Infineon Technologies 2EDL8024G3CXTMA1

Overview

2EDL8024G3CXTMA1 from Infineon Technologies is a junction-isolated dual-channel gate driver IC for high-side/low-side MOSFET control in synchronous buck, half-bridge, and isolated DC-DC converters. It delivers 4 A source / 5 A sink (HS) and 4 A source / 6 A sink (LS), supports 1 MHz switching, features integrated 120 V bootstrap diode, and operates from 8–17 V VDD. Used in telecom bus converters requiring precise timing and shoot-through immunity.

For engineers reviewing the 2EDL8024G3CXTMA1 datasheet, 2EDL8024G3CXTMA1 pinout, 2EDL8024G3CXTMA1 application, or 2EDL8024G3CXTMA1 equivalent, key selection criteria include independent TTL-compatible HI/LI inputs, <6 ns delay matching, -10 V to 20 V input voltage tolerance, UVLO thresholds (VDD: 7.0 V, VHB: 5.75 V), and VSON-10 package thermal performance.

Technical Context

This device implements level-shifted dual-channel driving with independent high-side and low-side control logic-no differential input or inherent shoot-through protection (unlike 2EDL812x variants). The HV level-shifting architecture uses an on-chip 120 V bootstrap diode and external capacitor to sustain HS gate drive under fast dV/dt transients.

Functional behavior follows a direct truth table: HI and LI inputs independently control HO and LO outputs. Propagation delays are matched to ≤6 ns, ensuring volt-second balance in transformer-coupled topologies and preventing core saturation in isolated SMPS designs.

Key Specifications

Pinout & Package

2EDL8024G3CXTMA1 is housed in a RoHS-compliant PG-VSON-10-4 package (3 mm × 3 mm, 0.4 mm pitch), featuring an exposed thermal pad for enhanced power dissipation in high-current gate drive applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with 2EDL8024GXUMA1, the G3C variant offers superior thermal performance in a smaller footprint; versus IRS2004STRPBF, it delivers higher current, integrated bootstrap protection, and broader voltage tolerance-critical for 48 V telecom and high-reliability industrial use.

Availability

2EDL8024G3CXTMA1 is available at Aetrix Electronics and suitable for telecom bus converters, synchronous buck regulators, Class-D audio amplifiers, and industrial half-bridge motor drives requiring stable component supply and long-term lifecycle support.

Supply support for 2EDL8024G3CXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in high-voltage gate drivers and silicon carbide solutions.

The EiceDRIVER™ 2EDL8x2x product line targets high-efficiency, high-frequency switching power supplies in telecom, datacom, and industrial applications-designed for robustness, precision timing, and simplified system integration.

FAQ

What is the maximum allowable negative voltage at the HS pin?

The HS pin tolerates negative voltages down to –(24 – VDD) V. For example, with VDD = 12 V, HS can withstand –12 V. This protects against parasitic inductance-induced negative spikes during fast turn-off, eliminating need for external clamping in most half-bridge layouts.

Does 2EDL8024G3CXTMA1 require external bootstrap diode?

No. It integrates a 120 V-rated bootstrap diode, removing the need for external diode placement and reducing layout complexity. This also avoids reverse recovery issues associated with discrete diodes, improving reliability in high-dV/dt environments.

How does the UVLO synchronization prevent false high-side turn-on?

Upon UVLO release, HO remains blocked until HI is low. Only when HI transitions low *after* UVLO recovery does HO become active. This ensures the high-side FET never turns on with marginal gate voltage-preventing linear-mode conduction and thermal stress during brown-out recovery.

Can LI and HI be driven from different voltage domains?

Yes. Both inputs tolerate -10 V to +20 V independent of VDD, supporting mixed-signal interfaces-for example, 3.3 V MCU GPIO driving LI while analog controller outputs ±5 V signals to HI. Input hysteresis further ensures noise rejection across domains.