Infineon Technologies 2EDN7424RXTMA1
- Part No.:
- 2EDN7424RXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
2EDN7424RXTMA1.pdf
- Description:
- IC GATE DRVR LOW-SIDE 8TSSOP
- Quantity:
- Payment:

- Shipping:

Inventory:4,970
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Product details
Overview
2EDN7424RXTMA1 from Infineon Technologies is a dual-channel 4 A low-side gate driver IC designed for high-frequency switching of MOSFETs, GaN devices, and IGBTs in industrial and telecom SMPS. It delivers 6 ns slew rate, 19 ns propagation delay, ±1 ns channel-to-channel matching, 4.2 V UVLO, and rail-to-rail 4 A sink/source capability per channel.
For engineers reviewing the 2EDN7424RXTMA1 datasheet, 2EDN7424RXTMA1 pinout, 2EDN7424RXTMA1 application, or 2EDN7424RXTMA1 equivalent, key selection criteria include propagation delay precision, reverse current robustness (5 A), LV-TTL/CMOS 3.3 V input compatibility, and TSSOP-8 package thermal performance in high-density power stages.
Technical Context
The device implements two independent, fully buffered low-side driver channels with matched internal timing paths-enabling parallel operation without external skew compensation. Each channel features dedicated enable (ENA/ENB) and input (INA/INB) pins with LV-TTL logic thresholds and +22 V absolute max input voltage rating.
Its UVLO circuit triggers at 4.2 V (typ.) with hysteresis, ensuring safe gate drive disable during brown-out conditions independent of system supervisors. The output stage uses true rail-to-rail bipolar architecture, achieving 0.84 Ω on-resistance sourcing to VDD and 0.66 Ω sinking to GND.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Current | ±4 A per channel-supports fast turn-on/turn-off of high-Qg MOSFETs and GaN HEMTs without external boost. |
| Propagation Delay | 19 ns typ.-enables stable operation up to 1–2 MHz switching frequencies in LLC and PFC topologies. |
| Channel Matching | ±1 ns max-permits paralleling both outputs for 8 A combined drive without shoot-through risk. |
| UVLO Threshold | 4.2 V (direct)-prevents partial turn-on of power devices during supply ramp-up or fault recovery. |
| Slew Rate | 6 ns/V-reduces EMI by limiting dV/dt while maintaining switching speed across wide load ranges. |
| Input Voltage Range | 0 to +22 V-allows direct interface with pulse transformers, optocouplers, and isolated controllers without level-shifting. |
| Reverse Current Rating | 5 A-eliminates need for external Schottky clamps at outputs in synchronous rectifier or bidirectional configurations. |
Pinout & Package
2EDN7424RXTMA1 is housed in a PG-TSSOP-8-1 package (8-pin, 3.0 × 4.4 mm, 0.65 mm pitch) with exposed thermal pad connected to GND. Pin 3 is GND and serves as primary thermal and electrical reference.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 ENA | Enable input A | Active-high logic control: high or open enables INA→OUTA path; low forces OUTA low regardless of INA. |
| 2 INA | Input signal A | LV-TTL/CMOS-compatible gate command (3.3 V logic); drives OUTA when ENA is asserted. |
| 3 GND | Ground reference | Main power and signal return; exposed pad must be soldered to PCB GND plane for thermal and noise integrity. |
| 4 INB | Input signal B | Independent LV-TTL/CMOS gate command for channel B; functionally identical to INA. |
| 5 OUTB | Output B | Low-impedance push-pull driver capable of ±4 A; directly connects to source of low-side MOSFET/GaN switch. |
| 6 VDD | Positive supply | 4.5–20 V operating range powers internal logic and output stage; decoupling capacitor required near pin. |
| 7 OUTA | Output A | Identical to OUTB-fully symmetric dual-channel architecture supports independent or paralleled use. |
| 8 ENB | Enable input B | Independent enable for channel B; allows asymmetric control or safety shutdown of one leg only. |
Key Features
| Feature | Design Value |
|---|---|
| Rail-to-rail output stage | 0.84 Ω sourcing to VDD / 0.66 Ω sinking to GND-minimizes conduction loss and improves gate drive fidelity at high frequency. |
| 1 ns channel-to-channel delay match | Enables safe parallel operation of both outputs for 8 A peak drive without added timing margin or external synchronization. |
| 5 A reverse current robustness | Withstands inductive kickback and body-diode conduction without external protection diodes-reducing BOM count and layout area. |
| +22 V input voltage tolerance | Supports direct connection to pulse transformers and isolated gate drivers without external clamping or attenuation networks. |
| Industry-standard TSSOP-8 pinout | Drop-in replacement for legacy low-side drivers-accelerates design reuse and reduces layout rework in space-constrained SMPS designs. |
Applications
| Server SMPS | Telecom SMPS |
|---|---|
Use Scenario: High-efficiency 48 V–12 V intermediate bus converter in rack-mounted servers. IC Role / Device Role / Timing Role: Dual low-side driver controlling synchronous rectifiers in interleaved LLC resonant topology. Use Value: 19 ns propagation delay and ±1 ns matching ensure precise dead-time control and ZVS maintenance across full load range. | Use Scenario: 3 kW front-end AC–DC rectifier with active PFC and phase-shifted full-bridge DC–DC stage. IC Role / Device Role / Timing Role: Driving low-side switches in dual-phase interleaved boost PFC and secondary-side synchronous rectifiers. Use Value: 4 A per channel sustains >100 A peak gate charge delivery for 650 V CoolMOS™, reducing gate loop inductance sensitivity. |
| Industrial Motor Control | Solar DC–DC Converter |
