Infineon Technologies 2EDL8033G3CXTMA1

Overview

2EDL8033G3CXTMA1 from Infineon Technologies is a junction-isolated high-side and low-side gate driver IC designed for half-bridge MOSFET control in industrial power converters. It delivers 3 A source / 6 A sink on the high-side and 4 A source / 6 A sink on the low-side, supports up to 120 V bootstrap voltage, operates from -40 °C to +125 °C, and features independent TTL-compatible HI/LI inputs with -10 V to 20 V input pin tolerance.

For engineers reviewing the 2EDL8033G3CXTMA1 datasheet, 2EDL8033G3CXTMA1 pinout, 2EDL8033G3CXTMA1 application, or 2EDL8033G3CXTMA1 equivalent, key selection criteria include bootstrap voltage rating, output current asymmetry (3 A HS / 4 A LS), SON10 (3×3) package thermal resistance (4.7 K/W), dual UVLO thresholds, and enable functionality integrated into the 10-pin VSON footprint.

Technical Context

The device implements a level-shift architecture using junction isolation to sustain high-side floating operation up to 120 V boot voltage while maintaining precise timing control. Its independent HI and LI inputs allow asynchronous high-side/low-side switching, and integrated bootstrap diode eliminates external discrete diode requirement in most designs.

UVLO protection is implemented separately on both VDD and HB rails, forcing HO and LO low during undervoltage conditions. Propagation delay is under 35 ns with 2 ns typical matching between channels, enabling high-frequency PWM control in Class D amplifiers and telecom DC-DC stages.

Key Specifications

Pinout & Package

2EDL8033G3CXTMA1 is housed in a PG-VSON-10-4 (SON10, 3 mm × 3 mm) thermally enhanced surface-mount package with exposed thermal pad, offering 4.7 K/W junction-to-case thermal resistance for high-power density layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IRS2007MTRPBF and UCC27211DRCR, 2EDL8033G3CXTMA1 offers superior bootstrap integration, higher negative HS voltage tolerance (-12 V), and asymmetric drive optimized for half-bridge efficiency-making it ideal for industrial 100–500 kHz power stages where reliability and component count reduction are critical.

Availability

2EDL8033G3CXTMA1 is available at Aetrix Electronics and suitable for telecom power supplies, Class D audio amplifiers, solar micro-inverters, and industrial DC motor drives requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 2EDL8033G3CXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The EiceDRIVER™ 2EDL803x product line targets high-reliability half-bridge gate driving in industrial and telecom power conversion, emphasizing robustness against voltage transients, thermal resilience, and integration of bootstrap functionality to reduce system-level complexity.

FAQ

What is the purpose of the EN pin on 2EDL8033G3CXTMA1?

The EN (Enable) pin is an active-high logic input that globally enables or disables both high-side and low-side driver outputs. When pulled low, it forces HO and LO to low-impedance states, preventing unintended switching. Leaving EN open or tying it to VDD enables normal operation. In high-noise systems, connecting EN to VDD via a pull-up resistor is recommended to prevent false disable events.

Can 2EDL8033G3CXTMA1 drive GaN HEMTs effectively?

Yes - its 35 ns propagation delay, 2 ns channel matching, and 4 A/6 A sink capability support fast-switching GaN devices. However, due to GaN's lower gate charge and zero-threshold behavior, external gate resistors must be selected to limit dV/dt and prevent oscillation. The -10 V to 20 V input tolerance also accommodates GaN gate drive voltage margins during transient events.

Why does 2EDL8033G3CXTMA1 specify different source currents for HS (3 A) and LS (4 A)?

This asymmetry reflects typical half-bridge usage: the low-side switch conducts continuously during freewheeling, demanding higher sustained gate drive current for optimal conduction loss, while the high-side switch operates with shorter duty cycles and benefits from faster turn-on with moderate current. The 3 A/4 A split balances thermal distribution and optimizes efficiency in real-world converter topologies like active clamp forward and two-switch forward.

Is the integrated bootstrap diode sufficient for all operating conditions?

The integrated diode supports typical bootstrap capacitor recharge in continuous conduction mode at ≤500 kHz. For discontinuous mode, very light loads, or high-duty-cycle applications (>90%), an external Schottky diode may be needed to ensure reliable bootstrap voltage replenishment. Layout best practices - short traces, low-ESR capacitor, and proper grounding - remain essential regardless of diode choice.