Infineon Technologies 2EDL8023GXUMA1
- Part No.:
- 2EDL8023GXUMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 8-VDFN Exposed Pad
- Datasheet:
-
2EDL8023GXUMA1.pdf
- Description:
- IC GATE DRVR HI/LOW SIDE 8VDFN
- Quantity:
- Payment:

- Shipping:

Inventory:10,023
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Product details
Overview
2EDL8023GXUMA1 from Infineon is a junction-isolated dual-channel gate driver IC for high-side/low-side MOSFET control in synchronous buck, half-bridge, and isolated DC-DC converters. It delivers 3 A source / 5 A sink on high side and 3 A source / 6 A sink on low side, features integrated 120 V bootstrap diode, supports up to 1 MHz switching, and operates from 8–17 V supply voltage.
For engineers reviewing the 2EDL8023GXUMA1 datasheet, 2EDL8023GXUMA1 pinout, 2EDL8023GXUMA1 application, or 2EDL8023GXUMA1 equivalent, key selection criteria include independent TTL-compatible HI/LI inputs with –10 V to 20 V tolerance, <6 ns propagation delay matching, UVLO thresholds (VDD: 7.0 V typ., VHB: 5.75 V typ.), and VDSON-8 package thermal performance for industrial power stages.
Technical Context
This driver implements level-shifted high-side operation via an on-chip 120 V bootstrap diode and external capacitor, eliminating need for external high-voltage level-shifting circuitry. Its independently controlled HI/LI inputs accept TTL logic regardless of VDD level and include built-in hysteresis for noise immunity.
The device integrates synchronous UVLO for both VDD and VHB rails, with 0.5 V hysteresis on VDD and 0.25 V on VHB, plus 5 µs delay and PWM synchronization to prevent HO activation during marginal boot voltage conditions. Output impedances are ultra-low: 0.5 Ω (HS pull-down) and 0.35 Ω (LS pull-down), minimizing dv/dt-induced false turn-on.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Supply Voltage Range | 8 V to 17 V - ensures stable gate drive across wide input bus variations in telecom/datacom SMPS |
| Peak Source Current | 3 A per channel - sufficient to rapidly charge gate capacitance of medium-power MOSFETs (e.g., Qg = 30 nC @ 10 V) |
| Peak Sink Current | 5 A (HS), 6 A (LS) - enables fast discharge through Miller plateau, reducing switching losses |
| Propagation Delay Matching | <6 ns - maintains volt-second balance in transformer-coupled topologies, preventing core saturation |
| Input Voltage Range | –10 V to +20 V - allows direct interface with analog controllers, isolated gate drivers, or noisy digital sources |
| VDD UVLO Threshold | 7.0 V (typ.) with 0.5 V hysteresis - prevents MOSFET linear-mode operation and thermal runaway |
| Integrated Bootstrap Diode | 120 V rating - eliminates external diode, simplifies layout and improves reliability in high-dV/dt environments |
Pinout & Package
2EDL8023GXUMA1 is housed in a lead-free, RoHS-compliant PG-VDSON-8-4 package (4 mm × 4 mm, 0.85 mm height), featuring an exposed thermal pad for enhanced power dissipation in continuous industrial operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | Gate drive supply rail | Primary 8–17 V supply for internal logic and LS driver; powers 3.3 V regulator for level shifters |
| HB | High-side bootstrap rail | Connects to external bootstrap capacitor; referenced to HS node; supplies HS driver stage |
| HO | High-side gate output | Drives gate of high-side N-channel MOSFET; rated for 5 A sink / 3 A source |
| HS | High-side source connection | Switching node return for HS driver; must be connected directly to MOSFET source |
| HI | High-side input control | TTL-compatible, –10 V to +20 V tolerant; independent control with hysteresis |
| LI | Low-side input control | TTL-compatible, –10 V to +20 V tolerant; independent control with hysteresis |
| VSS | Ground reference | Internal connection to exposed thermal pad; primary return for LS driver and logic |
| LO | Low-side gate output | Drives gate of low-side N-channel MOSFET; rated for 6 A sink / 3 A source |
Key Features
| Feature | Design Value |
|---|---|
| Independent HI/LI control | Enables flexible PWM, phase-shifted, or burst-mode operation without risk of shoot-through |
| On-chip 120 V bootstrap diode | Reduces BOM count and PCB area; eliminates reverse recovery variability of discrete diodes |
| UVLO with synchronized release | Prevents HO activation during marginal VHB; ensures gate drive only resumes when boot voltage is fully established |
| Ultra-low output impedance | 0.5 Ω (HS) / 0.35 Ω (LS) pull-down resistance suppresses dv/dt-induced false turn-on in high-frequency layouts |
| –10 V to +20 V input tolerance | Supports direct interfacing with op-amps, isolated error amplifiers, or microcontrollers without level-shifting buffers |
Applications
| Telecom DC-DC Converters | Isolated Bus Converters |
|---|---|
Use Scenario: 48 V input to 12 V/5 V intermediate bus conversion in 19-inch rack systems with strict efficiency and thermal requirements. IC Role / Device Role / Timing Role: Dual-channel gate driver controlling synchronous rectification in active-clamp forward or LLC resonant topologies. Use Value: 3 A/5 A drive strength and <6 ns delay matching ensure precise dead-time control and minimize conduction losses at 300–500 kHz. | Use Scenario: High-isolation 3 kVAC flyback or forward converter powering auxiliary rails in industrial PLCs and power supplies. IC Role / Device Role / Timing Role: Level-shifted high-side/low-side driver enabling compact transformerless gate drive for primary-side switches. Use Value: Integrated 120 V bootstrap diode and –10 V to +20 V input tolerance simplify isolation barrier design and improve EMI robustness. |
| Synchronous Rectification | Class-D Audio Amplifiers |
