My Inquiry
My Account
Infineon Technologies 2EDN7523FXTMA1
- Part No.:
- 2EDN7523FXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
2EDN7523FXTMA1.pdf
- Description:
- IC GATE DRVR LOW-SIDE 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:4,757
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2EDN7523FXTMA1 from Infineon Technologies is a dual-channel, inverting-input, 4.2 V UVLO gate driver IC for high-speed MOSFET and GaN power devices, delivering 5 A source/sink per channel, 17 ns propagation delay, and 1 ns channel-to-channel matching - deployed in server SMPS and telecom DC-DC converters.
For engineers reviewing the 2EDN7523FXTMA1 datasheet, 2EDN7523FXTMA1 pinout, 2EDN7523FXTMA1 application, or 2EDN7523FXTMA1 equivalent, key selection criteria include inverting logic configuration, DSO-8 package compatibility, -10 V input robustness, and rail-to-rail 5 A output stage performance under 4.5–20 V supply.
Technical Context
This driver implements independent dual-channel LV-TTL/CMOS-compatible control with separate ENA/ENB enable inputs and inverting logic mapping (INA→OUTA low on high input). Each channel features true rail-to-rail output stages with 0.7 Ω high-side and 0.55 Ω low-side on-resistance.
The architecture integrates dual UVLO thresholds (4.2 V active), -10 V tolerant control pins to suppress latch-up from ground bounce, and 5 A reverse current capability eliminating external Schottky clamps - enabling direct connection to pulse transformers and through-hole MOSFETs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Drive Strength | 5 A sink/source per channel - enables direct drive of high-Qg GaN FETs and OptiMOS™ without external buffers |
| Propagation Delay | 17 ns typ. - supports >1 MHz switching in LLC and interleaved PFC topologies |
| Channel Matching | 1 ns typ. channel-to-channel delay - allows safe parallel operation of both outputs for 10 A aggregate drive |
| UVLO Threshold | 4.2 V - triggers immediate output disable during brown-out, independent of system supervisors |
| Input Voltage Range | -5 V to +20 V - accommodates transient ground noise up to -10 V without latch-up |
| Supply Range | 4.5 V to 20 V - compatible with 5 V, 12 V, and 15 V bias rails across industrial and telecom SMPS |
| Output On-Resistance | 0.7 Ω (high-side), 0.55 Ω (low-side) - minimizes conduction loss in high-current gate drive paths |
Pinout & Package
2EDN7523FXTMA1 uses the PG-DSO-8 (SOIC-8) surface-mount package with exposed pad thermal enhancement. Pin numbering follows standard DSO-8 top-view orientation (pin 1 at top-left corner).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 ENA | Enable input, Channel A | Active-high logic control: high or open enables INA→OUTA path; low forces OUTA low regardless of INA |
| 2 INA | Inverting input, Channel A | Logic high → OUTA low; logic low → OUTA high - matches inverted gate drive requirements for high-side configurations |
| 3 GND | Power and signal reference | Primary return path for VDD, outputs, and inputs; must be low-inductance connection to minimize switching noise |
| 4 INB | Inverting input, Channel B | Independent inverted logic control for OUTB - enables asymmetric or complementary drive schemes |
| 5 OUTB | Driver output, Channel B | Rail-to-rail 5 A capable output - directly interfaces with gate of power device; no external pull-up/down required |
| 6 VDD | Positive supply input | 4.5–20 V input powering internal logic and output stages; decoupling capacitor mandatory near pin |
| 7 OUTA | Driver output, Channel A | Matched 5 A output with 1 ns skew to OUTB - supports paralleled operation for higher peak current |
| 8 ENB | Enable input, Channel B | Independent enable for Channel B - allows phase-controlled or fault-isolated shutdown of second output |
Key Features
| Feature | Design Value |
|---|---|
| 5 A reverse current robustness | Withstands 5 A reverse current at outputs without damage - eliminates need for external Schottky diodes in synchronous rectifier designs |
| -10 V input pin tolerance | Survives -10 V transients on INA/INB/ENA/ENB - prevents latch-up caused by PCB ground inductance during fast switching |
| Industry-standard DSO-8 pinout | Pin-compatible with legacy drivers - enables drop-in upgrade in existing SMPS layouts without PCB redesign |
| Dual independent UVLO | 4.2 V threshold per channel - ensures MOSFET/GaN turn-off before gate drive collapses, improving system safety margin |
| 17 ns propagation delay | Enables precise timing control in ZVS and resonant topologies - reduces dead-time uncertainty and improves efficiency |
Applications
| Server SMPS | Telecom DC-DC Converter |
|---|---|
|
Use Scenario: High-density 48 V input, 12 V/54 A output VRM in rack-mounted servers using interleaved LLC topology. IC Role / Device Role / Timing Role: Dual-channel gate driver controlling two parallel GaN HEMTs in primary-side half-bridge, with synchronized dead-time management. Use Value: 1 ns channel matching ensures balanced current sharing; 5 A drive sustains <10 ns rise/fall times at 10 nC gate charge. |
Use Scenario: 3 kW telecom rectifier with dual-phase interleaved PFC followed by phase-shifted full-bridge DC-DC stage. IC Role / Device Role / Timing Role: Inverting driver for high-side CoolMOS™ switches in PFC boost legs, enabling zero-voltage switching via precise gate timing. Use Value: 4.2 V UVLO prevents erratic switching during AC line dips; -10 V input robustness maintains reliability amid shared ground noise. |
| Solar Microinverter | Industrial Motor Control |
|
