Infineon Technologies 2EDL8023G3CXTMA1

Overview

2EDL8023G3CXTMA1 from Infineon Technologies is a junction-isolated dual-channel gate driver IC for high-side/low-side MOSFET control in synchronous buck, half-bridge, and isolated DC-DC converters. It delivers 3 A source / 5 A sink on high side and 3 A source / 6 A sink on low side, features integrated 120 V bootstrap diode, supports up to 1 MHz switching, and operates from 8–17 V VDD supply. Used in telecom bus converters and Class-D audio amplifiers.

For engineers reviewing the 2EDL8023G3CXTMA1 datasheet, 2EDL8023G3CXTMA1 pinout, 2EDL8023G3CXTMA1 application, or 2EDL8023G3CXTMA1 equivalent, key selection criteria include independent TTL-compatible HI/LI inputs with –10 V to 20 V input tolerance, <6 ns propagation delay matching, UVLO thresholds (VDD: 7.0 V / VHB: 5.75 V), and PG-VSON-10-4 package thermal performance.

Technical Context

This device implements level-shifted dual-channel driving using an internal 120 V-rated bootstrap diode and external bootstrap capacitor to sustain high-side operation. Its independently controlled HI and LI inputs drive HO and LO outputs with matched timing (typ. 2 ns turn-on/off skew) and built-in hysteresis for noise immunity.

The driver integrates synchronous UVLO for both VDD and VHB rails, with 0.5 V hysteresis on VDD and 0.25 V on VHB, plus 5 µs delay and PWM synchronization to prevent marginal gate drive during UVLO release. Output impedances are 0.5 Ω (HS pull-down) and 0.35 Ω (LS pull-down) to suppress dv/dt-induced re-turn-on.

Key Specifications

Pinout & Package

2EDL8023G3CXTMA1 uses the PG-VSON-10-4 package (3 mm × 3 mm, 0.5 mm pitch, exposed thermal pad). This thermally enhanced, RoHS-compliant leadless package supports high-power density layouts and efficient PCB heat spreading via the exposed pad soldered to ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IRS2007MTRPBF and UCC27211DR, 2EDL8023G3CXTMA1 offers superior integration (120 V bootstrap diode, dual UVLO), tighter timing matching, and enhanced ruggedness (–10 V input, negative HS swing), making it optimal for compact, high-frequency, high-reliability industrial and telecom power stages.

Availability

2EDL8023G3CXTMA1 is available at Aetrix Electronics and suitable for telecom bus converters, synchronous rectification in SMPS, Class-D audio amplifiers, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for 2EDL8023G3CXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in high-voltage gate drivers and silicon carbide solutions.

The EiceDRIVER™ 2EDL8x2x product line targets high-efficiency, high-density switched-mode power supplies in datacom, telecom, and industrial applications-designed for robustness, precision timing, and minimal external component count.

FAQ

What is the maximum allowable negative voltage at the HS pin?

The HS pin supports negative voltages down to –(24 – VDD) V. For example, at VDD = 12 V, HS can tolerate up to –12 V. This rating protects against negative transients caused by parasitic inductance during hard switching, ensuring reliable operation without external clamping diodes.

Does 2EDL8023G3CXTMA1 require an external bootstrap diode?

No. The device integrates a 120 V-rated bootstrap diode between VDD and HB pins. This eliminates the need for an external diode, simplifying layout, reducing component count, and improving reliability-provided the external bootstrap capacitor is correctly sized per Infineon's AN2019-07 design guidelines.

How does the UVLO behavior differ between VDD and VHB rails?

VDD UVLO triggers at 7.0 V (±0.2 V) with 0.5 V hysteresis, while VHB UVLO activates at 5.75 V (±0.15 V) with 0.25 V hysteresis. Critically, HO is blocked for 5 µs after VHB UVLO release if HI is high, and only enabled when HI is low-preventing unsafe high-side activation during boot capacitor recharge.

Can HI and LI be driven from different ground domains?

HI and LI share the same VSS reference and are not galvanically isolated. They must be driven from the same ground domain. However, their –10 V to +20 V input tolerance and built-in hysteresis provide strong immunity to ground bounce and noise, supporting robust operation even with moderate ground shifts in high-dv/dt environments.