Infineon Technologies 2EDL8124G3CXTMA1

Overview

2EDL8124G3CXTMA1 from Infineon Technologies is a junction-isolated dual-channel gate driver IC for high-side/low-side MOSFET control in synchronous buck, half-bridge, and isolated DC-DC converters. It features differential input with inherent shoot-through protection, 4 A source / 5 A high-side sink / 6 A low-side sink current, 120 V integrated bootstrap diode, and <6 ns propagation delay matching. Used in telecom bus converters requiring robust noise immunity and volt-second balance.

For engineers reviewing the 2EDL8124G3CXTMA1 datasheet, 2EDL8124G3CXTMA1 pinout, 2EDL8124G3CXTMA1 application, or 2EDL8124G3CXTMA1 equivalent, this page delivers verified package mapping (PG-VSON-10-4), confirmed differential-input functional behavior, validated UVLO thresholds (VDD: 7.0 V typ, VHB: 5.75 V typ), and real-world timing constraints including 5 µs high-side UVLO synchronization delay.

Technical Context

The 2EDL8124G3CXTMA1 implements true differential input logic (HI/LI) with –8 V to +15 V common-mode rejection and built-in hysteresis, enabling operation under severe ground bounce and EMI conditions. Its level-shift architecture uses an on-chip 120 V bootstrap diode and supports up to 1 MHz switching frequency.

UVLO is implemented synchronously for both VDD and VHB rails, with dedicated 5 µs delay and PWM-gated HO release to prevent marginal gate drive during boot capacitor recharge. Propagation delay matching is ≤6 ns, ensuring precise volt-second balance to avoid magnetic core saturation in transformer-coupled topologies.

Key Specifications

Pinout & Package

2EDL8124G3CXTMA1 is housed in a PG-VSON-10-4 (3 mm × 3 mm, 0.5 mm pitch) thermally enhanced lead-free RoHS-compliant package with exposed thermal pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IRS21844STRPBF and UCC27211D, the 2EDL8124G3CXTMA1 uniquely combines differential input shoot-through protection, –8 V to +15 V common-mode immunity, and integrated 120 V bootstrap diode - making it optimal for compact, high-reliability telecom and datacom DC-DC modules where layout-induced noise and BOM reduction are critical.

Availability

2EDL8124G3CXTMA1 is available at Aetrix Electronics and suitable for telecom bus converters, synchronous rectification circuits, Class-D audio amplifiers, and industrial half-bridge motor drives requiring stable component supply and long-term production continuity.

Supply support for 2EDL8124G3CXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in high-voltage gate drivers and silicon carbide solutions.

The EiceDRIVER™ 2EDL8x2x product line targets high-efficiency, high-frequency switching converters in telecom and datacom infrastructure, emphasizing noise immunity, integration, and reliability under harsh ground-shift conditions.

FAQ

What is the purpose of the N/C pins on the 2EDL8124G3CXTMA1?

Pins 2 and 6 in the PG-VSON-10-4 package are no-connect die pads with no internal electrical connection. They must remain unconnected or tied to ground per Infineon's layout guidelines to maintain thermal performance and avoid unintended coupling. These pins do not support routing or decoupling functions.

Does the 2EDL8124G3CXTMA1 require an external bootstrap diode?

No. The device integrates a 120 V rated bootstrap diode between VDD and HB pins, eliminating the need for an external diode in most 48 V–60 V bus applications. This reduces BOM count, PCB area, and potential failure modes associated with discrete diode reverse recovery.

How does the differential input prevent shoot-through in the 2EDL8124G3CXTMA1?

The HI and LI inputs form a true differential pair. When both are high (H/H), the internal logic forces both HO and LO low - regardless of previous state - ensuring the high-side and low-side MOSFETs cannot conduct simultaneously. This hardware-level protection operates independently of controller timing or dead-time programming.

What is the significance of the 5 µs delay in the high-side UVLO circuit?

The 5 µs delay synchronizes HO output release with the PWM clock edge after VHB UVLO recovery, preventing partial turn-on during bootstrap capacitor recharge. This avoids linear-mode operation of the high-side MOSFET, which would cause excessive power dissipation and thermal stress in high-frequency converters.