Infineon Technologies 2EDL8123GXUMA1

Overview

2EDL8123GXUMA1 from Infineon is a junction-isolated dual-channel gate driver IC for high-side/low-side MOSFET control in synchronous buck, half-bridge, and isolated DC-DC converters. It features differential input with inherent shoot-through protection, 3 A source / 5 A sink (HS) and 3 A source / 6 A sink (LS) drive capability, 120 V integrated bootstrap diode, and <6 ns propagation delay matching. Used in telecom bus converters requiring precise timing and robust noise immunity.

For engineers reviewing the 2EDL8123GXUMA1 datasheet, 2EDL8123GXUMA1 pinout, 2EDL8123GXUMA1 application, or 2EDL8123GXUMA1 equivalent, key selection criteria include differential input common-mode range (–8 V to +15 V), UVLO thresholds (VDD: 7.0 V typ., VHB: 5.75 V typ.), 1 MHz max switching frequency support, and PG-VDSON-8 package thermal performance.

Technical Context

This device implements a level-shifted architecture using an on-chip 120 V bootstrap diode and external capacitor to drive the high-side channel. Its differential input stage enforces complementary output behavior-HO and LO are never simultaneously high-eliminating shoot-through risk without external logic.

UVLO is implemented synchronously for both VDD and VHB rails, with dedicated hysteresis (0.5 V for VDD, 0.25 V for VHB) and 5 µs delay plus PWM synchronization to prevent HO activation during marginal boot voltage conditions. Propagation delay matching ≤6 ns ensures volt-second balance in transformer-coupled topologies.

Key Specifications

Pinout & Package

2EDL8123GXUMA1 is housed in the PG-VDSON-8-4 package (4 mm × 4 mm, 0.85 mm height, exposed thermal pad). This lead-free, RoHS-compliant package provides low-inductance power paths and enhanced thermal transfer via the bottom-exposed copper pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IRS2007PBF and UCC27211DR, 2EDL8123GXUMA1 delivers superior noise immunity via differential inputs, eliminates external bootstrap diode BOM, and supports higher frequency operation - making it optimal for space-constrained, high-reliability telecom and audio applications.

Availability

2EDL8123GXUMA1 is available at Aetrix Electronics and suitable for telecom power supplies, Class-D audio amplifiers, synchronous rectification modules, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for 2EDL8123GXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and industrial control ICs, with global manufacturing and qualification per JEDEC standards.

The EiceDRIVER™ 2EDL8x2x product line targets high-efficiency, high-density switching power supplies - specifically engineered for differential-input robustness, integrated bootstrap functionality, and sub-6 ns timing precision in telecom and audio applications.

FAQ

What is the maximum allowable negative voltage at the HS pin?

The HS pin withstands negative transients down to –(24 – VDD) V. For example, with VDD = 12 V, HS can tolerate –12 V excursions. This rating protects against negative voltage spikes induced by parasitic inductance during fast current transitions in high-dI/dt converter topologies.

Does 2EDL8123GXUMA1 require an external bootstrap diode?

No. It integrates a 120 V rated bootstrap diode between HB and VDD pins. This eliminates the need for an external diode in most applications, reducing component count and PCB area - confirmed in Infineon's Application Note AN2023-07 for VDSON-8 layout validation.

How does the differential input prevent shoot-through?

The truth table mandates that HO = L when LI = H and HI = H, and LO = L when LI = L and HI = L. Only two valid states produce complementary outputs: (LI=H, HI=L) → LO=H/HO=L and (LI=L, HI=H) → LO=L/HO=H. Simultaneous high outputs are logically impossible.

What is the minimum recommended bootstrap capacitor value?

Infineon specifies ≥100 nF ceramic (X7R, 25 V) for 1 MHz operation with 3 A peak current. The capacitor must supply charge for HS gate drive while maintaining VHB >5.75 V across worst-case duty cycle and switching frequency - verified in Section 7.2.1 of the datasheet Rev. 2.9.