Infineon Technologies 2EDL8034G4CXTMA1
- Part No.:
- 2EDL8034G4CXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 10-VDFN Exposed Pad
- Datasheet:
-
2EDL8034G4CXTMA1.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 10VDFN
- Quantity:
- Payment:

- Shipping:

Inventory:4,950
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Product details
Overview
2EDL8034G4CXTMA1 from Infineon Technologies is a junction-isolated dual-channel gate driver IC designed for half-bridge MOSFET control in high-frequency power converters. It delivers 4 A source / 6 A sink high-side and low-side output current, supports up to 120 V bootstrap voltage, operates from -40 °C to 125 °C, and features independent TTL-compatible HI/LI inputs with integrated bootstrap diode - deployed in telecom DC-DC converters and solar micro-inverters.
For engineers reviewing the 2EDL8034G4CXTMA1 datasheet, 2EDL8034G4CXTMA1 pinout, 2EDL8034G4CXTMA1 application, or 2EDL8034G4CXTMA1 equivalent, key selection criteria include boot voltage rating (120 V), output drive strength (4 A/6 A), propagation delay (<35 ns), UVLO on both sides, and SON10 (3×3 mm) package compatibility with space-constrained industrial power stages.
Technical Context
The device implements a level-shift architecture enabling floating high-side drive via bootstrap coupling, with dedicated isolated logic inputs (HI/LI) and separate enable (EN) functionality. Its junction-isolation structure eliminates external level-shifting components while maintaining robustness against fast dV/dt transients (≤50 V/ns).
UVLO circuitry independently monitors VDD and VHB-HS rails, forcing HO/LO low during undervoltage conditions. Input pins tolerate -10 V to +20 V common-mode swing, and reverse current capability (-5 A) protects outputs during shoot-through or inductive flyback events.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output current | 4 A source / 6 A sink per channel - enables direct drive of medium-power MOSFETs without external buffers in <1 kW converters. |
| Bootstrap voltage max | 120 V - supports high-side operation in 100 V-class bus applications like telecom rectifiers and active-clamp forward topologies. |
| Propagation delay | <35 ns - ensures precise timing alignment in >500 kHz switching designs such as Class D amplifiers and micro-inverters. |
| Delay matching | 2 ns typical - minimizes dead-time uncertainty between high-side and low-side edges, reducing conduction loss and shoot-through risk. |
| Supply range | 8 V to 17 V - compatible with standard 12 V bias rails and tolerant of brown-out conditions in industrial environments. |
| Operating temperature | -40 °C to 125 °C - qualified for continuous operation in enclosed power modules and outdoor solar optimizer enclosures. |
| Input voltage range | -10 V to +20 V - withstands negative transients during PCB layout coupling or fault conditions without latch-up. |
Pinout & Package
2EDL8034G4CXTMA1 is packaged in PG-VSON-10-4 (SON10, 3 mm × 3 mm), a thermally enhanced surface-mount package with exposed thermal pad for efficient heat dissipation in high-density power boards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | Gate drive supply input | 12 V nominal rail powering internal logic and low-side driver; bypass capacitor required at pin for noise immunity. |
| HB | High-side bootstrap rail | Connects to bootstrap capacitor; supplies floating high-side driver stage up to 120 V above HS potential. |
| HO | High-side gate output | Delivers 4 A/6 A drive current directly to high-side MOSFET gate; referenced to HS node, not ground. |
| HS | High-side source connection | Return path for high-side channel; ties to MOSFET source and defines local reference for HO and HB. |
| HI | High-side input control | TTL-compatible logic input; independent of LI, enabling asymmetric PWM or phase-shifted control schemes. |
| LI | Low-side input control | TTL-compatible logic input; fully decoupled from HI, allowing flexible gate timing and dead-time insertion. |
| VSS | Ground return | Common reference for low-side driver, logic, and EN; must be low-inductance connection to minimize ground bounce. |
| LO | Low-side gate output | Delivers 4 A/6 A drive current to low-side MOSFET gate; referenced to VSS, enabling standard gate drive topology. |
