Infineon Technologies 2EDL8034G3CXTMA1

Overview

2EDL8034G3CXTMA1 from Infineon Technologies is a junction-isolated dual-channel gate driver IC designed to independently drive high-side and low-side N-channel MOSFETs in half-bridge topologies. It delivers 3 A source / 6 A sink on HO and 4 A source / 6 A sink on LO, supports 120 V bootstrap voltage, operates from -40 °C to +125 °C, and integrates a bootstrap diode for simplified high-side biasing - used in telecom DC-DC converters and solar micro-inverters.

For engineers reviewing the 2EDL8034G3CXTMA1 datasheet, 2EDL8034G3CXTMA1 pinout, 2EDL8034G3CXTMA1 application, or 2EDL8034G3CXTMA1 equivalent, key selection criteria include boot voltage rating (120 V), output current asymmetry (HO: 3 A/6 A; LO: 4 A/6 A), TTL-compatible independent inputs (HI/LI), fast propagation delay (<35 ns), and SON10 (3×3 mm) package with enable functionality.

Technical Context

The device implements level-shifted high-side drive using junction isolation, enabling operation with floating HS node up to 100 V DC phase voltage and 120 V absolute max bootstrap rail. UVLO is implemented separately on VDD and HB-HS rails, forcing outputs low during undervoltage conditions.

Input stage accepts TTL logic levels with -10 V to +20 V common-mode range on HI, LI, and EN pins, supporting robust noise immunity in high-dV/dt environments. Propagation delay matching is tightly controlled at 2 ns typical, critical for minimizing shoot-through risk in synchronous switching applications.

Key Specifications

Pinout & Package

2EDL8034G3CXTMA1 is packaged in PG-VSON-10-4 (SON10, 3 mm × 3 mm), a surface-mount, exposed-pad package optimized for thermal performance and PCB space efficiency in high-density power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IRS2004STRPBF and LM5109BMAX/NOPB, 2EDL8034G3CXTMA1 offers superior current drive asymmetry (3 A/4 A), integrated bootstrap diode, and tighter delay matching - making it optimal for space-constrained, high-efficiency industrial and telecom half-bridge converters requiring robust 100 V-class operation.

Availability

2EDL8034G3CXTMA1 is available at Aetrix Electronics and suitable for telecom power supplies, solar micro-inverters, and Class D audio amplifiers requiring stable component supply, long-term lifecycle assurance, and JEDEC-qualified industrial reliability.

Supply support for 2EDL8034G3CXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in high-voltage gate drivers and silicon carbide solutions.

This part belongs to the EiceDRIVER™ 2EDL803x family, engineered specifically for high-efficiency, high-reliability half-bridge power conversion in industrial, telecom, and renewable energy systems.

FAQ

What is the maximum allowable negative voltage on the HS pin?

The absolute maximum negative voltage on the HS pin is -12 V for repetitive pulses shorter than 100 ns, as specified in the Absolute Maximum Ratings table. This rating enables reliable operation during fast switching transients caused by PCB or MOSFET source inductance, preventing latch-up or breakdown in high-dV/dt environments.

Does 2EDL8034G3CXTMA1 require an external bootstrap diode?

No. The device integrates a bootstrap diode internally, eliminating the need for an external component. This reduces bill-of-materials count, saves PCB area, and improves reliability by removing a potential failure point - confirmed in the datasheet's "Integrated bootstrap diode" feature and functional description section.

Can HI and LI be driven with complementary PWM signals without external dead-time generation?

No. While HI and LI accept independent TTL inputs, the device does not include built-in dead-time logic. Complementary PWM must be generated externally with appropriate dead-time insertion to prevent shoot-through, as emphasized in the Functional Description and Application Information sections of the datasheet.

What is the thermal resistance (R_thJC) of the PG-VSON-10-4 package?

The junction-to-case thermal resistance (R_thJC) for the PG-VSON-10-4 (3 mm × 3 mm) package is 4.7 °C/W, per Table 5 in the datasheet. This value is measured under standardized conditions and supports thermal design for continuous 3 A/4 A output operation at up to 125 °C junction temperature.