Use Scenario: 3-phase inverter for servo drives operating at 20 kHz PWM with field-oriented control. IC Role / Device Role / Timing Role: Low-side gate driver for IGBT half-bridges in motor phase legs, with ENA/ENB used for dynamic fault shutdown. Use Value: 4.2 V UVLO prevents erratic switching during undervoltage events caused by line sags or capacitor aging. | Use Scenario: MPPT-enabled DC–DC boost converter stepping up PV array voltage (60–150 V) to 400 V bus. IC Role / Device Role / Timing Role: Driving low-side MOSFETs in high-duty-cycle synchronous boost stage with fast transient response. Use Value: 6 ns slew rate limits EMI generation while maintaining efficiency >98.5% at 25 kHz switching frequency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar low-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UCC27524ADRMR | 4 A dual-channel driver with 17 ns propagation delay, 5 V UVLO, no reverse current rating specified. | Lacks 5 A reverse current robustness; requires external Schottky diodes in synchronous rectifier designs. | Preferred where cost sensitivity outweighs reverse current protection needs and board space permits added components. |
| ADP3418ARZ-REEL7 | 2 A dual-channel driver with 25 ns propagation delay, 10 V UVLO, SOIC-8 package only. | Lower drive strength and slower timing limit use to <500 kHz topologies; unsuitable for GaN or high-Qg MOSFETs. | Appropriate for legacy industrial motor drives with discrete MOSFETs and relaxed switching speed requirements. |
Compared with UCC27524ADRMR and ADP3418ARZ-REEL7, 2EDN7424RXTMA1 provides superior timing precision, higher reverse current immunity, and TSSOP-8 thermal performance-making it optimal for high-density, high-frequency SMPS where reliability and component count reduction are critical.
Availability
2EDN7424RXTMA1 is available at Aetrix Electronics and suitable for server SMPS, telecom power supplies, and solar DC–DC converters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial-grade reliability.
Supply support for 2EDN7424RXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The EiceDRIVER™ product line targets high-performance gate driving for silicon, SiC, and GaN power devices-designed specifically for efficiency-critical, high-frequency power conversion systems including data center, telecom, and renewable energy infrastructure.
FAQ
What is the maximum recommended VDD supply voltage for continuous operation?
The absolute maximum VDD rating is 20 V, but the recommended operating range is 4.5 V to 20 V. For reliable long-term operation with minimal thermal stress, maintain VDD between 12 V and 18 V when driving high-Qg devices at >1 MHz. Exceeding 20 V risks permanent damage to internal regulators and output transistors.
Can ENA and ENB be tied together for single-enable control of both channels?
Yes-ENA and ENB may be connected to a common enable signal without adverse effects. The internal logic ensures both outputs go low simultaneously upon enable deassertion, preserving channel synchronization. This configuration is validated in Infineon's AN2017-05 application note for interleaved PFC designs.
Is the exposed thermal pad on the TSSOP-8 package electrically connected internally?
Yes-the exposed pad is internally connected to GND and must be soldered to a PCB GND plane with ≥4 thermal vias (0.3 mm diameter) for optimal thermal resistance (θJA = 65 °C/W typical). Leaving it floating degrades thermal performance and increases junction temperature by up to 25 °C at full load.
Does the 2EDN7424RXTMA1 support 3.3 V microcontroller GPIOs directly?
Yes-its inputs are LV-TTL compatible with guaranteed recognition of logic high at ≥2.0 V and logic low at ≤0.8 V, making it fully interoperable with 3.3 V MCU GPIOs without level shifters. Input hysteresis of 0.5 V further enhances noise immunity in noisy power environments.
2EDN7424RXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 20V
- Logic Voltage - VIL, VIH:
- 1.2V, 1.9V
- Current - Peak Output (Source, Sink):
- 4A, 4A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 6.4ns, 5.4ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TSSOP-8
2EDN7424RXTMA1 FAQ
1.How can I place an order for 2EDN7424RXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDN7424RXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDN7424RXTMA1 reliable?
The price and inventory of 2EDN7424RXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDN7424RXTMA1 is usually 5 days.
3.What payment methods are accepted for 2EDN7424RXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDN7424RXTMA1 transactions.
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4.How is shipping managed for 2EDN7424RXTMA1?
2EDN7424RXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDN7424RXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDN7424RXTMA1?
For technical support, including 2EDN7424RXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDN7424RXTMA1 requirements.
6.How does Aetrix verify that 2EDN7424RXTMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDN7424RXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDN7424RXTMA1 meets industry standards.
7.What is the process for return or replacement of 2EDN7424RXTMA1?
All 2EDN7424RXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDN7424RXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDN7424RXTMA1 part is unused and in its original packaging.
Return procedure for 2EDN7424RXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDN7424RXTMA1 Tags

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ZXGD3009E6TA
Diodes Incorporated

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1EDN7512BXTSA1
Infineon Technologies
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UCC27517DBVR
Texas Instruments

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MCP1416T-E/OT
Microchip Technology

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MCP1402T-E/OT
Microchip Technology

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MCP1415T-E/OT
Microchip Technology

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MCP1401T-E/OT
Microchip Technology

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IX4428NTR
Littelfuse Inc.

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IRS2005STRPBF
Infineon Technologies

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IRS2008STRPBF
Infineon Technologies

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IX4310TTR
Littelfuse Inc.

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2EDN7524RXTMA1
Infineon Technologies
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