1?
The device supports PWM operation up to 10 MHz, validated by 37 ns typical propagation delay and ±3 ns channel-to-channel mismatch. At 10 MHz, total round-trip delay remains below 100 ns, preserving timing margins in hard-switched topologies like phase-shifted full-bridge converters.
Can 2EDF8275FXUMA1 drive SiC MOSFETs directly?
Yes-it delivers 4 A source / 8 A sink current into capacitive loads, sufficient to drive common 1200 V SiC MOSFETs (e.g., IMW120R045M1H) with gate charge ≤65 nC within 20 ns. Layout must minimize loop inductance to avoid ringing during turn-off.
Does 2EDF8275FXUMA1 require external bootstrap diodes?
No external diode is required for high-side bootstrapping: the IC's VDDA pin accepts externally generated bootstrap voltage (4.5–20 V). However, an external bootstrap capacitor (≥100 nF ceramic) and low-ESR diode are needed on the board to sustain VDDA during high-side conduction.
How is functional isolation verified for this part number?
Per Infineon's datasheet Rev. 2.9, 2EDF8275FXUMA1 undergoes 1.5 kVDC isolation testing for 10 ms during production. This qualifies it for functional isolation per IEC 60747-5-5, suitable for non-safety-critical barrier applications where reinforced isolation is not mandated.
2EDF8275FXUMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 16-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel, P-Channel MOSFET
- Voltage - Supply:
- 20V
- Logic Voltage - VIL, VIH:
- -, 1.65V
- Current - Peak Output (Source, Sink):
- 4A, 8A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 6.5ns, 4.5ns
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-16-11
2EDF8275FXUMA1 FAQ
1.How can I place an order for 2EDF8275FXUMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDF8275FXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDF8275FXUMA1 reliable?
The price and inventory of 2EDF8275FXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDF8275FXUMA1 is usually 5 days.
3.What payment methods are accepted for 2EDF8275FXUMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDF8275FXUMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2EDF8275FXUMA1?
2EDF8275FXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDF8275FXUMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDF8275FXUMA1?
For technical support, including 2EDF8275FXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDF8275FXUMA1 requirements.
6.How does Aetrix verify that 2EDF8275FXUMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDF8275FXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDF8275FXUMA1 meets industry standards.
7.What is the process for return or replacement of 2EDF8275FXUMA1?
All 2EDF8275FXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDF8275FXUMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDF8275FXUMA1 part is unused and in its original packaging.
Return procedure for 2EDF8275FXUMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDF8275FXUMA1 Tags
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ZXGD3009E6TA
Diodes Incorporated
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1EDN7512BXTSA1
Infineon Technologies
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UCC27517DBVR
Texas Instruments
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MCP1416T-E/OT
Microchip Technology
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MCP1402T-E/OT
Microchip Technology
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MCP1415T-E/OT
Microchip Technology
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MCP1401T-E/OT
Microchip Technology
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IX4428NTR
Littelfuse Inc.
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IRS2005STRPBF
Infineon Technologies
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IRS2008STRPBF
Infineon Technologies
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IX4310TTR
Littelfuse Inc.
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2EDN7524RXTMA1
Infineon Technologies
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