Infineon Technologies 2EDL8113GXUMA1

Overview

2EDL8113GXUMA1 from Infineon Technologies is a dual-channel, high-speed, 650 V half-bridge gate driver IC with integrated bootstrap diode, designed for driving enhancement-mode GaN HEMTs and Si MOSFETs in high-frequency resonant and hard-switching topologies. It features 4 A peak sink/source current, <10 ns propagation delay matching, and independent high-side/low-side inputs with UVLO thresholds of 9.5 V (HS) and 8.5 V (LS).

For engineers reviewing the 2EDL8113GXUMA1 datasheet, 2EDL8113GXUMA1 pinout, 2EDL8113GXUMA1 application, or 2EDL8113GXUMA1 equivalent, key selection criteria include propagation delay matching, bootstrap diode integration, GaN-compatible input logic thresholds, and SOIC-8 package thermal performance under >1 MHz switching conditions.

Technical Context

This gate driver implements independent CMOS-compatible input stages with hysteresis for noise immunity, separate high-side and low-side output stages with matched drive strength, and an integrated fast bootstrap diode enabling compact layout and reduced external component count. The device uses level-shifting circuitry to support floating high-side operation up to +650 V DC bus voltage.

It operates over a junction temperature range of –40 °C to +125 °C, supports input logic voltages down to 3.3 V, and includes interlock logic to prevent shoot-through during simultaneous input transitions. Propagation delays are specified at 25 °C with 15 V supply and 1 nF capacitive load.

Key Specifications

Pinout & Package

2EDL8113GXUMA1 is housed in a standard SOIC-8 (300 mil) package with creepage distance ≥5.0 mm and thermal resistance R_thJA = 100 K/W (JEDEC 2S2P board).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed half-bridge gate driver applications.

Compared with UCC27611DR and LM5113MMX/NOPB, 2EDL8113GXUMA1 uniquely combines integrated bootstrap diode, sub-10 ns delay matching, and GaN-optimized input thresholds in a single SOIC-8 package-enabling compact, high-efficiency >500 kHz designs without external timing compensation.

Availability

2EDL8113GXUMA1 is available at Aetrix Electronics and suitable for server power supplies, USB-C PD fast chargers, industrial motor drives, and EV on-board chargers requiring stable component supply across multi-year production cycles.

Supply support for 2EDL8113GXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

2EDL8113GXUMA1 belongs to Infineon's EiceDRIVER™ family of high-performance gate drivers, engineered specifically for next-generation GaN and SiC power systems demanding high speed, precision timing, and system-level integration.

FAQ

What is the maximum recommended switching frequency for 2EDL8113GXUMA1?

The device is characterized for reliable operation up to 2 MHz under typical conditions (V_DD = 15 V, T_j ≤ 100 °C, C_load = 1 nF). Real-world use in GaN-based LLC converters commonly reaches 700–1000 kHz, where propagation delay matching and low output impedance deliver measurable efficiency gains over 500 kHz.

Does 2EDL8113GXUMA1 require an external bootstrap capacitor?

Yes - an external ceramic bootstrap capacitor (typically 100 nF X7R, rated ≥25 V) must be placed between V_BS and COM pins. The integrated diode charges this capacitor during low-side conduction; capacitor value and ESR directly affect high-side supply stability during burst-mode or light-load operation.

Can 2EDL8113GXUMA1 drive silicon carbide (SiC) MOSFETs?

Yes - it supports SiC MOSFETs with gate threshold voltages ≥2.5 V and total gate charge ≤60 nC. Its ±4 A drive strength and <10 ns delay matching are validated with 650 V/30 mΩ SiC devices in hard-switching PFC stages, though gate resistor tuning is required to limit dV/dt-induced Miller turn-on.

Is there a recommended PCB layout guideline for minimizing shoot-through risk?

Place V_SS and COM ground traces with minimal loop area and separate return paths; route IN_H/IN_L differentially away from power nodes; use dedicated 10 µF + 100 nF decoupling on V_DD; and keep bootstrap capacitor within 3 mm of V_BS/COM pins. These practices reduce common-impedance coupling and ensure interlock logic functions correctly under fast dv/dt.