Use Scenario: Secondary-side synchronous rectification in 100–300 W AC-DC adapters and server PSUs to replace Schottky diodes. IC Role / Device Role / Timing Role: Low-side dominant driver with fast 6 A sink capability for rapid MOSFET turn-off during zero-voltage switching transitions. Use Value: 0.35 Ω LS pull-down impedance prevents parasitic turn-on from transformer leakage inductance spikes. | Use Scenario: Half-bridge output stage in 100–500 W Class-D audio amplifiers requiring low THD+N and high PSRR. IC Role / Device Role / Timing Role: Precision-matched dual driver ensuring symmetrical rise/fall times and minimal crossover distortion. Use Value: <6 ns delay matching and independent HI/LI control enable accurate PWM timing alignment critical for audio fidelity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side/low-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRS2007PBF | Lower source current (2.5 A), no integrated bootstrap diode, SOIC-8 package | Requires external bootstrap diode and larger layout area; less suitable for space-constrained 1 MHz designs | Preferred where cost sensitivity outweighs integration and thermal performance needs |
| UCC27211DR | Higher source/sink (4 A/4 A), no integrated bootstrap diode, VDD range 5.5–16 V | Lacks on-chip 120 V diode; requires external high-voltage bootstrap solution; better for lower-VDD systems | Chosen when tighter VDD regulation or higher peak current is prioritized over integration simplicity |
Compared with IRS2007PBF and UCC27211DR, 2EDL8023GXUMA1 offers superior integration (120 V diode), tighter delay matching (<6 ns), and broader input voltage tolerance (–10 V to +20 V), making it optimal for high-density, high-reliability telecom and industrial DC-DC modules.
Availability
2EDL8023GXUMA1 is available at Aetrix Electronics and suitable for telecom DC-DC converters, isolated bus converters, and synchronous rectification circuits requiring stable component supply, long-term industrial lifecycle support, and consistent parametric performance across temperature and voltage ranges.
Supply support for 2EDL8023GXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in high-voltage gate drivers and silicon carbide solutions.
2EDL8x2x belongs to Infineon's EiceDRIVER™ family, engineered specifically for high-efficiency, high-frequency switching power supplies in telecom, datacom, and industrial SMPS where integration, robustness, and precision timing are critical.
FAQ
What is the maximum recommended switching frequency for 2EDL8023GXUMA1?
The device supports operation up to 1 MHz, as confirmed by Infineon's characterization under recommended conditions. This limit accounts for propagation delay matching (<6 ns), output drive strength, and internal UVLO synchronization timing. At frequencies above 800 kHz, careful attention to PCB layout, gate resistor selection, and bootstrap capacitor sizing is required to maintain reliable high-side operation.
Does 2EDL8023GXUMA1 require an external bootstrap diode?
No. The part integrates a 120 V rated bootstrap diode within the die, eliminating the need for an external component. This reduces bill-of-materials count, saves PCB area, and improves reliability by removing reverse recovery variability associated with discrete diodes in high-dV/dt half-bridge nodes.
Can HI and LI inputs be driven from different ground domains?
No - HI and LI share the same VSS reference. While each input tolerates –10 V to +20 V relative to VSS, they are not isolated from one another. For differential or isolated control, use the 2EDL812x variant (e.g., 2EDL8123GXUMA1), which provides true differential inputs with inherent shoot-through protection and ±8 V common-mode rejection.
What thermal considerations apply to the VDSON-8 package?
The PG-VDSON-8-4 package uses an exposed thermal pad soldered to a dedicated copper pour on the PCB. To achieve the rated 1.5 W power dissipation at 100°C ambient, a minimum 100 mm² 2-oz copper area with ≥4 thermal vias (0.3 mm diameter) to inner ground planes is required. Junction-to-board thermal resistance is 25°C/W under these conditions.
2EDL8023GXUMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 8-VDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- High-Side and Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 8V ~ 17V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 3A, 3A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 90 V
- Rise / Fall Time (Typ):
- 45ns, 45ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-VDSON-8-4
2EDL8023GXUMA1 FAQ
1.How can I place an order for 2EDL8023GXUMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDL8023GXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDL8023GXUMA1 reliable?
The price and inventory of 2EDL8023GXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDL8023GXUMA1 is usually 5 days.
3.What payment methods are accepted for 2EDL8023GXUMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDL8023GXUMA1 transactions.
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4.How is shipping managed for 2EDL8023GXUMA1?
2EDL8023GXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDL8023GXUMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDL8023GXUMA1?
For technical support, including 2EDL8023GXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDL8023GXUMA1 requirements.
6.How does Aetrix verify that 2EDL8023GXUMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDL8023GXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDL8023GXUMA1 meets industry standards.
7.What is the process for return or replacement of 2EDL8023GXUMA1?
All 2EDL8023GXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDL8023GXUMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDL8023GXUMA1 part is unused and in its original packaging.
Return procedure for 2EDL8023GXUMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDL8023GXUMA1 Tags

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ZXGD3009E6TA
Diodes Incorporated

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1EDN7512BXTSA1
Infineon Technologies
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UCC27517DBVR
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MCP1416T-E/OT
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MCP1402T-E/OT
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MCP1415T-E/OT
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MCP1401T-E/OT
Microchip Technology

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IX4428NTR
Littelfuse Inc.

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IRS2005STRPBF
Infineon Technologies

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IRS2008STRPBF
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IX4310TTR
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2EDN7524RXTMA1
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