Infineon Technologies 2EDF9275FXUMA1

Overview

2EDF9275FXUMA1 from Infineon Technologies is a dual-channel functional isolated MOSFET gate driver IC with coreless transformer isolation, 4 A/8 A source/sink output current, 37 ns typical propagation delay, ±3 ns channel-to-channel mismatch, and 13 V output-side UVLO threshold. It drives high-voltage CoolMOS™ and CoolSIC™ switches in half-bridge topologies for industrial SMPS and EV charging systems.

For engineers reviewing the 2EDF9275FXUMA1 datasheet, 2EDF9275FXUMA1 pinout, 2EDF9275FXUMA1 application, or 2EDF9275FXUMA1 equivalent, key selection criteria include functional isolation rating (1.5 kVDC), narrow-body DSO-16 package compatibility, dual independent channel timing accuracy, and bootstrap-capable high-side drive support in LLC resonant converters.

Technical Context

The 2EDF9275FXUMA1 implements two galvanically isolated gate driver channels using coreless transformer (CT) technology, enabling independent low-side and high-side control without shared ground reference. Its input logic accepts CMOS/TTL signals with internal pull-down resistors on INA and INB, and features a dedicated DISABLE pin that simultaneously disables both outputs.

It supports bootstrap-based high-side supply generation via VDDA and includes safety-critical UVLO monitoring on both input (VDDI ≥ 3.5 V for SLDO activation) and output sides (VDDB/GNDB and VDDA/GNDA), with self-lockdown behavior during input undervoltage events. Propagation delay variance is tightly controlled at +7/–6 ns across temperature and process variation.

Key Specifications

Pinout & Package

2EDF9275FXUMA1 uses the narrow-body PG-DSO-16-11 package (10 mm × 6 mm), optimized for thermal performance and PCB layout density in high-frequency power stages.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel functional isolated gate driver applications.

Compared with 2EDF8275FXUMA1 and 2EDF7275FXUMA1, the 2EDF9275FXUMA1's 13 V UVLO provides wider margin for unregulated or ripple-prone 15 V auxiliary rails in high-power telecom and EV charging systems, reducing risk of premature shutdown during transient loading.

Availability

2EDF9275FXUMA1 is available at Aetrix Electronics and suitable for server power supplies, EV onboard chargers, and industrial motor drives requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for 2EDF9275FXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon carbide and gallium nitride technologies.

The EiceDRIVER™ 2EDi family targets high-efficiency, high-reliability power conversion systems-especially those demanding precise timing, robust isolation, and fast-switching MOSFET/IGBT/GaN drive in SMPS, EV infrastructure, and industrial automation.

FAQ

What is the maximum recommended switching frequency for 2EDF9275FXUMA1?

The device supports PWM signal propagation up to 10 MHz, but practical maximum switching frequency depends on gate charge of the driven MOSFET and layout parasitics. For 4 A/8 A drive strength, it reliably supports 500 kHz–2 MHz operation with CoolMOS™ CFD7 and CoolGaN™ devices in hard-switched and resonant topologies, provided PCB layout minimizes gate loop inductance.

Can 2EDF9275FXUMA1 drive both high-side and low-side switches in a half-bridge without external level shifters?

Yes - its dual-channel functional isolation eliminates the need for external level shifters. Each channel has independent input (INA/INB), output supply (VDDA/VDDB), and ground (GNDA/GNDB) pins, enabling direct connection to controller logic on one side and floating gate nodes on the other, including bootstrap-fed high-side configurations.

Does 2EDF9275FXUMA1 require external bootstrap diodes and capacitors?

No - the IC itself does not integrate bootstrap components, but it is fully compatible with external bootstrap networks. VDDA is designed to accept bootstrapped voltage (e.g., via 1N4148 and 100 nF capacitor), while OUTA provides the necessary drive strength and reverse current capability (up to 5 A) to sustain gate charge during high-side conduction.

How does the DISABLE pin behave during power-up sequences?

The DISABLE pin has an internal pull-down resistor, ensuring both outputs remain disabled until a valid high logic level is applied. This prevents unintended gate turn-on during VDDI ramp-up. When combined with proper sequencing of VDDI before VDDA/VDDB, it guarantees safe start-up without shoot-through risk in half-bridge configurations.