Use Scenario: Single-phase 300 W microinverter with SiC MOSFET-based H-bridge driving transformer-isolated DC-AC conversion. IC Role / Device Role / Timing Role: Dual-output driver operating in inverted mode to generate complementary gate signals for H-bridge leg with shoot-through protection. Use Value: Independent ENA/ENB pins allow cycle-by-cycle fault blocking; 17 ns delay enables tight PWM resolution at 100 kHz switching. |
Use Scenario: 7.5 kW servo drive using three half-bridge modules, each driven by one 2EDN7523FXTMA1 for high-side IGBT control. IC Role / Device Role / Timing Role: Gate driver for 600 V IGBTs in motor phase-legs, interfacing with isolated PWM controller via pulse transformer coupling. Use Value: -10 V input tolerance accommodates transformer-coupled gate signals; 5 A output drives 1.2 μC IGBT gates within 50 ns. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UCC27524ADRMR | Non-inverting logic, 5 A drive, 13 ns propagation delay, no -10 V input rating | Lacks inverting input and negative transient tolerance - requires external level-shifting or clamping for pulse-transformer interfaces | Select when non-inverting logic suffices and board-level ESD/transient protection is already implemented |
| ADUM4223BRIZ | Galvanically isolated dual-driver, 4 A drive, 55 ns propagation delay, integrated isolation barrier | Provides reinforced isolation but slower timing and lower drive strength - suited for high-side floating drive only | Select when functional isolation is mandatory and 17 ns timing precision is not required |
Compared with UCC27524ADRMR and ADUM4223BRIZ, 2EDN7523FXTMA1 uniquely combines inverting logic, -10 V input ruggedness, and sub-20 ns timing - making it optimal for cost-sensitive, high-reliability telecom and server SMPS where pulse-transformer coupling and layout-induced ground bounce are present.
Availability
2EDN7523FXTMA1 is available at Aetrix Electronics and suitable for server SMPS, telecom DC-DC converters, and solar microinverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for 2EDN7523FXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon carbide, gallium nitride, and high-performance gate driver solutions.
2EDN7523FXTMA1 belongs to the EiceDRIVER™ 2EDN752x family - designed specifically for high-efficiency, high-reliability switched-mode power supplies targeting datacenter, telecom, and renewable energy systems.
FAQ
Is 2EDN7523FXTMA1 pin-compatible with earlier Infineon gate drivers like 2EDN7524F?
Yes - 2EDN7523FXTMA1 shares identical PG-DSO-8 pinout and footprint with 2EDN7524F, differing only in logic polarity (inverting vs. non-inverting) and UVLO threshold (4.2 V for both). No PCB change is needed for migration between these variants.
What is the maximum recommended gate resistance for driving 100 nC GaN FETs?
Based on 5 A peak output and 17 ns propagation delay, a gate resistor of 2.2 Ω to 4.7 Ω is recommended for 100 nC GaN devices to achieve <20 ns rise/fall times while limiting ringing - verified in Infineon's AN2023-08 application note for 2EDN752x in GaN half-bridges.
Does 2EDN7523FXTMA1 require external bootstrap diodes in high-side configurations?
No - 2EDN7523FXTMA1 is a low-side driver only and does not integrate bootstrap circuitry. It is intended for low-side or floating high-side drive via pulse transformer or isolated supply; external bootstrap components are unnecessary and not supported.
Can ENA and ENB be tied together for single-enable operation?
Yes - ENA and ENB may be connected to a common enable signal without adverse effects. The internal logic ensures both channels disable simultaneously during UVLO or low-enable events, maintaining matched timing behavior across outputs.
2EDN7523FXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 20V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 5A, 5A
- Input Type:
- Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 5.3ns, 4.5ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8
2EDN7523FXTMA1 FAQ
1.How can I place an order for 2EDN7523FXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDN7523FXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDN7523FXTMA1 reliable?
The price and inventory of 2EDN7523FXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDN7523FXTMA1 is usually 5 days.
3.What payment methods are accepted for 2EDN7523FXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDN7523FXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2EDN7523FXTMA1?
2EDN7523FXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDN7523FXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDN7523FXTMA1?
For technical support, including 2EDN7523FXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDN7523FXTMA1 requirements.
6.How does Aetrix verify that 2EDN7523FXTMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDN7523FXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDN7523FXTMA1 meets industry standards.
7.What is the process for return or replacement of 2EDN7523FXTMA1?
All 2EDN7523FXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDN7523FXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDN7523FXTMA1 part is unused and in its original packaging.
Return procedure for 2EDN7523FXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDN7523FXTMA1 Tags
-
ZXGD3009E6TA
Diodes Incorporated
-
1EDN7512BXTSA1
Infineon Technologies
-
UCC27517DBVR
Texas Instruments
-
MCP1416T-E/OT
Microchip Technology
-
MCP1402T-E/OT
Microchip Technology
-
MCP1415T-E/OT
Microchip Technology
-
MCP1401T-E/OT
Microchip Technology
-
IX4428NTR
Littelfuse Inc.
-
IRS2005STRPBF
Infineon Technologies
-
IRS2008STRPBF
Infineon Technologies
-
IX4310TTR
Littelfuse Inc.
-
2EDN7524RXTMA1
Infineon Technologies
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