| EN | Enable control input | Active-high logic pin; pulling low disables both outputs; open or tied to VDD enables operation - critical for system safety sequencing. |
| NC | No connect | Pins 5 and 6 in VSON-10 package are unconnected; must remain floating or grounded per layout guidelines to avoid parasitic coupling. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated bootstrap diode | Eliminates external diode component and associated PCB area in bootstrap-based half-bridge designs, reducing BOM count and layout complexity. |
| Independent HI/LI inputs | Enables true independent control of high- and low-side switches - essential for advanced modulation schemes including three-state control and adaptive dead-time adjustment. |
| Dual UVLO protection | Separate undervoltage lockout on VDD and VHB-HS prevents erratic switching during supply sag or bootstrap capacitor discharge, improving system reliability. |
| -5 A reverse current rating | Allows safe handling of reverse gate current during fast turn-off or Miller plateau transitions, preventing output stage damage in hard-switching applications. |
| SON10 (3×3 mm) footprint | Provides 30% smaller board area vs. DSO-8 while maintaining thermal performance (RthJC = 4.7 K/W), ideal for compact DC-DC modules and embedded inverters. |
Applications
| Telecom Half-Bridge Converters | Solar Micro-Inverters |
|---|---|
Use Scenario: 48 V input, 380 V output isolated DC-DC converter in 5G base station power supply. IC Role / Device Role / Timing Role: High-side/low-side gate driver controlling synchronous rectification and primary-side switching in LLC resonant topology. Use Value: 120 V boot rating and 2 ns delay matching ensure stable operation under wide input voltage swings and tight timing margins required by 5G efficiency standards. |
Use Scenario: Single-phase 250 W micro-inverter interfacing PV panel to grid via H-bridge inverter stage. IC Role / Device Role / Timing Role: Dual-channel gate driver enabling bidirectional energy flow and zero-voltage switching in interleaved full-bridge configuration. Use Value: -10 V to +20 V input tolerance and -5 A reverse current capability protect against panel-induced transients and inductive kickback during islanding detection. |
| Class D Audio Amplifiers | Industrial DC Motor Drives |
Use Scenario: 100 W high-fidelity audio amplifier using half-bridge output stage with PWM carrier frequency >300 kHz. IC Role / Device Role / Timing Role: Gate driver delivering fast, matched edge transitions to reduce THD+N and EMI emissions in audio band. Use Value: <35 ns propagation delay and 2 ns matching minimize pulse-width distortion across audio signal cycle, preserving fidelity at high slew rates. |
Use Scenario: Closed-loop 24 V BLDC motor controller in automated warehouse conveyor system. IC Role / Device Role / Timing Role: Half-bridge driver managing commutation sequence and regenerative braking via independent HI/LI control. Use Value: Independent inputs allow real-time dead-time override during fault recovery, and 125 °C junction rating ensures uninterrupted operation in sealed motor enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side/low-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRS2007MTRPBF | Lower 2.5 A/2.5 A drive strength; no integrated bootstrap diode; requires external diode and higher VBS headroom. | Targeted at lower-power (<150 W) audio and lighting drivers; lacks -5 A reverse current rating. | Select when cost sensitivity outweighs drive strength and integration needs; verify external bootstrap design margin. |
| UCC27211DRCR | Higher 4 A/4 A symmetric drive but no integrated bootstrap diode; 100 V max boot voltage; no HS negative voltage rating. | Optimized for high-speed GaN FETs in server PSUs; lacks -12 V HS rating and industrial temp qualification. | Prefer for GaN-based designs requiring <20 ns delay; avoid in 120 V bus or harsh ambient environments. |
Compared with IRS2007MTRPBF and UCC27211DRCR, 2EDL8034G4CXTMA1 uniquely combines 120 V boot capability, integrated bootstrap diode, -5 A reverse current support, and industrial temperature qualification - making it the only option qualified for telecom rectifiers and outdoor solar micro-inverters requiring long-term reliability at full spec.
Availability
2EDL8034G4CXTMA1 is available at Aetrix Electronics and suitable for telecom power supplies, solar micro-inverters, and Class D audio amplifiers requiring stable component supply across multi-year production cycles.
