Infineon Technologies 2EDL8123G3CXTMA1

Overview

2EDL8123G3CXTMA1 from Infineon Technologies is a junction-isolated dual-channel gate driver IC for high-side/low-side MOSFET control in synchronous buck, half-bridge, and isolated DC-DC converters. It features differential input with inherent shoot-through protection, 3 A source / 5 A sink (HS) and 3 A source / 6 A sink (LS) drive capability, 120 V on-chip bootstrap diode, and <6 ns propagation delay matching. Used in telecom bus converters and Class-D audio amplifiers.

For engineers reviewing the 2EDL8123G3CXTMA1 datasheet, 2EDL8123G3CXTMA1 pinout, 2EDL8123G3CXTMA1 application, or 2EDL8123G3CXTMA1 equivalent, key selection criteria include differential input robustness against ground bounce (–8 V to +15 V common-mode), UVLO thresholds (VDD: 7.0 V typ., VHB: 5.75 V typ.), and VSON-10 package thermal performance for high-frequency (≤1 MHz) switching.

Technical Context

The 2EDL8123G3CXTMA1 implements a level-shift architecture using an integrated 120 V bootstrap diode and external capacitor to bias the high-side driver. Its differential input stage enforces complementary output behavior via truth-table logic (LI/HI = H/L → LO=H, HO=L), eliminating concurrent conduction.

UVLO is implemented synchronously for both VDD and VHB rails, with 0.5 V hysteresis on VDD and 0.25 V on VHB; a 5 µs delay and PWM synchronization ensure HO only propagates when HI is low at UVLO release - preventing marginal gate drive during startup transients.

Key Specifications

Pinout & Package

2EDL8123G3CXTMA1 is housed in a RoHS-compliant PG-VSON-10-4 package (3 mm × 3 mm, 0.4 mm pitch), featuring an exposed thermal pad for enhanced heat dissipation and optimized high-frequency layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IRS2007MTRPBF and UCC27211D, 2EDL8123G3CXTMA1 delivers superior noise immunity via differential inputs and eliminates one BOM item with its 120 V integrated bootstrap diode - reducing layout sensitivity and improving reliability in high-dI/dt telecom and audio applications.

Availability

2EDL8123G3CXTMA1 is available at Aetrix Electronics and suitable for telecom power supplies, Class-D audio amplifiers, and industrial motor drives requiring stable component supply, JEDEC-qualified industrial temperature operation (–40 °C to +125 °C), and long-term production continuity.

Supply support for 2EDL8123G3CXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial gate drivers, with global manufacturing and qualification to AEC-Q100 and JEDEC standards.

The EiceDRIVER™ 2EDL8x2x product line targets high-efficiency, high-frequency switching topologies in datacom, telecom, and audio applications - emphasizing integration (e.g., 120 V bootstrap diode), noise immunity (differential inputs), and precise timing (sub-6 ns delay matching).

FAQ

What is the maximum recommended switching frequency for 2EDL8123G3CXTMA1?

The device supports operation up to 1 MHz, as confirmed by Infineon's dynamic characterization (Section 4.5, Datasheet Rev. 2.9). At 1 MHz, propagation delay matching remains <6 ns, and thermal performance stays within limits when mounted on a 2-layer PCB with 1-in² copper pour under the exposed pad.

Can 2EDL8123G3CXTMA1 drive SiC or GaN FETs?

Yes - its 3 A source / 5–6 A sink capability, <6 ns delay matching, and 120 V bootstrap diode rating make it suitable for driving 100 V-class SiC and GaN FETs in hard-switched and resonant topologies, provided gate resistors are selected to limit dV/dt per FET datasheet requirements.

Is an external bootstrap diode required with this part?

No - the 2EDL8123G3CXTMA1 integrates a 120 V rated bootstrap diode, eliminating the need for an external diode in most 100 V-class half-bridge applications. External diodes are only recommended if reverse recovery stress exceeds 1 A peak or if >120 V bootstrap voltage is needed.

How does the differential input prevent shoot-through in practice?

The HI/LI differential pair implements hardware-enforced logic: only HI=H/LI=L yields HO=H/LO=L, and HI=L/LI=H yields HO=L/LO=H. Concurrent HI/LI high or low forces both outputs low - physically preventing simultaneous conduction regardless of controller timing errors or noise glitches.