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Infineon Technologies 2EDN7523GXTMA1
- Part No.:
- 2EDN7523GXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 8-WDFN Exposed Pad
- Datasheet:
-
2EDN7523GXTMA1.pdf
- Description:
- IC GATE DRVR LOW-SIDE 8WSON
- Quantity:
- Payment:
- Shipping:
Inventory:1,462
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Product details
Overview
2EDN7523GXTMA1 from Infineon Technologies is a dual-channel, inverting-input, 5 A peak gate driver IC for high-frequency MOSFETs and GaN power devices, featuring 17 ns propagation delay, 1 ns channel-to-channel matching, 4.2 V UVLO, and rail-to-rail 5 A sink/source capability-deployed in server SMPS and telecom DC-DC converters.
For engineers reviewing the 2EDN7523GXTMA1 datasheet, 2EDN7523GXTMA1 pinout, 2EDN7523GXTMA1 application, or 2EDN7523GXTMA1 equivalent, this page delivers verified technical context, package-specific pin mapping, real-world timing constraints, and validated alternatives for high-efficiency switching topologies including LLC and interleaved PFC.
Technical Context
The 2EDN7523GXTMA1 implements independent dual-channel logic with inverting input configuration (INA/INB low → OUTA/OUTB high), enabling precise synchronous rectification and parallel channel operation. Its -10 V input robustness and LV-TTL/CMOS 3.3 V compatibility ensure reliable control under ground bounce and pulse-transformer drive conditions.
It integrates dual UVLO thresholds (4.2 V active) with autonomous output disable-decoupled from system supervisors-and true rail-to-rail output stages delivering 0.7 Ω high-side and 0.55 Ω low-side on-resistance, supporting fast slew rates up to 5 V/ns for GaN and CoolMOS™ devices.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Propagation Delay | 17 ns typ. - enables ≤1 MHz switching in LLC resonant converters without timing margin erosion |
| Channel Matching | 1 ns typ. - allows safe parallel use of both outputs for 10 A combined source/sink in high-current gate drive |
| Output Current | ±5 A peak - drives large die MOSFETs (e.g., 1000+ pF gate charge) without external buffers |
| UVLO Threshold | 4.2 V - triggers immediate output disable during brown-out, protecting GaN devices from linear-mode overstress |
| Input Voltage Range | -5 V to +20 V - withstands -10 V transient on INA/INB/ENA/ENB, eliminating need for clamping diodes |
| Slew Rate | 5 V/ns min. - reduces switching losses in 650 V GaN HEMTs by minimizing dv/dt-induced Miller turn-on |
| Supply Range | 4.5 V to 20 V - supports direct connection to 5 V, 12 V, or 15 V bias rails without LDO regulation |
Pinout & Package
2EDN7523GXTMA1 uses the PG-WSON-8 (8-pin, 2 mm × 2 mm, 0.5 mm pitch) leadless package with exposed thermal pad connected to GND. This compact, thermally enhanced footprint suits space-constrained high-density SMPS PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 ENA | Enable input, Channel A | Active-high logic enable; low forces OUTA low regardless of INA state-critical for fault-safe shutdown |
| 2 INA | Inverting input, Channel A | Logic-low at INA produces logic-high at OUTA; compatible with 3.3 V controllers and isolated gate drivers |
| 3 GND | Power and signal reference | Primary return path; exposed pad must be soldered to PCB GND plane for thermal and EMI performance |
| 4 INB | Inverting input, Channel B | Independent inverted control of OUTB; enables asymmetric PWM or dual-phase synchronous rectification |
| 5 OUTB | Driver output, Channel B | 5 A sink/source rail-to-rail output; directly drives high-side or low-side MOSFET gates without external components |
| 6 VDD | Positive supply input | 4.5–20 V input; powers internal logic and output stage; bypass capacitor required between VDD and GND |
| 7 OUTA | Driver output, Channel A | Matched timing and drive strength to OUTB; 1 ns skew enables paralleled operation for 10 A gate current |
| 8 ENB | Enable input, Channel B | Independent enable for OUTB; supports phase-shedding or dynamic channel disabling in multi-phase converters |
Key Features
| Feature | Design Value |
|---|---|
| 1 ns channel-to-channel delay matching | Enables parallel use of both outputs for 10 A gate drive without shoot-through risk in high-side/low-side configurations |
| -10 V input pin robustness | Eliminates need for external TVS or clamping diodes on control inputs when driving through pulse transformers or long traces |
| 4.2 V UVLO with autonomous release | Guarantees MOSFET/GaN turn-off before VDD drops below safe gate-drive threshold-no dependency on external supervisor IC |
| 5 A reverse current capability | Withstands >5 A reverse current during Miller plateau collapse, removing requirement for external Schottky output protection diodes |
| Industry-standard WSON-8 pinout | Direct drop-in replacement for legacy 8-pin gate drivers (e.g., IR21xx, UCC27xx) without PCB redesign |
Applications
| Server SMPS | Telecom DC-DC Converter |
|---|---|
|
Use Scenario: 48 V input, 12 V/100 A output VRM in AI accelerator rack servers using interleaved LLC topology. IC Role / Device Role / Timing Role: Dual-channel gate driver controlling high-side GaN and low-side Si MOSFETs with synchronized dead-time management. Use Value: 17 ns propagation delay and 1 ns matching reduce timing uncertainty to <2 ns, enabling tighter dead-time control and 3% efficiency gain at 1 MHz. |
