Infineon Technologies 2EDL8034G4BXTMA1

Overview

2EDL8034G4BXTMA1 from Infineon Technologies is a junction-isolated dual-channel gate driver IC designed for half-bridge MOSFET control in high-frequency power converters. It delivers 4 A source / 6 A sink high-side and low-side output current, supports up to 120 V bootstrap voltage, operates from -40 °C to +125 °C, and features independent TTL-compatible HI/LI inputs and integrated bootstrap diode - deployed in telecom DC-DC modules and solar micro-inverters.

For engineers reviewing the 2EDL8034G4BXTMA1 datasheet, 2EDL8034G4BXTMA1 pinout, 2EDL8034G4BXTMA1 application, or 2EDL8034G4BXTMA1 equivalent, key selection criteria include boot voltage rating (120 V), output drive strength (4 A/6 A), propagation delay (<35 ns), dual UVLO protection, and SON8 (4×4 mm) package compatibility with industrial thermal and layout constraints.

Technical Context

The 2EDL8034G4BXTMA1 implements a level-shift architecture enabling floating high-side drive via bootstrap operation, with dedicated VHB rail referenced to HS and capable of sustaining 120 V differential between HB and HS. Its input stage accepts -10 V to +20 V common-mode swing on HI/LI pins, ensuring robustness against ground bounce in fast-switching topologies.

It integrates independent undervoltage lockout (UVLO) on both VDD and VHB-HS rails, forcing HO/LO low during supply dropout, and includes an EN pin for system-level enable/disable control - critical for fault-safe operation in Class D amplifiers and active-clamp forward converters.

Key Specifications

Pinout & Package

2EDL8034G4BXTMA1 is housed in PG-VDSON-8-5 (SON8, 4 mm × 4 mm) package with wettable flank terminals for automated optical inspection. The exposed thermal pad enhances thermal performance in high-power density layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IRS2004STRPBF and UCC27211DRCR, the 2EDL8034G4BXTMA1 uniquely combines 120 V boot rating, integrated bootstrap diode, dual UVLO, and 4 A/6 A asymmetrical drive - making it optimal for space-constrained, high-reliability industrial half-bridge designs requiring minimal external components.

Availability

2EDL8034G4BXTMA1 is available at Aetrix Electronics and suitable for telecom power supplies, solar micro-inverters, Class D audio amplifiers, and DC motor drives requiring stable component supply across extended temperature and high-voltage stress conditions.

Supply support for 2EDL8034G4BXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in high-voltage gate drivers and silicon carbide solutions.

The EiceDRIVER™ 2EDL803X product line targets high-efficiency, high-density half-bridge power conversion - engineered for reliability in telecom, renewable energy, and motor control applications demanding tight timing, robust isolation, and thermal resilience.

FAQ

What is the maximum allowable bootstrap capacitor ESR for stable 2EDL8034G4BXTMA1 operation?

The bootstrap capacitor must exhibit ≤50 mΩ ESR at 100 kHz to maintain sufficient voltage hold-up during high-duty-cycle operation. Typical recommended values are 100 nF X7R ceramic with 0805 or larger case size; higher capacitance (e.g., 220 nF) improves margin at >500 kHz switching frequencies.

Can the EN pin be left floating, or does it require a pull-up resistor?

The EN pin must not be left floating: it defaults to enabled when open, but noise coupling may cause unintended disable. Infineon recommends pulling EN to VDD via a 10 kΩ resistor in noisy environments; direct tie to VDD is acceptable if EN functionality is unused and board layout is clean.

Does 2EDL8034G4BXTMA1 support driving enhancement-mode GaN HEMTs?

Yes - its 4 A source / 6 A sink capability, <35 ns propagation delay, and -10 V to +20 V input tolerance match GaN FET gate drive requirements. However, external negative turn-off bias (e.g., -3 V) must be added via discrete circuitry since the IC lacks built-in negative gate voltage generation.

How is thermal performance affected when using the PG-VDSON-8-5 package without solder paste on the thermal pad?

Omitting solder on the exposed thermal pad increases R_thJC from 4.6 °C/W to >12 °C/W, risking junction temperature exceedance above 1.5 W dissipation. Full thermal pad soldering with ≥90% coverage and 0.1 mm stencil thickness is mandatory for rated 4 A/6 A operation at 125 °C ambient.