Supply support for 2EDL8034G4CXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.
This part belongs to the EiceDRIVER™ 2EDL803X family, engineered specifically for high-efficiency, high-reliability half-bridge gate driving in industrial and renewable energy systems where robustness, integration, and thermal performance are critical.
FAQ
What is the maximum allowable bootstrap capacitor ESR for stable operation?
The bootstrap capacitor must exhibit ≤50 mΩ ESR at 100 kHz to maintain sufficient voltage hold-up during high-duty-cycle operation. Infineon recommends 100 nF X7R ceramic capacitors with 25 V rating and low-ESR construction - verified in application note AN2022-08 for 2EDL803X devices operating at 500 kHz switching frequency.
Can the EN pin be left floating in a production design?
No - the EN pin must be actively driven high (to VDD) or pulled low via ≥10 kΩ resistor. Floating EN risks unintended disable due to noise coupling, especially in high-dV/dt environments. The datasheet explicitly recommends tying EN to VDD if unused, as confirmed in Section 5.2.3 of Rev. 2.2.
Does the integrated bootstrap diode support continuous conduction mode (CCM) operation?
Yes - the integrated diode is rated for continuous 10 mA average forward current and 1 A peak surge, validated for CCM operation up to 200 kHz in buck-derived topologies. Thermal characterization data in Table 5 confirms junction-to-case resistance remains stable under sustained bootstrap charging duty cycles.
How is the -12 V absolute maximum negative voltage on HS enforced during startup?
The -12 V limit applies to repetitive pulses <100 ns duration, as defined in Table 3 footnote 2. During startup, transient negative excursions below -1 V are clamped by internal protection structures; sustained negative voltage beyond -1 V triggers UVLO on the high-side supply domain, forcing HO low until VHB-HS recovers.
2EDL8034G4CXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 10-VDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel, P-Channel MOSFET
- Voltage - Supply:
- 8V ~ 17V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 4A, 6A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 120 V
- Rise / Fall Time (Typ):
- 4.6ns, 4.4ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-VDSON-10-2
2EDL8034G4CXTMA1 FAQ
1.How can I place an order for 2EDL8034G4CXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDL8034G4CXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDL8034G4CXTMA1 reliable?
The price and inventory of 2EDL8034G4CXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDL8034G4CXTMA1 is usually 5 days.
3.What payment methods are accepted for 2EDL8034G4CXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDL8034G4CXTMA1 transactions.
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4.How is shipping managed for 2EDL8034G4CXTMA1?
2EDL8034G4CXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDL8034G4CXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDL8034G4CXTMA1?
For technical support, including 2EDL8034G4CXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDL8034G4CXTMA1 requirements.
6.How does Aetrix verify that 2EDL8034G4CXTMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDL8034G4CXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDL8034G4CXTMA1 meets industry standards.
7.What is the process for return or replacement of 2EDL8034G4CXTMA1?
All 2EDL8034G4CXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDL8034G4CXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDL8034G4CXTMA1 part is unused and in its original packaging.
Return procedure for 2EDL8034G4CXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDL8034G4CXTMA1 Tags

-
ZXGD3009E6TA
Diodes Incorporated

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1EDN7512BXTSA1
Infineon Technologies
-
UCC27517DBVR
Texas Instruments

-
MCP1416T-E/OT
Microchip Technology

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MCP1402T-E/OT
Microchip Technology

-
MCP1415T-E/OT
Microchip Technology

-
MCP1401T-E/OT
Microchip Technology

-
IX4428NTR
Littelfuse Inc.

-
IRS2005STRPBF
Infineon Technologies

-
IRS2008STRPBF
Infineon Technologies

-
IX4310TTR
Littelfuse Inc.

-
2EDN7524RXTMA1
Infineon Technologies
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