Infineon Technologies 2EDN7424FXTMA1

Overview

2EDN7424FXTMA1 from Infineon Technologies is a dual-channel, 4 A low-side gate driver IC designed for high-frequency switching of MOSFETs, IGBTs, and GaN power devices in industrial SMPS, server/telecom power supplies, and motor control. It delivers 19 ns propagation delay, 2 ns channel-to-channel matching, 6 ns slew rate, 4.2 V UVLO, and rail-to-rail 4 A sink/source capability per channel.

For engineers reviewing the 2EDN7424FXTMA1 datasheet, 2EDN7424FXTMA1 pinout, 2EDN7424FXTMA1 application, or 2EDN7424FXTMA1 equivalent, key selection criteria include propagation delay precision, parallel-channel timing alignment, reverse current robustness (5 A), LV-TTL/CMOS 3.3 V input compatibility, and DSO-8 package thermal performance for high-density power designs.

Technical Context

The device integrates two independent, matched low-side drivers with true rail-to-rail output stages-0.84 Ω high-side on-resistance and 0.66 Ω low-side on-resistance-enabling efficient drive into capacitive gate loads. Its UVLO threshold is fixed at 4.2 V with hysteresis, ensuring reliable MOSFET/GaN protection during brown-out conditions without external supervision.

Input logic supports LV-TTL/CMOS 3.3 V levels with extended voltage tolerance up to +22 V, and enable pins (ENA/ENB) provide per-channel shutdown with priority over input signals. The 1 ns typical channel-to-channel propagation delay mismatch allows safe paralleling for 8 A aggregate drive strength in demanding synchronous rectification or interleaved PFC topologies.

Key Specifications

Pinout & Package

2EDN7424FXTMA1 is packaged in PG-DSO-8-60 (SOIC-8 variant with enhanced thermal pad), a surface-mount, industrial-grade package with exposed thermal pad connected internally to GND. Pin numbering follows standard SOIC orientation (pin 1 marked).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side dual gate driver applications.

Compared with UCC27524ADR and IRS2004STRPBF, 2EDN7424FXTMA1 provides superior timing precision (19 ns vs. 17/60 ns), integrated 4.2 V UVLO, and 5 A reverse current robustness-making it uniquely suited for high-frequency, high-reliability industrial and telecom power systems where component count reduction and fault resilience are critical.

Availability

2EDN7424FXTMA1 is available at Aetrix Electronics and suitable for server SMPS, telecom rectifiers, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and JEDEC-qualified industrial-grade reliability.

Supply support for 2EDN7424FXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in high-voltage and high-efficiency power solutions.

The EiceDRIVER™ family-including 2EDN7424FXTMA1-is engineered specifically for high-performance, high-reliability gate driving in industrial and telecom power conversion, emphasizing timing accuracy, ruggedness, and system-level integration.

FAQ

What is the maximum recommended VDD supply voltage for continuous operation?

The absolute maximum VDD rating is 20 V, but the recommended operating range is 4.5 V to 20 V. For optimal UVLO margin and thermal stability in industrial environments, operation between 12 V and 15 V is advised. Exceeding 20 V risks permanent damage to internal regulators and output stages, as confirmed in Section 5.1 Absolute Maximum Ratings of the datasheet.

Can ENA and ENB be tied together for simultaneous channel enable/disable?

Yes-ENA and ENB may be connected to a common control signal without adverse effects. The internal logic ensures both channels respond identically to the shared enable line, preserving timing alignment. This configuration is explicitly supported in Table 2 (Logic Table) and used in reference designs for interleaved PFC and synchronous rectification.

Is the exposed thermal pad on the DSO-8 package electrically connected, and how should it be handled?

The exposed pad on the PG-DSO-8-60 package is internally connected to GND and must be soldered to a PCB copper pour tied to the main system ground plane. Thermal resistance drops from 62 °C/W (no pad connection) to 42 °C/W (full pad soldering), directly impacting safe continuous current capability and long-term reliability under 4 A load conditions.

Does 2EDN7424FXTMA1 support driving GaN HEMTs with negative gate turn-off requirements?

Yes-the output stage supports rail-to-rail swing down to –10 V on the gate node when driven into a sufficiently low-impedance path, and the inputs tolerate –10 V transients. This enables safe negative turn-off biasing for enhancement-mode GaN devices, as verified in Figure 12 (Output Voltage vs. Load Current) and Section 4.4 Driver Outputs of the datasheet.