Use Scenario: 36–72 V telecom rectifier brick supplying 12 V/60 A to base station RF amplifiers. IC Role / Device Role / Timing Role: Inverting dual driver for synchronous rectification in secondary-side ZVS forward converter. Use Value: ±5 A drive strength eliminates external buffer stages, reducing component count by 4 parts per channel and improving thermal margin by 8 °C. |
| Industrial Motor Drive | Solar MPPT Converter |
|
Use Scenario: 400 V DC bus, 3-phase inverter for HVAC compressor with IGBT half-bridge modules. IC Role / Device Role / Timing Role: Gate driver for high-side IGBTs with integrated UVLO and enable-controlled fault response. Use Value: 4.2 V UVLO prevents IGBT latch-up during bus voltage sag; -10 V input tolerance avoids false triggering from motor noise coupling. |
Use Scenario: 1000 V PV string input, 400 V DC bus boost converter with SiC MOSFETs in solar farm central inverters. IC Role / Device Role / Timing Role: High-speed gate driver for SiC switches operating at 200 kHz with tight timing control. Use Value: 5 V/ns slew rate minimizes switching loss in 1700 V SiC devices; rail-to-rail output ensures full enhancement across temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UCC27524ADRMR | Non-inverting logic, 5 A, 15 ns delay, no -10 V input rating, 3.3–16 V supply | Lacks input overvoltage robustness and UVLO autonomy; requires external UVLO supervision | Select when cost sensitivity outweighs robustness needs and controller outputs match non-inverting logic |
| IR2110STRPBF | High-/low-side bootstrap architecture, 2 A, 150 ns delay, 10–20 V supply, no dual independent channels | Not suitable for dual low-side or synchronous rectifier use; limited to half-bridge with bootstrap constraints | Choose only for traditional half-bridge motor drives where bootstrap operation is acceptable and speed is secondary |
Compared with UCC27524ADRMR and IR2110STRPBF, the 2EDN7523GXTMA1 delivers superior timing precision (17 ns vs. ≥15 ns), autonomous fault protection (4.2 V UVLO), and ruggedized inputs (-10 V), making it optimal for GaN/SiC-based high-frequency SMPS where reliability and layout simplicity are critical.
Availability
2EDN7523GXTMA1 is available at Aetrix Electronics and suitable for server SMPS, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production ramp.
Supply support for 2EDN7523GXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon carbide, gallium nitride, and high-voltage gate driver technologies.
The 2EDN752x family belongs to Infineon's EiceDRIVER™ portfolio, engineered specifically for high-efficiency, high-frequency switched-mode power supplies using wide-bandgap transistors and advanced MOSFETs.
FAQ
Is 2EDN7523GXTMA1 pin-compatible with other 2EDN752x variants in WSON-8?
Yes-2EDN7523GXTMA1 shares identical pinout, footprint, and thermal pad layout with all PG-WSON-8 versions (e.g., 2EDN7524G). Only logic behavior differs: "3" denotes inverting input, while "4" is non-inverting. No PCB change is needed when swapping between them.
What is the maximum recommended gate resistance for driving 100 nC GaN FETs?
For a 100 nC GaN device at 1 MHz, the datasheet recommends RG ≤ 2.2 Ω to maintain ≤10 ns rise/fall times. With 5 A peak drive and 0.55 Ω low-side on-resistance, 2EDN7523GXTMA1 achieves this without external buffers-verified in Infineon's AN2023-09 application note.
Does the 4.2 V UVLO apply to both channels independently?
Yes-the UVLO circuit monitors VDD globally but disables both OUTA and OUTB simultaneously upon threshold breach. However, ENA and ENB remain fully functional post-UVLO recovery, allowing controlled re-enablement without reset sequencing.
Can ENA and ENB be tied together for single-enable operation?
Yes-ENA and ENB may be shorted and driven by one controller signal. The internal logic ensures both outputs respond identically. This simplifies control in single-phase applications while preserving independent input flexibility for future upgrades.
2EDN7523GXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 8-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 20V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 5A, 5A
- Input Type:
- Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 5.3ns, 4.5ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-WSON-8-1
2EDN7523GXTMA1 FAQ
1.How can I place an order for 2EDN7523GXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDN7523GXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDN7523GXTMA1 reliable?
The price and inventory of 2EDN7523GXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDN7523GXTMA1 is usually 5 days.
3.What payment methods are accepted for 2EDN7523GXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDN7523GXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2EDN7523GXTMA1?
2EDN7523GXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDN7523GXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDN7523GXTMA1?
For technical support, including 2EDN7523GXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDN7523GXTMA1 requirements.
6.How does Aetrix verify that 2EDN7523GXTMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDN7523GXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDN7523GXTMA1 meets industry standards.
7.What is the process for return or replacement of 2EDN7523GXTMA1?
All 2EDN7523GXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDN7523GXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDN7523GXTMA1 part is unused and in its original packaging.
Return procedure for 2EDN7523GXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDN7523GXTMA1 Tags
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ZXGD3009E6TA
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